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The Outer Silicon Electrode Ring (designated “CEL, OUTER” in TEL nomenclature, SS-V2 variant) is a high-purity silicon consumable that forms the annular outer portion of the electrode (cathode) assembly in Tokyo Electron 300 mm plasma etch chambers. In TEL etch architecture, the “CEL” family describes the silicon electrode elements that face the plasma, and the outer member of this set surrounds the central electrode to complete a continuous silicon plasma-facing surface above or around the wafer. This ring is exposed directly to energetic plasma, reactive fluorine- and oxygen-bearing species and ion bombardment throughout every process cycle.
Because it sits at the periphery of the electrode, the outer ring exerts a disproportionate influence on the conditions seen by the wafer edge. It helps define the boundary of the active electrode area, conditions the radial electric field profile, and provides a sacrificial silicon surface that participates in the plasma chemistry. As the part is consumed by sputtering and chemical attack, its geometry and surface state drift, which is precisely why it is treated as a scheduled-replacement consumable rather than a permanent structural component.
For fabs running TEL dielectric or conductor etch processes, maintaining a reliable supply of the outer silicon electrode ring holds edge etch performance, defect budgets and chamber-matching targets across a fleet. ESCT Fab Support offers ES7099-122 as a second-source, brand-new equivalent to OEM P/N 2L10-355078-11, verified to form, fit and function.
The outer silicon electrode ring works in concert with the central electrode and the surrounding focus/edge ring stack to shape the plasma sheath and the chemistry directly above and around the wafer. Its functions include:
As a plasma-facing silicon consumable, the value of this ring lies almost entirely in its material purity, geometric precision and surface finish. These attributes determine both its etch performance and its particle behaviour over a campaign.
The ring is manufactured from high-purity silicon selected for controlled resistivity and low trace-metal content. High purity means the silicon contributes only intended silicon-bearing species to the discharge and does not introduce metallic contamination onto the wafer. The material is chosen to erode in a predictable, uniform manner under fluorine- and fluorocarbon-based chemistries, so that consumption translates to a slow, even change in geometry rather than localised pitting.
Flatness, inner and outer diameter tolerance, thickness and concentricity all affect how the ring seats against the electrode and how the plasma sheath behaves at the edge. A controlled surface finish minimises micro-roughness sites that would otherwise shed particles or erode unevenly. The SS-V2 ring is produced to tight tolerances so that it drops into the electrode assembly without shimming or rework and reproduces the boundary conditions of the part it replaces.
Because it governs conditions at the wafer edge, a degraded or out-of-spec outer electrode ring shows up quickly in production metrics. A correctly specified ring helps the chamber hold its process window; a worn or mismatched one erodes margin in several ways:
As a plasma-facing consumable, the outer silicon electrode ring is expected to wear; the goal of a maintenance strategy is to retire it before wear becomes a yield or contamination problem. The most common modes are described below.
Continuous ion bombardment and chemical attack steadily sputter silicon from the plasma-facing surface, thinning the ring and rounding its edges. As thickness falls, the local sheath and field change, edge etch behaviour drifts and the part approaches the point where it must be replaced to protect process integrity.
Non-uniform erosion, redeposition of process by-products and micro-masking produce a roughened surface over time. This roughness becomes a source of particles that can land on the wafer edge, raising defectivity and triggering more frequent chamber cleans.
Silicon is brittle, so thermal cycling, mechanical stress during handling or installation, and an uneven seat can initiate micro-cracks or chips. A cracked ring can shed large particles, lose its sealing or seating integrity and, in the worst case, fail catastrophically during a run.
Replacement should follow TEL approved maintenance procedures for the specific chamber and be carried out by trained personnel under appropriate cleanroom and ESD discipline. The following sequence outlines good practice:
Silicon electrode consumables are replaced on a regular cadence, so predictable supply and qualified equivalence matter as much as the part itself. ESCT Fab Support helps fabs control cost and protect uptime with ES7099-122:
It forms the outer, annular portion of the silicon electrode (cathode) assembly in a TEL plasma etch chamber. It completes the plasma-facing silicon surface at the periphery, conditions the radial field and sheath, and acts as a sacrificial silicon source in the plasma chemistry, all of which influence etch behaviour at the wafer edge.
No. ES7099-122 is supplied as a second-source, brand-new part that is OEM-compatible with TEL P/N 2L10-355078-11 and verified to form, fit and function. It is not an original OEM-branded component and is not supplied by Tokyo Electron.
Replacement interval depends on your process chemistry, power, duty cycle and particle limits. As a plasma-facing silicon consumable it is replaced on a scheduled PM basis; most fabs track accumulated RF hours or wafer count and retire the ring before erosion or roughening affects edge uniformity or defectivity.
Typical indicators include drifting edge etch rate or critical dimensions, degraded within-wafer uniformity, rising particle counts or edge defects, and visible thinning, roughening or chipping at inspection. Any cracking is cause for immediate replacement.
It is made from high-purity silicon selected for controlled resistivity and low trace-metal content, with a specified surface finish and tight dimensions. These properties give predictable erosion, low contamination risk and consistent electrical behaviour over the consumable life.
The typical lead time is 4-5 weeks. We recommend factoring this into your consumable stocking plan so that a qualified spare is on the shelf ahead of each scheduled PM.
The Outer Silicon Electrode Ring (CEL, OUTER, SS-V2; OEM P/N 2L10-355078-11) is a high-purity silicon consumable that completes the outer electrode surface in TEL 300 mm plasma etch chambers, shaping the edge field and chemistry that govern edge etch uniformity, defectivity and chamber matching. Because it wears through erosion, roughening and occasional chipping, it is a scheduled-replacement item where purity, dimensional accuracy and reliable supply directly protect yield. ESCT Fab Support offers ES7099-122 as a second-source, brand-new equivalent verified to form, fit and function, with a typical 4-5 week lead time to support planned maintenance.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-355078-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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