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The TEL focus ring identified by OEM part number 2L10-354003-11 is an annular edge-confinement consumable that sits immediately outboard of the 300 mm wafer inside a Tokyo Electron (TEL) plasma etch process chamber. The “T3.4” designation refers to a specific ring profile within the TEL focus ring family, and the “NO HOLE” qualifier distinguishes this variant from otherwise similar rings that carry pin, lift or gas through-holes, a solid, uninterrupted annulus with no machined penetrations through the ring body. This is a sacrificial part: it is consumed by the same plasma it shapes, and it is replaced on a planned cadence as part of routine chamber preventive maintenance.
In service the ring encircles the wafer on the electrostatic chuck (ESC), bridging the abrupt material and electrical discontinuity that would otherwise exist at the wafer’s edge. By extending the effective surface that the plasma sheath sees beyond the silicon, the focus ring pulls the etch front outward so that the dies sitting in the outermost few millimetres of the wafer are processed under conditions far closer to those experienced at the centre. Without this ring, the sheath would bend sharply at the wafer perimeter, tilting ion trajectories and degrading edge-die results.
Because edge yield is increasingly the limiting factor in high-volume 300 mm manufacturing, the condition of this seemingly simple ring has a direct and measurable effect on tool output. ESCT supplies the ES7099-202 as a second-source, new replacement built to match the form, fit and function of the original TEL component, giving fabs a qualified alternative for this consumable without compromising edge process control.
The focus ring performs several interlocking jobs at the wafer edge, all of which influence how the plasma behaves across the outermost annulus of the substrate. Its core functions in a TEL 300 mm etch chamber include the following:
As a plasma-exposed edge consumable, the value of this ring lies in how its material withstands ion bombardment while presenting electrically appropriate behaviour to the discharge. Performance is judged across two related dimensions: erosion resistance and electrical compatibility.
Focus rings of this class are typically produced from process-grade silicon, silicon carbide or comparable plasma-compatible materials selected to erode slowly and cleanly under fluorine- or chlorine-based chemistries. The ES7099-202 is manufactured to hold the as-new height, inner diameter, outer diameter and surface finish of the original profile, because it is precisely these dimensions that set the sheath geometry over the edge dies.
Beyond simply surviving the plasma, the ring participates in the RF circuit at the wafer edge. Its resistivity, dielectric character and contact to the underlying hardware all influence how the sheath terminates around the wafer, so a second-source ring must match the electrical class of the original, not merely its shape.
Because the focus ring sets the boundary conditions for every wafer’s outermost dies, its state translates almost directly into edge-zone process metrics and saleable die count. The practical consequences of ring condition include:
The focus ring is designed to wear out; the goal of maintenance is to replace it before that wear degrades the wafers running through the chamber. The dominant mechanisms are described below.
Continuous ion bombardment steadily thins the ring, lowering its top surface relative to the wafer plane. As the height drops, the plasma sheath bends progressively inward over the edge dies, shifting CD and tilting profiles until the chamber falls out of specification, the most common reason this part is scheduled for replacement.
Thermal cycling, mechanical handling during PM and the brittleness of the ring material can produce cracks or edge chips. Once fractured, the ring loses its uniform electrical and geometric boundary and becomes an immediate particle hazard, so any visible crack warrants removal regardless of remaining height.
As the surface erodes it can roughen, build up redeposited films or develop loosely bound material that flakes during processing or chamber venting. This raises on-wafer particle counts and contributes to defectivity excursions long before the ring is fully consumed.
Focus ring changes are a routine PM activity, but careless handling of a brittle, plasma-exposed consumable can cause particle excursions or damage to the chuck. The following sequence reflects good practice; always defer to the site-approved TEL maintenance procedure for the specific platform.
Focus rings are high-turnover consumables, so a dependable second-source supply protects both edge yield and the maintenance schedule. ESCT supports fabs running TEL 300 mm etch tools with a qualified alternative for this ring:
“T3.4” identifies a specific focus ring profile within the TEL ring family, and “NO HOLE” means this variant is a solid annulus with no pin, lift or gas through-holes machined through the ring body. The distinction matters because the presence or absence of holes changes both the geometry and the electrical boundary the ring presents at the wafer edge, so the no-hole version must not be swapped for a drilled variant.
No. The ES7099-202 is supplied as a second-source, new part manufactured to match the form, fit and function of TEL OEM P/N 2L10-354003-11. It is not an original Tokyo Electron OEM component, and TEL part numbers are quoted solely for cross-reference and identification.
Replacement interval depends on the etch process, RF power, chemistry and wafer throughput, so it is best driven by accumulated RF hours or wafer count alongside edge-CD and particle monitor data rather than a fixed calendar. Most fabs track ring height loss and replace the ring once edge process drift approaches the control limit.
As the ring erodes, the plasma sheath bends inward over the wafer edge, tilting ion trajectories and shifting critical dimension on the outermost dies. The result is degraded edge-die yield, profile tilt and, in late-stage wear, rising particle counts, which is why the ring is replaced on a planned cadence rather than run to destruction.
Yes. A clean, intact ring is benign, but a cracked, chipped or heavily roughened ring can shed material and become a defect source on the wafer. Using a part held to the correct dimensions and surface finish, and handling it carefully during installation, keeps the ring’s contribution to chamber defectivity to a minimum.
The typical lead time for this ring is 4-5 weeks. Because focus rings are consumed quickly in production, we recommend forecasting them against your PM schedule and holding appropriate buffer stock to avoid tool downtime between deliveries.
The TEL focus ring 2L10-354003-11, offered by ESCT as second-source new part ES7099-202, is a solid no-hole edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. It extends and flattens the plasma sheath over the wafer’s outermost dies, holds ion trajectories vertical at the edge and presents a continuous electrical boundary around the wafer, all of which directly govern edge-die CD, profile and yield. As a sacrificial part it erodes with use and must be replaced on a controlled cadence, with attention to dimensional accuracy, material class and careful handling. Supplied to match the form, fit and function of the original at a typical 4-5 week lead time, the ES7099-202 gives fabs a qualified alternative for protecting edge process control.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-354003-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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