CEL,OUTER SS-LP V2

PART DETAILS

2L10-355763-11
CEL,OUTER SS-LP V2

OEM P/N: 

2L10-355763-11

ESCT P/N: 

ES7099-129

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

CEL outer ring SS-LP V2 (OEM P/N 2L10-355763-11), outer cathode electrode ring for TEL 300 mm plasma etch systems

ESCT P/N ES7099-129, outer electrode ring for the CEL (cathode electrode) assembly in Tokyo Electron etch process chambers

The CEL Outer Ring SS-LP V2 is the outer annular member of the cathode electrode (CEL) assembly that sits at the periphery of the powered electrode stack in a Tokyo Electron (TEL) 300 mm plasma etch process chamber. Within TEL terminology, “CEL” designates the cathode/electrode hardware that forms the lower (or upper, depending on configuration) RF-driven surface bounding the plasma. The outer ring is the concentric component that surrounds the central electrode area and bridges the transition between the active electrode surface and the surrounding chamber liner and confinement hardware.

Designated SS-LP V2, this part reflects a specific chamber/process configuration and a second-revision geometry, and it is a true plasma-facing consumable. It is continuously exposed to ion bombardment, reactive fluorine- and chlorine-based chemistries, and the steep electrical and thermal gradients that exist at the edge of a 300 mm wafer. Because it lives at the boundary of the active etch region, its condition directly influences how the plasma terminates over the wafer edge, how RF current returns to ground, and how cleanly the chamber runs over a maintenance interval.

As a ring-class consumable, the CEL Outer Ring SS-LP V2 is replaced on a planned basis rather than run to catastrophic failure. Maintaining a qualified spare on the shelf is therefore central to protecting edge etch uniformity, particle performance and overall chamber matching across a fleet of TEL etchers.

Functional role of the CEL outer ring in TEL plasma etch platforms

The outer ring of the CEL assembly performs several interlinked electrical, plasma and mechanical duties at the wafer edge. It is not a passive spacer; its material, geometry and surface condition all participate in shaping the etch environment over the outermost millimetres of the wafer, where process control is hardest to achieve.

  • Extends the electrode surface outward so the plasma sheath remains uniform across the full 300 mm wafer rather than collapsing or distorting at the edge.
  • Provides a controlled RF return and impedance path around the periphery of the cathode, stabilising the electric field that drives ion energy at the wafer edge.
  • Defines the radial boundary between the active electrode and the surrounding liner, helping confine the plasma to the intended process volume.
  • Acts as a sacrificial, plasma-facing surface that absorbs ion bombardment and erosion that would otherwise attack higher-value, non-consumable electrode hardware.
  • Manages local thermal and electrical continuity between the powered electrode and adjacent grounded or floating components, influencing edge wafer temperature.
  • Maintains chamber-to-chamber dimensional consistency, supporting tool matching across a multi-chamber TEL etch fleet.

Material and process performance

As an electrode-area consumable, the CEL Outer Ring SS-LP V2 must combine plasma resistance with the correct electrical behaviour for its position in the RF circuit. Its performance is judged by how predictably it erodes and how stable it keeps the edge process between scheduled replacements.

Plasma and chemical resistance

Electrode rings in TEL etch chambers are produced from materials selected for compatibility with aggressive halogen plasmas, high-purity silicon and process-grade ceramics being typical for parts in this region. The material must resist fluorine and chlorine attack, withstand sustained ion bombardment and erode in a slow, even, predictable manner that does not generate particles or shed contaminating species onto the wafer.

  • High purity to avoid metallic or particulate contamination of the wafer edge.
  • Controlled, uniform erosion behaviour for a predictable consumable lifetime.
  • Resistance to micro-cracking and surface roughening under thermal cycling.

Dimensional and electrical stability

Because the ring participates in the RF return path and defines the edge of the active electrode, its dimensional tolerances, flatness and seating accuracy are critical. Out-of-spec geometry or a poor mating surface shifts the local impedance and field shape, directly altering edge etch rate and profile.

  • Tight inner/outer diameter and flatness tolerances to preserve sheath uniformity.
  • Consistent surface condition for repeatable RF coupling and grounding.
  • Stable seating to avoid arcing or hot spots at the electrode periphery.

Impact on tool performance and yield

The condition of the CEL outer ring is felt most strongly at the wafer edge, the region that most often limits yield on 300 mm devices. A worn, cracked or incorrectly fitted ring propagates directly into measurable process drift.

  • Edge etch rate and critical dimension drift, eroding within-wafer uniformity.
  • Tilted or bowed etch profiles in the outermost die, reducing edge-die yield.
  • Increased particle counts as eroded or cracked material sheds onto the wafer.
  • Unstable RF return leading to reflected-power excursions and arcing events.
  • Chamber-to-chamber mismatch when rings age at different rates across a fleet.
  • Shortened maintenance intervals and unplanned downtime when wear is left unchecked.

Common wear and failure modes

Erosion and surface recession

Continuous ion bombardment gradually thins the ring and roughens its plasma-facing surface. As the surface recedes, the sheath geometry and edge field change, shifting edge etch behaviour. This is the normal end-of-life mechanism and the reason the ring is treated as a scheduled consumable.

Cracking and chipping

Thermal cycling, mechanical handling and localised hot spots can initiate micro-cracks that propagate into chips or fractures. Liberated fragments become a serious particle and defect source, and a cracked ring can disturb the RF path, making this a failure mode that warrants immediate replacement.

Seating, arcing and contamination damage

A poorly seated ring or a degraded mating interface can cause localised arcing, leaving burn marks and pitting that further destabilise the field. Process residues and redeposited films can also build up, altering the surface chemistry and electrical behaviour until the ring no longer performs to specification.

Installation and replacement guidance

Replacement should be carried out by trained personnel during scheduled preventive maintenance, observing the equipment owner’s safety and cleanliness procedures. The following sequence outlines a typical approach; always defer to the relevant TEL maintenance documentation for the specific chamber.

  • Place the chamber in a safe maintenance state, venting to atmosphere and confirming RF power and gas supplies are isolated and locked out.
  • Open the chamber and remove any confinement or liner hardware needed to access the electrode periphery, noting the orientation of each part.
  • Carefully lift out the existing CEL outer ring, inspecting it and the electrode seating surface for erosion, cracking, arcing marks or residue.
  • Clean the mating surfaces per the approved procedure and verify they are free of particles, films and damage before fitting the new ring.
  • Install the new CEL Outer Ring SS-LP V2 using clean, gloved handling, seating it fully and confirming correct orientation and flatness.
  • Reassemble the confinement and liner hardware, then close the chamber and pump down, checking for leaks and correct RF behaviour.
  • Run the prescribed conditioning/season recipe and qualification wafers to confirm edge uniformity and particle performance before returning the tool to production.

Spare parts strategy for TEL etch consumables

Edge consumables such as the CEL outer ring are recurring spend items, and securing reliable, qualified supply keeps etch chambers productive and matched. ESCT Fab Support helps fabs and equipment service providers manage that supply with a focus on form, fit and function.

  • Parts cross-referenced to the OEM part number 2L10-355763-11 and tracked under ESCT P/N ES7099-129 for clear, repeatable ordering.
  • Verified to form, fit and function for the intended TEL etch chamber position.
  • A cost-effective alternative to single-source OEM purchasing, helping control consumables spend.
  • Quoted with a transparent lead time of approximately 4–5 weeks to support maintenance planning.
  • Backed by ESCT’s technical support for part identification and fleet-level spares management.

Frequently asked questions

What does the CEL outer ring SS-LP V2 do in a TEL etch chamber?

It is the outer annular member of the cathode electrode (CEL) assembly. It extends the electrode surface to the wafer edge, helps shape the plasma sheath and RF return path at the periphery, and acts as a sacrificial plasma-facing surface that protects higher-value electrode hardware.

Is this an original OEM part?

No. This is supplied as a new, OEM-compatible part from a second source. It is cross-referenced to TEL OEM part number 2L10-355763-11 and verified to form, fit and function, but it is not an original Tokyo Electron OEM part and carries no affiliation with or endorsement by the OEM.

How does wear on this ring affect my process?

As the ring erodes, the edge sheath and field shift, which can change edge etch rate, critical dimensions and profile in the outermost die. Cracking or poor seating can also raise particle counts and cause arcing, so the ring is replaced on a planned schedule to keep edge yield stable.

What is the lead time for ES7099-129?

The typical lead time is approximately 4–5 weeks. Because this is a recurring consumable, we recommend holding qualified spares on the shelf and ordering ahead of planned maintenance to avoid unplanned chamber downtime.

How do I know it will fit my chamber?

The part is matched to the OEM part number 2L10-355763-11 and the SS-LP V2 configuration. To confirm fit, quote your tool configuration and the OEM or ESCT part number to our technical team, who will verify the correct revision for your specific chamber before you order.

What is the best way to extend the life of the ring?

Follow the approved maintenance, cleaning and conditioning procedures, handle the ring only with clean gloves to avoid contamination and micro-damage, check seating during installation, and monitor edge uniformity and particle trends so the ring is replaced before erosion drives the process out of specification.

Summary

The CEL Outer Ring SS-LP V2 (OEM P/N 2L10-355763-11, ESCT P/N ES7099-129) is the outer cathode electrode ring for TEL 300 mm plasma etch chambers, governing edge plasma confinement, RF return and wafer-edge etch uniformity. As a sacrificial, plasma-facing consumable it wears predictably through erosion and must be replaced on schedule to protect edge yield, particle performance and chamber matching. ESCT Fab Support supplies this part as a verified, OEM-compatible spare with a typical 4–5 week lead time, supported by technical guidance to keep your TEL etchers running.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-355763-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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