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The Outer Cathode Electrode Ring (factory marked “CEL, OUTER SS-L V2”) is a silicon consumable that forms the outer annular section of the cathode electrode (CEL) assembly in Tokyo Electron (TEL) 300 mm plasma etch process chambers. It encircles the inner electrode and the wafer-bearing region, completing the powered electrode surface at the chamber radius where the plasma sheath transitions from over the wafer to over the surrounding hardware. The “V2” designation reflects a revised geometry of this outer segment, refined by the OEM to improve edge field shaping and consumable life relative to earlier builds.
In a capacitively coupled etch reactor, the cathode is not a single monolithic plate but a segmented stack of silicon parts assembled around the electrostatic chuck. The inner electrode sits beneath and immediately around the wafer; this outer ring extends the electrode surface outward, defining where RF coupling tapers off and where the plasma is confined. Because it is silicon and sits directly in the discharge, the outer CEL ring is sacrificial: it is consumed by ion bombardment and fluorine/chlorine chemistries over thousands of RF hours and is scheduled for periodic replacement during preventive maintenance.
Although physically a “ring, ” this part is an active electrical component of the etch cell. Its resistivity, surface condition and dimensional fit all influence the local sheath voltage and the trajectory of ions reaching the wafer edge. For that reason, fab engineers treat the outer CEL ring as a process-critical consumable rather than a passive structural part, and they track its wear against device yield at the wafer perimeter.
The outer CEL ring works together with the inner electrode, the focus/edge ring and the chamber ground surfaces to set up a controlled, axisymmetric plasma over the wafer. Its responsibilities span electrical, plasma-physical and process-uniformity functions:
The outer CEL ring is machined from high-purity silicon selected for controlled resistivity and low metallic contamination, so that it can carry RF and define the cathode surface without introducing mobile metals or particles into the process. The grade and finish are chosen to give predictable erosion: the silicon should etch slowly and evenly under the production chemistry, presenting a stable surface to the plasma across its service life.
Because the outer ring sits in a precise concentric relationship with the inner electrode and the chuck, its flatness, parallelism and inner/outer diameters are held to tight tolerances. Even small gaps or steps at the joint between segments perturb the local field and create particle traps, so the part must seat flat and concentric to preserve the intended sheath geometry and thermal contact.
As an edge-region cathode component, the outer CEL ring has a direct line to the metrics that fabs watch most closely, edge die yield, within-wafer uniformity and particle counts. When the ring is fresh and correctly fitted, the etch process behaves to its qualified recipe; as it wears or sits poorly, the consequences appear first at the wafer perimeter:
The dominant wear mode is straightforward consumption: continuous ion bombardment and reactive etch chemistry slowly remove silicon from the exposed surface, thinning the ring and gradually altering its profile. As the surface recedes the local sheath geometry shifts, edge etch behaviour drifts and the part eventually reaches the end of its qualified life.
Silicon is brittle, so thermal cycling, mechanical clamping stress and careless handling can produce cracks or chipped edges. A cracked ring is a serious risk: it can shed particles onto the wafer, distort the local field and, in the worst case, fracture during a run, forcing an immediate chamber down and clean.
Over time the silicon surface can roughen, develop micro-pitting or accumulate polymer and by-product deposits depending on the process. These changes alter the secondary-emission and erosion characteristics of the surface and become particle sources, so a roughened or heavily coated ring is replaced even if it retains nominal thickness.
Replacement of the outer CEL ring is a routine but contamination-sensitive preventive-maintenance task. It should be carried out by trained technicians following the relevant TEL procedure, with the chamber vented and locked out and the RF supply isolated. The sequence below is a general guide and does not replace the OEM maintenance documentation:
Cathode electrode consumables wear on a predictable schedule, which makes them ideal candidates for proactive stocking. Sourcing the outer CEL ring through ESCT Fab Support lets fabs hold qualified spares on hand and avoid the long, unpredictable waits that drive chamber downtime:
It is the outer silicon section of the cathode electrode (CEL) assembly in a TEL 300 mm plasma etch chamber, the annular ring that extends the powered electrode surface outward around the inner electrode and wafer. “V2” denotes a revised geometry of this outer segment.
No. This is not an original OEM part. It is supplied as a second-source NEW component that is verified to match the form, fit and function of TEL OEM P/N 2L10-355755-11, intended as a compatible replacement consumable.
Service life depends on the etch chemistry, RF power and duty cycle in your process. As a silicon consumable it wears with accumulated RF hours; fabs typically tie its replacement to a preventive-maintenance interval and to edge-uniformity and particle trends rather than to a fixed time.
As the silicon thins and roughens, edge etch rate and critical dimensions drift, particle counts rise and edge die yield falls. A badly worn or cracked ring can also shed silicon and damage adjacent hardware, so running it too long risks both yield loss and unplanned downtime.
The current lead time is approximately 4–5 weeks. We recommend ordering against your PM schedule and holding buffer stock so a worn ring can be swapped without waiting on procurement.
Yes. Because the ring is an active part of the cathode and affects edge plasma behaviour, the chamber should be pumped down, seasoned and requalified with your standard process and particle/uniformity monitors before returning it to production.
The Outer Cathode Electrode Ring (CEL, OUTER SS-L V2; OEM P/N 2L10-355755-11, ESCT P/N ES7099-126) is a high-purity silicon consumable that completes the powered cathode surface at the periphery of a TEL 300 mm plasma etch chamber. By extending RF coupling and shaping the sheath at the wafer edge while scavenging fluorine and absorbing ion bombardment, it directly governs edge etch uniformity, particle performance and edge die yield. It wears predictably through erosion, can crack or roughen, and is replaced on a scheduled basis with careful, contamination-controlled handling and a chamber requalification. Available from ESCT Fab Support as a second-source NEW part with a 4–5 week lead time, it gives fabs a cost-effective, quality-controlled way to keep qualified spares on hand and protect uptime.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-355755-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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