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The Silicon Focus Ring (notch) is a precision-machined annular consumable that surrounds the 300 mm wafer at the edge of a Tokyo Electron (TEL) plasma etch electrostatic chuck. Carrying TEL OEM part number 1D10-302209-14 and supplied by ESCT Fab Support under part number ES7099-142, it is one of the most influential sacrificial components in the chamber. Its job is to extend the active process region radially outward beyond the wafer perimeter, so that the plasma sheath, ion flux and etch chemistry seen by the outermost dies are as close as possible to those experienced at the centre of the wafer.
The notch feature referenced in the part name is a machined keying detail on the ring, a locating notch or flat that aligns the ring to a corresponding pin or boss on the lower electrode assembly. This guarantees a single, repeatable rotational orientation each time the ring is fitted, which matters because the ring’s concentricity with the wafer and its azimuthal alignment directly affect edge etch symmetry. A ring seated even a fraction of a degree out of position can introduce a systematic skew in critical dimension (CD) and etch depth around the wafer edge.
Because the ring is manufactured from high-purity silicon rather than a dielectric such as quartz or a hard ceramic, it participates electrically and chemically in the process. Silicon is consumed in the same fluorine- and chlorine-based etch environments that attack the wafer, and it shares the wafer’s RF and thermal characteristics closely. This makes it an excellent edge extension of the silicon device wafer, but it also means the ring erodes over time and must be tracked as a scheduled consumable.
In a TEL 300 mm etch chamber the focus ring sits immediately outboard of the wafer on the lower electrode, bridging the gap between the wafer edge and the surrounding chamber hardware. Its silicon construction and notched alignment allow it to perform several interrelated functions simultaneously:
The ring is machined from high-resistivity, high-purity silicon so that it behaves chemically like the wafer it surrounds. In fluorine- and chlorine-bearing plasmas the silicon is etched at a predictable rate, which means the ring thins from the top surface and its inner edge gradually recedes. Material purity is critical: trace metallic contamination in the silicon can be liberated under ion bombardment and redeposited on the wafer edge, so low-metals stock and clean machining are prerequisites for acceptable defectivity.
Flatness, inner-diameter tolerance and surface finish all influence how cleanly the sheath transitions across the wafer edge. The ring’s resistivity and dielectric environment set the local capacitive coupling, so the as-supplied silicon grade must match the original specification to preserve edge sheath voltage and ion energy. The notch geometry must also be held to tolerance so the ring registers correctly without rocking or lateral play on the electrode.
Few consumables affect edge-of-wafer yield as directly as the focus ring. As it erodes, the height step between the ring surface and the wafer changes, the sheath geometry shifts and the etch behaviour at the wafer edge drifts. A worn or incorrectly specified ring produces effects that show up immediately in process control data:
The dominant wear mode is steady plasma erosion. Continuous ion bombardment thins the ring and recedes its inner edge, increasing the wafer-to-ring height step. Once the step exceeds the process window, edge uniformity degrades and the ring reaches end of life even though it is still mechanically intact.
Silicon is brittle. Repeated thermal cycling, localised hot spots, or mishandling during installation can initiate cracks or chip the thin inner edge. A cracked ring sheds particles onto the wafer edge and can fracture further under continued cycling, making it an immediate replacement item.
If the notch is not engaged correctly, the ring can sit eccentric, tilted or rotated. This produces asymmetric edge etch results, localised arcing and uneven wear, and may leave a gap that allows plasma to attack the electrode beneath. The notch has to engage correctly on every install.
Focus ring replacement is a routine preventive-maintenance task on TEL etch tools, but it must be carried out cleanly to protect both the ring and the electrode. The following sequence reflects general good practice; always follow your site’s documented TEL maintenance procedure and safety controls.
Because the focus ring is a frequently replaced consumable that gates edge yield, fabs benefit from holding qualified stock rather than waiting on long single-source lead times. ESCT Fab Support supplies ES7099-142 as a second-source alternative to the TEL OEM part, giving process and procurement teams a reliable way to keep tools running:
It surrounds the 300 mm wafer at the edge of the lower electrode and extends the plasma process region past the wafer perimeter. This straightens the sheath and corrects ion incidence at the wafer edge, so the outermost dies etch with the same profile and critical dimension as the wafer centre. The notch means it always seats in one fixed, concentric orientation.
No. ES7099-142 is supplied as a new, second-source part that is OEM-compatible with TEL P/N 1D10-302209-14. It is verified to match the original in form, fit and function, but it is not an original OEM-branded component and is not sold as one.
Silicon is chosen so the ring behaves chemically and electrically like the wafer it surrounds. It shares the wafer’s etch chemistry, RF coupling and thermal response, which keeps the edge environment uniform. The trade-off is that, like the wafer, the silicon is consumed by the plasma and must be replaced on a schedule.
The usual indicators are drift in edge critical dimension and centre-to-edge uniformity, tilted edge profiles, rising particle counts and a measurable reduction in ring height. Most fabs lift the ring at a fixed RF-hour or wafer-count interval and replace it once erosion approaches the process limit, before yield is affected.
Very important. The notch keys the ring to a locating feature on the electrode so it sits concentric and in a single repeatable orientation. If the notch is not engaged, the ring can sit eccentric, tilted or rotated, producing asymmetric edge etch, localised arcing and uneven wear. Always confirm the notch is fully seated before pumping down.
The typical lead time is 4-5 weeks. Because the focus ring is a high-turn consumable, we recommend planning replenishment against your PM schedule and holding buffer stock so that a tool is never held up waiting for an edge-confinement part.
The Silicon Focus Ring (notch), TEL OEM P/N 1D10-302209-14 and ESCT P/N ES7099-142, is a sacrificial high-purity silicon consumable that governs edge etch uniformity in TEL 300 mm plasma etch chambers. By extending the plasma sheath beyond the wafer, matching the wafer’s chemistry and RF coupling, and keying to a fixed orientation via its notch, it protects edge-die yield and shields the electrode beneath. As an eroding consumable it requires scheduled inspection and replacement, and ESCT Fab Support offers it as a new, second-source alternative with a 4-5 week lead time to keep your etch tools productive.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-302209-14. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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