ADDWORK,RING-FOCUS 360-315-5.5

PART DETAILS

2L02-250063-11
ADDWORK,RING-FOCUS 360-315-5.5

OEM P/N: 

2L02-250063-11

ESCT P/N: 

ES7099-228

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Focus ring (OEM P/N 2L02-250063-11), plasma edge-confinement consumable for TEL 300 mm etch systems

ESCT P/N ES7099-228 · Tokyo Electron 300 mm plasma etch focus ring

The focus ring described by the TEL part designation “ADDWORK, RING-FOCUS 360-315-5.5” is the annular consumable that surrounds the 300 mm wafer at the wafer-support pedestal of a Tokyo Electron plasma etch chamber. Its geometry, an outer profile in the region of 360 mm, an inner aperture sized to seat closely around the 300 mm wafer edge, and a working thickness on the order of 5.5 mm, positions it as the ring that physically frames the wafer perimeter and conditions the plasma sheath directly above the outermost die. It is one of the most replacement-intensive items in the chamber kit because it sits squarely in the ion flux and erodes throughout normal production.

In a TEL 300 mm capacitively coupled etch reactor, the focus ring is mounted concentrically on the lower electrode (the electrostatic chuck assembly), forming a continuous surface that extends the wafer plane outward. By extending the conductive and dielectric environment past the silicon edge, the ring pulls the plasma sheath boundary outboard of the wafer, so that the edge die experience an ion trajectory and etch field comparable to die at the wafer centre. Without this extension, the sheath would bend sharply at the wafer edge and the outermost rows of die would etch at the wrong angle and rate.

Because it is consumed by the very process it enables, the focus ring is a scheduled-replacement item rather than a permanent fixture. Its erosion rate, surface condition and dimensional drift translate directly into edge-of-wafer yield, making a reliable, dimensionally accurate supply of replacement rings a core part of any TEL etch fleet’s sustaining-engineering plan.

Functional role of the focus ring in TEL plasma etch platforms

The focus ring performs several coupled electrical and process functions simultaneously. It is not merely a spacer or a guard; it is an active part of the plasma boundary condition at the wafer edge and a contributor to the chamber’s particle and RF behaviour.

  • Extends the plasma sheath radially beyond the 300 mm wafer so the edge die see a near-vertical ion trajectory and uniform etch field.
  • Confines and shapes the plasma over the wafer perimeter, stabilising the transition from the active wafer surface to the surrounding hardware.
  • Maintains edge-to-centre etch-rate and critical-dimension uniformity by preventing sheath bending at the silicon edge.
  • Provides a sacrificial surface that absorbs ion bombardment, protecting the underlying electrostatic chuck and edge hardware from direct attack.
  • Participates in the RF return path and capacitive coupling at the wafer edge, helping set the local sheath voltage and impedance.
  • Helps control edge particle generation by presenting a clean, dimensionally correct surface rather than an eroded, redeposited one.

Material and process performance

Material selection and plasma compatibility

Focus rings for TEL 300 mm etch chambers are produced from carefully chosen plasma-resistant materials, most commonly high-purity silicon, silicon carbide or quartz depending on the process chemistry and the etch recipe the chamber is qualified for. The material is selected so that, as the ring erodes, the by-products are compatible with the process and do not introduce metallic or particulate contamination onto the wafer.

  • High-purity feedstock to avoid mobile-ion and metallic contamination at the wafer edge.
  • Controlled resistivity and dielectric properties to match the chamber’s edge coupling requirements.
  • Resistance to fluorine- and chlorine-based etch chemistries and to energetic ion bombardment.
  • Erosion characteristics matched to the process so wear is predictable and gradual rather than abrupt.

Dimensional accuracy and surface finish

The ring’s inner diameter, outer profile and thickness (the 360–315–5.5 family of dimensions) are tightly toleranced because the gap between the ring and the wafer edge, and the height of the ring relative to the wafer surface, directly set the local sheath geometry. Flatness and surface finish are equally important: a warped or rough ring perturbs the field and becomes a particle source.

  • Tight inner-aperture tolerance to maintain a consistent wafer-to-ring gap around the full perimeter.
  • Controlled thickness and flatness so the ring sits at the correct height relative to the wafer plane.
  • Specified surface finish to minimise initial particle shedding and stabilise erosion behaviour.
  • Concentric seating features that locate the ring repeatably on the chuck assembly.

Impact on tool performance and yield

Few consumables have as direct a line to edge-of-wafer yield as the focus ring. Because it governs the sheath over the outermost die, its condition is reflected almost immediately in edge metrology, and a worn ring is a frequent root cause of edge-zone excursions on TEL etch tools.

  • A correctly dimensioned ring preserves edge critical-dimension and etch-depth uniformity, protecting the yield of the outer die rows.
  • As the ring erodes and thins, the sheath shifts, edge etch profiles tilt and edge CD drifts out of specification.
  • Surface roughening and redeposition raise on-wafer particle counts, increasing defect-driven losses.
  • A stable ring shortens recipe re-qualification time after preventive maintenance and improves chamber-to-chamber matching.
  • Predictable ring wear supports accurate RF-hours-based replacement planning and reduces unscheduled downtime.

Common wear and failure modes

Erosion and thinning

The dominant wear mechanism is gradual erosion under continuous ion bombardment. As the ring loses material and its height drops below the wafer plane, the sheath geometry at the edge changes, edge etch rate and profile angle drift, and the ring eventually reaches an end-of-life thickness at which it must be replaced to recover edge uniformity.

Cracking and chipping

Thermal cycling, mechanical handling during preventive maintenance and the brittleness of ceramic or silicon materials can produce cracks, edge chips or fractures. A cracked ring is both a particle source and an electrical discontinuity, and any visible chipping is grounds for immediate replacement.

Surface roughening and redeposition

Over time the exposed surface roughens and accumulates etch by-product and polymer redeposition. This degrades the ring’s field-shaping behaviour, raises particle counts and can cause flaking, so rings are inspected for surface condition as well as dimensional wear at each PM.

Installation and replacement guidance

Focus-ring replacement is a routine preventive-maintenance activity, but it must be carried out cleanly and precisely because the ring’s seating and concentricity directly affect process results. The following sequence reflects good practice; always defer to your site’s qualified TEL maintenance procedure and ESD controls.

  • Place the chamber in its maintenance state, vent to atmosphere and confirm RF and gas energy sources are isolated and locked out.
  • Open the chamber and carefully lift out the worn focus ring, noting its orientation and recording erosion or damage for wear-trend tracking.
  • Inspect and clean the seating surface of the electrostatic chuck assembly, removing any debris or redeposition that would prevent flat, concentric seating.
  • Unpack the replacement ring with clean, powder-free gloves, inspect it for chips or cracks and verify the dimensions and orientation against the part it replaces.
  • Seat the new ring squarely and concentrically on the chuck, confirming it is fully home with no rocking, gaps or tilt around the perimeter.
  • Close the chamber, pump down, perform the required leak check and run the seasoning or conditioning recipe specified for the tool.
  • Re-qualify the chamber with the appropriate edge metrology and particle checks, and reset the ring’s RF-hours counter for the next replacement interval.

Spare parts strategy for TEL etch consumables

Focus rings are high-turnover consumables, so availability and dimensional consistency matter as much as unit cost. ESCT Fab Support supplies this ring as a qualified alternative to single-source OEM procurement, helping fabs hold ring inventory without exposure to long or unpredictable OEM lead times.

  • Verified to the form, fit and function of TEL OEM P/N 2L02-250063-11 under ESCT P/N ES7099-228.
  • Second-source supply that reduces dependence on a single OEM channel for a critical consumable.
  • Indicative lead time of 4–5 weeks to support planned PM scheduling and buffer-stock replenishment.
  • Dimensional and material consistency to keep edge-uniformity performance stable across replacements.
  • Support for multi-tool, multi-chamber fleets where ring consumption is continuous and predictable.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the 300 mm wafer on the lower electrode and extends the plasma sheath outward beyond the silicon edge, so the outermost die etch with the same ion trajectory and rate as the wafer centre. It also acts as a sacrificial, particle-controlling surface at the wafer perimeter.

Is this an original OEM part?

No. This ring is supplied as a new, second-source OEM-compatible part. It is verified to the form, fit and function of TEL OEM P/N 2L02-250063-11 but it is not an original Tokyo Electron OEM part and is not sold as one.

How do I know when the ring needs replacing?

Rings are typically replaced on an RF-hours schedule, but the practical indicators are drifting edge critical-dimension and etch-depth, rising edge particle counts, and visible erosion, thinning, chipping or surface roughening found during preventive-maintenance inspection.

What is it made from?

Focus rings for these chambers are made from high-purity plasma-resistant materials such as silicon, silicon carbide or quartz, selected so that erosion by-products are compatible with the etch chemistry and do not contaminate the wafer. The exact material is matched to the qualified process for the chamber.

Will a worn ring affect yield?

Yes. Because the ring sets the sheath over the edge die, a thinned, roughened or damaged ring causes edge profile tilt, edge CD drift and increased particles, all of which reduce yield in the outer rows of die. Timely replacement is the most effective way to protect edge-of-wafer performance.

What is the lead time for this part?

The indicative lead time is 4–5 weeks. Because focus rings are continuous-consumption items, we recommend holding buffer stock aligned to your preventive-maintenance cadence so replacements are always on the shelf when a chamber reaches its replacement interval.

Summary

The focus ring under TEL OEM P/N 2L02-250063-11 (ESCT P/N ES7099-228) is a critical edge-confinement consumable in Tokyo Electron 300 mm plasma etch chambers. Seated concentrically around the wafer on the lower electrode, it extends the plasma sheath outboard of the silicon edge to keep edge die etching uniformly, while acting as a sacrificial, particle-controlling surface in the ion flux. Its dimensions, material purity, flatness and surface condition all feed directly into edge-of-wafer yield, and because it erodes in normal use it is a scheduled-replacement item that benefits from reliable, dimensionally consistent second-source supply. ESCT Fab Support offers this ring as a form-fit-function-verified alternative with a defined lead time to keep TEL etch fleets running predictably.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L02-250063-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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