2L10-355763-11-07
OUTER CEL, 4x

Outer CEL ring (OEM P/N 2L10-355763-11-07), outer coupling-electrode silicon ring for GES Tokyo Electron 300 mm etch systems

GES outer CEL, 4x, second-source new silicon coupling-electrode ring for TEL 300 mm plasma etch process chambers

The Outer CEL Ring is the outer annular member of the coupling-electrode (CEL) assembly that forms part of the upper electrode stack in Tokyo Electron 300 mm capacitively coupled plasma etch chambers. “CEL” denotes the coupling-electrode plate, the silicon-based electrode element that sits directly opposite the wafer and is responsible for shaping the RF field and ion flux above the substrate. In a segmented electrode design the active surface is divided into an inner electrode region and a surrounding outer ring; this part is the outer ring of that arrangement, the “Outer CEL”, supplied by GES under OEM part number 2L10-355763-11-07.

Positioned at the periphery of the upper electrode and concentric with the wafer below, the outer CEL ring bridges the boundary between the powered or grounded electrode face and the chamber liner hardware. Because it lives in the most plasma-exposed zone of the chamber roof, it is treated as a scheduled consumable rather than a permanent fixture: it erodes predictably under ion bombardment and is replaced on a wet-clean or preventive-maintenance cadence. The “4x” descriptor in the raw part name reflects the kitted or multi-piece configuration in which these rings are commonly handled.

Although physically a simple ring, the outer CEL has an outsized influence on edge etch behaviour. It completes the electrode surface seen by the plasma near the wafer edge, helps define the radial profile of the RF field and contributes to plasma confinement at the chamber periphery. A worn, cracked or out-of-specification outer CEL ring shows up immediately as edge non-uniformity, particle excursions and process drift, which is why fab teams keep it in stock and treat its condition as a process-critical variable.

Functional role of the outer CEL ring in GES Tokyo Electron etch platforms

Within the upper-electrode assembly the outer CEL ring performs several interlocking jobs that together govern how the plasma terminates and how uniformly the wafer edge etches:

• Completes the outer portion of the coupling-electrode surface that faces the wafer, extending the active electrode area beyond the inner electrode region to the wafer-edge radius and beyond.
• Shapes the radial RF field at the chamber periphery, helping flatten the etch-rate profile from wafer centre to extreme edge.
• Supports plasma confinement at the edge of the discharge, working with the focus and edge rings below to keep the bulk plasma centred over the wafer.
• Provides a controlled, sacrificial silicon surface that erodes in place of more costly fixed electrode hardware, protecting the chamber roof structure.
• Contributes to fluorine and radical balance in fluorine-based etch chemistries through silicon consumption, influencing selectivity and chamber wall conditions.
• Maintains a defined gap and concentricity relationship with the inner electrode and surrounding liner so the electrical and gas-flow geometry stays repeatable run to run.

Material and process performance

As a coupling-electrode ring, this part is engineered around the electrical and chemical behaviour of high-purity silicon in an aggressive plasma environment, where both bulk material grade and surface condition determine its useful life.

Silicon grade and purity

CEL electrode rings are typically machined from high-resistivity, high-purity silicon so that they couple RF energy cleanly and contribute minimal metallic contamination as they erode. Purity and resistivity control are central to keeping defectivity low and etch chemistry stable as the ring is consumed.

• High-purity silicon minimises metallic ion contamination of the wafer as the surface is sputtered.
• Controlled bulk resistivity supports consistent RF coupling across the electrode face.
• Silicon participates in fluorine scavenging, helping stabilise radical concentrations in the discharge.

Surface finish and dimensional control

The flatness, edge profile and surface finish of the ring set how evenly it erodes and how reliably it seats against adjacent hardware. Tight dimensional tolerances preserve the electrode gap and concentricity that the process recipe was tuned against.

• Precision flatness and parallelism maintain a uniform gap to the wafer plane.
• Controlled surface finish promotes even, predictable erosion rather than localised pitting.
• Accurate inner and outer diameters preserve concentricity with the inner electrode and liner.

Impact on tool performance and yield

Because the outer CEL ring sits in the field-shaping and plasma-confinement region directly above the wafer edge, its condition translates almost directly into edge yield and chamber-matching performance:

• Edge-to-edge etch uniformity, and therefore usable die count at the wafer perimeter, depends on a correctly profiled ring.
• Particle performance degrades as the silicon surface flakes or cracks, driving defectivity and rework.
• Critical-dimension and profile control at the edge drift as the electrode geometry changes with wear.
• Chamber-to-chamber matching suffers when rings of inconsistent grade or dimension are mixed across a fleet.
• Preventive-maintenance intervals and consumable cost-per-wafer are set largely by the ring’s erosion life.

Common wear and failure modes

Erosion and thinning

Continuous ion bombardment sputters the silicon surface, gradually thinning the ring and rounding its edges. As material is lost the electrode gap and field profile change, shifting edge etch rate and eventually pushing uniformity outside the process window even before any visible defect appears.

Cracking and chipping

Silicon is brittle, so thermal cycling, mechanical clamping stress or rough handling can initiate cracks or edge chips. These not only alter the electrical surface locally but also become particle sources, releasing silicon debris onto the wafer and contaminating the chamber.

Surface roughening and deposition build-up

Polymer and by-product films can accumulate on the ring between cleans, while micro-masking can roughen the surface. Both change secondary-electron and erosion behaviour, encourage flaking and contribute to arcing risk and process drift if the ring is run past its intended life.

Installation and replacement guidance

The outer CEL ring is replaced during a scheduled wet clean or preventive-maintenance window. Follow the tool owner’s documented procedure; the sequence below outlines good general practice for a silicon coupling-electrode ring:

• Confirm the chamber is vented to atmosphere, RF is locked out and the upper electrode assembly has cooled before any access.
• Open the chamber per the OEM lid or top-plate procedure and document the orientation and position of the existing electrode rings before removal.
• Remove the worn outer CEL ring carefully, supporting the brittle silicon to avoid generating chips, and inspect adjacent inner-electrode, liner and gasket surfaces.
• Wearing clean, powder-free gloves, unpack the new ring and verify it is free of cracks, chips and handling marks before fitting.
• Seat the new outer CEL ring into its register, confirming correct concentricity with the inner electrode and an even gap with no rocking or interference.
• Reassemble the electrode stack to the OEM torque and sequence specifications, then pump down, leak-check and perform any required RF and chamber conditioning.
• Run particle, etch-rate and uniformity qualification wafers to confirm the chamber is back within its process and matching specification before releasing it to production.

Spare parts strategy for GES Tokyo Electron etch consumables

Coupling-electrode rings are scheduled consumables, so availability and consistency matter as much as unit price. ESCT Fab Support supplies the outer CEL ring as part of a structured spares programme built for high-volume etch fleets:

• Second-source new parts verified to the form, fit and function of OEM P/N 2L10-355763-11-07.
• High-purity silicon construction selected for low contamination and stable RF coupling.
• Indicative lead time of 4–5 weeks, supporting planned preventive-maintenance scheduling and buffer-stock management.
• Consistent grade and dimensional control to help preserve chamber-to-chamber matching across a fleet.
• A cost-competitive alternative to OEM-only sourcing that helps reduce consumable cost-per-wafer without compromising qualification.

Frequently asked questions

What exactly is the outer CEL ring?

It is the outer annular silicon ring of the coupling-electrode (CEL) assembly in a Tokyo Electron 300 mm plasma etch chamber. It forms the peripheral part of the upper-electrode surface facing the wafer and helps shape the RF field and confine the plasma at the wafer edge.

Is this an original OEM part?

No. This is a second-source new part supplied as an OEM-compatible component, verified to the form, fit and function of OEM P/N 2L10-355763-11-07. It is not an original OEM part and is not sold as one.

What material is the ring made from?

Coupling-electrode rings of this type are made from high-purity, high-resistivity silicon, chosen for clean RF coupling, predictable erosion and low contamination as the surface is consumed in the plasma.

How often does the outer CEL ring need replacing?

As a sacrificial consumable, replacement frequency depends on the etch chemistry, RF power and duty cycle of your process. It is typically changed on a preventive-maintenance or wet-clean cadence once erosion, particle data or uniformity trends indicate it has reached end of life.

What does the “4x” in the part name mean?

The “4x” reflects the kitted or multi-piece way these rings are commonly catalogued and handled. Confirm the exact quantity and configuration you require against your tool documentation when ordering.

What is the lead time for this part?

The indicative lead time is 4–5 weeks. We recommend factoring this into your preventive-maintenance planning and maintaining appropriate buffer stock for a process-critical consumable of this kind.

Summary

The GES Outer CEL Ring (OEM P/N 2L10-355763-11-07) is the outer silicon coupling-electrode ring of the upper-electrode assembly in Tokyo Electron 300 mm plasma etch chambers. It completes the peripheral electrode surface above the wafer edge, shapes the radial RF field, supports edge plasma confinement and acts as a sacrificial silicon consumable. Made from high-purity silicon and held to tight dimensional tolerances, it directly affects edge uniformity, particle performance and chamber matching, and it wears through erosion, cracking and surface roughening. Supplied by ESCT Fab Support as a second-source new, OEM-compatible part with a 4–5 week lead time, it offers a qualified, cost-effective route to keeping etch chambers within their process window.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of GES part number 2L10-355763-11-07. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with GES, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

Related parts

• 2L10-355078-11, CEL, OUTER SS-V2
• 2L10-355755-11, CEL, OUTER SS-L V2
• 2L10-355763-11, CEL, OUTER SS-LP V2
• 2L10-355763-11, CEL, OUTER SS-LP V2
• 2L10-355078-11, CEL, OUTER SS-V2(POLY)
• 2L10-355755-11, CEL, OUTER SS-L V2(POLY)
• 2L10-250803-11, CEL, OUTER 10-40F(PH-MG)V2
• 2L10-250803-11, CEL, OUTER 10-40F(PH-MG)V2