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The Silicon Focus Ring (notch), TEL OEM part number 1D10-302209-14, is a precision-machined silicon consumable that surrounds the wafer at the perimeter of a Tokyo Electron 300 mm plasma etch chamber. Sitting concentrically around the electrostatic chuck and immediately outboard of the wafer edge, the focus ring extends the conductive plasma boundary beyond the silicon disc itself so that the sheath and ion flux remain symmetrical right out to the wafer’s outermost die. The “notch” feature in this variant is a keyed indexing or alignment detail that fixes the ring’s rotational orientation against the cathode assembly, giving repeatable seating and consistent RF and gas geometry from one preventive-maintenance cycle to the next.
Because the focus ring is fabricated from high-purity silicon, the same base material as the wafer being processed, it presents a chemically matched surface to the plasma. This matters because any material that erodes from the ring under ion bombardment contributes the same elemental species as the wafer, rather than introducing foreign metals or oxides that would register as killer defects. The ring is therefore both an electrical-field shaping component and a sacrificial particle-control element, and it is one of the most frequently replaced consumables in any high-volume TEL etch line.
As a wear part exposed continuously to energetic ions and reactive fluorine- or chlorine-based chemistries, the silicon focus ring erodes progressively over its service life. Maintaining a qualified, dimensionally accurate replacement on the shelf keeps edge-die yield stable and helps avoiding unplanned chamber downtime when the ring reaches end of life.
The focus ring performs several interlocking functions that together determine how cleanly and uniformly the wafer edge is etched. It is far more than a passive spacer; it actively shapes the plasma sheath and conducts RF current at the most demanding region of the wafer.
The ring is machined from high-resistivity, high-purity silicon, frequently of single-crystal or polycrystalline grade depending on the recipe. Purity is decisive because erosion products re-enter the plasma; trace metals would migrate to the wafer surface and cause yield-limiting contamination. The bulk resistivity of the silicon also tunes how the ring couples RF energy and how the local sheath voltage develops at the edge.
Inner diameter, height, flatness, taper and surface finish are all held to tight tolerances, because the geometric relationship between ring top and wafer top governs sheath shape at the edge. The notch must be located and dimensioned accurately so the ring indexes without play, and the seating face must be flat for good thermal and electrical contact with the cathode.
Because the focus ring controls the most sensitive region of the wafer, its condition feeds directly into process metrics and device yield. A worn or out-of-spec ring shifts edge behaviour before any other symptom appears, which is why it is closely tracked in fab maintenance plans.
The dominant wear mechanism is steady silicon erosion under ion bombardment, which thins the ring and lowers its top surface relative to the wafer. As the step changes, the edge sheath bends, ion trajectories tilt and edge critical dimensions drift. Beyond a defined erosion limit the ring can no longer hold edge uniformity and must be replaced.
Silicon is brittle, so thermal cycling, mechanical mishandling during PM, or stress concentrated around the notch can initiate cracks or edge chips. Fractured fragments are a direct particle source and can also disturb local RF behaviour, making any cracked ring an immediate candidate for removal.
Over time the exposed surface roughens and may accumulate polymer or by-product films from the etch chemistry. Roughening increases the rate of micro-particle generation, while flaking deposits add defects, both of which degrade particle counts and edge defectivity well before the ring is fully eroded.
Focus-ring replacement is a routine but precision-critical PM activity. Cleanliness, correct orientation and careful handling of the brittle silicon are paramount. The following sequence reflects general best practice; always defer to your facility’s tool-specific procedure and safety requirements.
Focus rings are high-frequency consumables, so a reliable supply chain has a direct effect on fab availability and cost per wafer. ESCT Fab Support helps fabs maintain that supply with verified, compatible silicon rings and dependable lead times.
The notch is a keyed indexing feature that fixes the rotational orientation of the ring relative to the cathode assembly. It seats the ring in the same angular position every time, so gas flow geometry, RF coupling and any asymmetric chamber features remain repeatable across PM cycles.
No. This focus ring is supplied as a second-source new component that is compatible with TEL OEM part number 1D10-302209-14. It is verified to match the original in form, fit and function, but it is not an original TEL-branded part and is offered as a cost-effective alternative.
Silicon is chosen because it is chemically identical to the wafer. Any material that erodes from the ring under ion bombardment then contributes the same elemental species as the wafer rather than foreign metals or oxides, which keeps edge defectivity and contamination low. Silicon also provides controllable resistivity for tuning edge RF behaviour.
The most common indicators are drift in edge critical dimensions or edge etch rate, rising particle counts, and measured height loss approaching the erosion limit defined for the recipe. Many fabs replace the ring on a wafer-count or RF-hour basis derived from these trends rather than waiting for an excursion.
The typical lead time is 4-5 weeks. Because focus rings are consumed continuously in high-volume etch operations, we recommend maintaining buffer stock aligned to your PM interval so that planned ring changes are never delayed by procurement.
Silicon is brittle, so the ring should be handled with clean gloves or appropriate tooling, kept free of skin oils and residue, and never forced or levered against the notch. Seat it flat and concentric, confirm there is no rock or gap, and verify the notch alignment before pumping down.
The notched Silicon Focus Ring (TEL OEM P/N 1D10-302209-14, ESCT P/N ES7099-029) is a critical edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By shaping the plasma sheath, conducting RF at the wafer periphery and presenting a chemically matched silicon surface, it protects edge-die yield, sidewall profile and particle performance. Its notch guarantees repeatable orientation, while its high-purity construction keeps contamination low. As a steadily eroding wear part, it benefits from disciplined replacement and reliable spares supply, which ESCT Fab Support provides as a verified, second-source new alternative with a typical 4-5 week lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-302209-14. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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