DRM FOCUS RING

PART DETAILS

1D10-302208-13
DRM FOCUS RING

OEM P/N: 

1D10-302208-13

ESCT P/N: 

ES7099-185

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

DRM focus ring (OEM P/N 1D10-302208-13), edge confinement focus ring for TEL 300 mm plasma etch systems

ESCT P/N ES7099-185, second-source new focus ring for Tokyo Electron dielectric etch chambers

The DRM Focus Ring is a circumferential edge consumable that surrounds the 300 mm wafer inside a Tokyo Electron (TEL) plasma etch chamber. Sitting on the periphery of the electrostatic chuck and immediately outboard of the wafer edge, the focus ring is the component that extends the plasma sheath beyond the silicon so that the electric field, ion trajectories and etch behaviour seen by the outermost die mirror those at the centre of the wafer. Its designation DRM points to its service in dielectric etch process modules, where the chemistry, RF coupling and edge geometry are all unusually sensitive to the condition of the ring.

In a TEL capacitively coupled etch module the focus ring is one of a small stack of edge parts (focus ring, insulator/coupling ring and the surrounding shield hardware) that together define the boundary condition of the discharge. Because it is directly in the path of energetic ions and reactive fluorine- or fluorocarbon-bearing species, the focus ring is a planned-replacement part rather than a lifetime component. As it erodes, the sheath profile at the wafer edge changes, and with it the etch rate, profile angle and critical dimension uniformity of the edge exclusion zone.

Maintaining a known, repeatable focus ring is therefore central to edge yield. ESCT Fab Support supplies the DRM Focus Ring (ESCT P/N ES7099-185) as a second-source new part manufactured to match the form, fit and function of the TEL original, giving fabs a qualified alternative for scheduled preventive maintenance and emergency chamber recovery.

Functional role of the focus ring in TEL plasma etch platforms

The focus ring performs several interrelated jobs at the wafer edge, each of which depends on its material properties, its precise dimensions and its electrical relationship to the chuck and the powered electrode. In a dielectric etch application these roles are tightly coupled to process result, so the ring is treated as a process-critical consumable, not merely a mechanical guard.

  • Extends the plasma sheath radially outward past the wafer edge so the field is uniform across the last rows of die rather than collapsing at the silicon boundary.
  • Shapes ion incidence angle at the edge, keeping etch profiles vertical and preventing tilting or bowing of high-aspect-ratio dielectric features near the perimeter.
  • Provides a sacrificial surface that absorbs ion bombardment and reactive attack, protecting the chuck periphery and surrounding hardware from erosion.
  • Forms part of the RF return and coupling path at the wafer edge, influencing local impedance and the symmetry of the discharge.
  • Sets the gas-flow and exhaust boundary at the wafer perimeter, contributing to uniform residence time of reactive species across the full diameter.
  • Defines a stable, repeatable edge geometry that the process recipe is qualified against, so chamber-to-chamber matching is preserved.

Material and process performance

Focus rings for dielectric etch are made from materials chosen to survive aggressive fluorocarbon plasmas while keeping particle generation and process contribution low. The combination of erosion resistance, electrical behaviour and dimensional stability determines both how long the ring lasts and how cleanly it performs across that life.

Erosion and chemical resistance

The ring is continuously exposed to energetic ions and reactive species, so its material must erode slowly and predictably without spalling or releasing particulate. Dimensional stability under thermal cycling, and resistance to fluorine and fluorocarbon attack, govern how far the surface recedes before the part falls out of its qualified window.

  • High resistance to ion sputtering and reactive etch in fluorocarbon-rich dielectric chemistries.
  • Low and predictable erosion rate, supporting a repeatable replacement interval based on accumulated RF or process hours.
  • Controlled purity to avoid introducing metallic or mobile-ion contamination at the wafer edge.
  • Stable surface finish that suppresses micro-arcing and particle shedding as the ring wears.

Electrical and thermal behaviour

Because the focus ring lies within the RF field, its dielectric or conductive character and its thermal coupling to the chuck both shape the edge discharge. The ring must maintain consistent impedance and heat transfer so that the sheath, edge temperature and etch rate remain uniform from wafer to wafer.

  • Consistent electrical properties that hold the edge impedance and sheath profile stable over the ring’s service life.
  • Predictable thermal contact with the chuck periphery for even edge temperature control.
  • Tight dimensional tolerances on inner diameter, step height and seating face for repeatable wafer-to-ring spacing.
  • Flatness and concentricity that preserve symmetry of the discharge around the full wafer circumference.

Impact on tool performance and yield

Few consumables have as direct a line to edge yield as the focus ring. As the part erodes or sits outside specification, the consequences appear first in the outermost die and then ripple into chamber matching and uptime.

  • Edge etch-rate drift, producing centre-to-edge non-uniformity and loss of perimeter die.
  • Profile tilting and critical-dimension shift at the wafer edge as the sheath geometry changes.
  • Particle excursions and defectivity when an eroded ring sheds or arcs.
  • Degraded chamber-to-chamber matching when rings are at different points in their wear life.
  • Unplanned downtime and requalification if the ring fails between scheduled PM windows.

Common wear and failure modes

Progressive erosion and recession

The dominant wear mechanism is steady recession of the upper surface and inner step from ion bombardment and reactive etch. As the ring thins, the sheath drops relative to the wafer edge, etch rate and profile shift, and edge uniformity slips out of specification, the cue for scheduled replacement.

Cracking, chipping and particle generation

Thermal cycling and mechanical handling can crack or chip the ring, especially once it has thinned with wear. Fractured edges and surface flaking become particle sources that contaminate the wafer and can require an unplanned chamber clean and requalification.

Arcing and localised damage

Non-uniform wear, residue build-up or poor seating can disturb the local RF field and trigger micro-arcing at the ring surface. Arc sites pit the material, accelerate erosion in that region and break the circumferential symmetry the process depends on.

Installation and replacement guidance

Focus ring changes are routine PM work, but because the part is process-critical the procedure should follow TEL guidance and be carried out under proper cleanroom discipline. The following sequence describes the typical steps; always defer to the official maintenance documentation for your specific platform.

  • Place the chamber in maintenance mode, vent to atmosphere and confirm RF and gas isolation per the tool lockout procedure.
  • Open the chamber and inspect the worn ring, surrounding edge hardware and chuck periphery for erosion, residue or damage.
  • Remove the spent focus ring with clean, particle-free gloves and tools, avoiding contact with the chuck surface.
  • Clean the seating area and verify the new DRM Focus Ring is free of packaging debris and handling marks.
  • Seat the new ring squarely on its locating features, confirming concentricity with the wafer pocket and full, even contact.
  • Close and pump the chamber, then run leak-check, season and conditioning recipes as required.
  • Qualify with monitor wafers for edge etch rate, uniformity and particle performance before returning to production, and log the change for life tracking.

Spare parts strategy for TEL etch consumables

Edge consumables like the focus ring are consumed on a predictable cadence, which makes them ideal candidates for managed spares. Stocking a qualified second-source part protects both PM scheduling and emergency recovery without over-reliance on a single supply channel.

  • Second-source new manufacture matched to the form, fit and function of the TEL original.
  • A qualified alternative to single-source OEM supply, supporting continuity of consumable availability.
  • Suited to scheduled preventive maintenance as well as urgent chamber-down recovery.
  • Referenced by both OEM P/N 1D10-302208-13 and ESCT P/N ES7099-185 for clean stores and traceability.
  • Indicative lead time of 4-5 weeks, allowing planned buffer stock to be built ahead of PM demand.
  • Backed by ESCT Fab Support’s focus on TEL 300 mm etch edge parts and consumable kits.

Frequently asked questions

What does this focus ring actually do in the chamber?

It surrounds the 300 mm wafer and extends the plasma sheath past the wafer edge, so the field, ion angle and etch behaviour at the outermost die match the centre of the wafer. This is what keeps edge etch rate, profile and critical dimensions uniform in dielectric etch.

Is this an original TEL OEM part?

No. This is a second-source new part, manufactured to match the form, fit and function of the TEL original referenced by OEM P/N 1D10-302208-13. It is not an original OEM-branded component, but is supplied as a qualified, compatible replacement.

How do I know when the ring needs replacing?

The ring is replaced on a wear schedule tracked by accumulated RF or process hours, and confirmed by inspection and edge process monitors. Drifting edge uniformity, profile shift at the perimeter or rising particle counts are the usual signs the ring has reached the end of its qualified life.

What is the lead time for this part?

The indicative lead time is 4-5 weeks. Because focus rings are consumed predictably, most fabs hold buffer stock so that PM and chamber-down events are covered without waiting on resupply.

Will swapping the ring affect chamber matching?

A correctly dimensioned, properly seated ring should restore the qualified edge geometry. After any focus ring change, run the normal conditioning and qualification recipes and verify edge etch rate, uniformity and particle performance with monitor wafers before returning to production.

How should the part be handled and stored?

Keep the ring in its protective packaging until use, handle only with clean, particle-free gloves and tools, and avoid contact with the working surfaces. Store in a clean, dry, controlled environment to protect the surface finish and dimensional integrity before installation.

Summary

The DRM Focus Ring (OEM P/N 1D10-302208-13, ESCT P/N ES7099-185) is a process-critical edge consumable for TEL 300 mm dielectric plasma etch chambers. By extending the plasma sheath beyond the wafer edge, shaping ion incidence and forming part of the edge RF path, it governs edge etch uniformity, profile control and particle performance. As an erosion-driven wear part it is replaced on a predictable schedule, making it an ideal managed spare. ESCT Fab Support offers it as a second-source new part matched to the OEM original, with an indicative 4-5 week lead time to support both preventive maintenance and rapid chamber recovery.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-302208-13. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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