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The Outer Silicon Cathode Electrode Ring (CEL, Outer) is a polysilicon consumable ring fitted to the periphery of the lower cathode electrode assembly in Tokyo Electron (TEL) 300 mm plasma etch process chambers. In TEL nomenclature, “CEL” denotes the silicon electrode element that forms part of the powered cathode stack beneath the wafer; the “OUTER” designation identifies this specific ring as the outermost silicon member, sitting concentrically around the wafer edge and the inner electrode hardware. The “(POLY)” suffix confirms that this part is manufactured from polycrystalline silicon rather than single-crystal silicon, and “SS-V2” identifies the chamber or process-kit configuration variant for which it is dimensioned.
Positioned at the plasma-facing edge of the cathode, this ring shares the RF environment with the wafer and is directly exposed to ion bombardment, reactive radicals and the intense thermal load at the chamber edge. Its job is to extend the silicon electrical and chemical environment of the cathode out beyond the wafer perimeter, so that the sheath, the plasma density and the etch chemistry seen by the outermost die remain as close as possible to those seen at the wafer centre. As a silicon part in the RF return path, it is both an electrode surface and a consumable that is deliberately sacrificed to protect more expensive cathode hardware.
Because it governs edge uniformity, plasma confinement and edge particle performance simultaneously, the outer CEL ring is one of the consumables that most directly determines edge-of-wafer yield. ESCT Fab Support supplies ES7099-123 as a precision second-source polysilicon ring built to the form, fit and function of OEM P/N 2L10-355078-11.
Within the cathode stack, the outer silicon electrode ring performs several roles at once, blending electrical, chemical and mechanical functions in a single sacrificial component that frames the wafer at the plasma boundary.
Polycrystalline silicon is chosen for this ring because it presents the same elemental surface chemistry as the wafer and as silicon-based cathode electrodes, minimising the introduction of foreign species into the plasma. The material is supplied to a controlled resistivity and purity so it behaves predictably as an electrode in the RF circuit.
In service the ring is continuously sputtered and chemically etched by fluorine-, chlorine- or bromine-bearing plasmas. Its dimensions and surface condition directly set the edge etch rate, the sheath profile and the deposition/erosion balance seen by the outer wafer ring.
Because it sits at the boundary between wafer and chamber, the condition of the outer CEL ring is read directly in edge-die results. A worn, cracked or out-of-tolerance ring shows up as measurable process and yield loss long before it causes a hard fault.
The primary wear mode is gradual sputter and chemical erosion of the top and inner surfaces. As the ring thins, the sheath profile changes and the silicon area available for the RF return and for radical buffering shrinks, pushing edge process parameters out of specification.
Silicon is brittle, and repeated rapid heating and cooling at the chamber edge can drive thermal-fatigue cracking. Cracks can also be initiated by mishandling or by uneven clamping; a fractured ring is an immediate particle and arcing hazard and must be replaced.
Over many RF-hours the exposed face roughens and can accumulate polymer or redeposited film. This degrades particle performance, alters local chemistry and can lead to flaking, marking the practical end of the ring’s serviceable life even before it is fully eroded.
The outer CEL ring is a scheduled preventive-maintenance consumable. Always follow the relevant TEL maintenance procedure and your fab’s safety protocols; the steps below summarise good practice for handling a brittle silicon electrode part.
Silicon edge consumables wear on a predictable RF-hour cadence, which makes them ideal candidates for a managed second-source strategy. ESCT Fab Support helps fabs hold qualified stock of parts like ES7099-123 so a worn ring never becomes the constraint on a PM.
It is the outermost silicon electrode ring on the TEL cathode, framing the wafer at the plasma edge. It extends the silicon electrode surface beyond the wafer, shapes the sheath and plasma density for edge uniformity, participates in the RF return path and acts as a sacrificial silicon source that protects the cathode hardware beneath it.
No. ES7099-123 is a second-source NEW part, supplied as a new OEM-compatible polysilicon ring manufactured to match OEM P/N 2L10-355078-11 in form, fit and function. It is not an original TEL OEM part and is not sold as one.
Polycrystalline silicon offers the same elemental surface chemistry needed to match wafer-edge process conditions while being well suited to a sacrificial, erosion-driven consumable role. The “(POLY)” designation in the part name confirms this material choice for the SS-V2 configuration.
Replacement is normally driven by accumulated RF-hours per your PM plan, supported by indicators such as edge etch-rate or CD drift, rising particle counts, RF tuning instability, and visible thinning, roughening or cracking during chamber inspection. Any crack means immediate replacement.
Yes. The ring is one of the main determinants of edge-of-wafer etch uniformity and edge particle performance. A ring held to correct material, purity and dimensional specifications protects outer-die yield; a worn or non-conforming ring degrades both.
The nominal lead time is 4–5 weeks. The part is referenced as ESCT P/N ES7099-123 against TEL OEM P/N 2L10-355078-11, so it can be ordered and stocked under either number.
The Outer Silicon Cathode Electrode Ring (ES7099-123, OEM P/N 2L10-355078-11) is a polysilicon edge consumable for the cathode assembly of TEL 300 mm plasma etch chambers in the SS-V2 configuration. By extending the silicon electrode beyond the wafer, shaping the edge sheath, carrying RF return current and acting as a sacrificial surface, it governs edge etch uniformity, plasma confinement and particle performance. Wearing predictably through erosion, cracking and surface roughening, it is a scheduled PM item where a qualified, well-stocked second-source supply keeps tools productive and edge yield protected.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-355078-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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