OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The Outer Silicon Electrode Ring identified by TEL part number 2L10-250803-11 is the outer-zone segment of a segmented silicon electrode (commonly abbreviated “CEL” in TEL nomenclature) used in Tokyo Electron 300 mm plasma etch process chambers. It is a high-purity silicon ring that surrounds the central electrode plate or wafer zone and forms the radially outermost portion of the powered or grounded electrode surface directly above or below the wafer. As a directly plasma-facing consumable, it is consumed during normal operation and is scheduled for periodic replacement as part of routine chamber preventive maintenance.
In a segmented electrode design, the silicon is divided into a central region and one or more concentric outer rings so that the most heavily eroded edge zone can be replaced independently of the costly central plate. This outer ring sits at the perimeter of the electrode, immediately adjacent to the focus ring and chamber liner hardware, where the plasma sheath bends and the electric field gradient is steepest. Its condition has a direct and disproportionate influence on edge-of-wafer etch behaviour, making it one of the more frequently serviced silicon parts in the chamber.
The “10-40F” descriptor and the “PH-MG” material/grade designation in the raw part name indicate a specific silicon grade and dimensional family within the TEL electrode programme, while the “V2” suffix denotes a revised revision of the geometry. Because the ring participates simultaneously in RF coupling, gas distribution at the wafer edge and chemical reaction at the plasma boundary, both its purity and its dimensional accuracy are critical to repeatable process results.
Within a TEL capacitively coupled etch chamber, the outer silicon electrode ring performs several overlapping electrical, chemical and physical functions at the wafer perimeter, all of which contribute to edge uniformity and particle control:
The ring is machined from high-purity silicon selected for controlled resistivity and very low metallic and particulate contamination. Purity matters because the silicon is etched by the plasma in service; any embedded impurities are liberated into the chamber and can deposit on the wafer as defects. A silicon ring that is chemically matched to the central electrode also helps maintain a consistent loading effect, so that fluorine consumption and by-product generation at the edge mirror conditions across the rest of the electrode.
Because the ring defines the edge sheath geometry, its inner and outer diameters, thickness and seating flatness must be held to tight tolerances. Even small height or concentricity errors shift the sheath boundary and degrade edge uniformity. Silicon is also brittle, so chamfer and edge detail are designed to resist chipping during handling and thermal cycling, and the part is sized to retain its functional profile across an extended erosion budget before reaching its replacement limit.
The outer silicon electrode ring sits exactly where edge yield is won or lost, so its condition propagates directly into device results and tool availability:
The dominant wear mechanism is gradual erosion by ion bombardment and chemical etch. As the silicon thins and its profile recedes, the local sheath shape changes and edge etch rates drift away from target. Once erosion reaches the defined limit, the ring must be replaced to restore the original field geometry.
Silicon is brittle and intolerant of mechanical shock and thermal gradients. Mishandling, uneven seating or aggressive thermal cycling can cause chips or radial cracks. Localised arcing, often from a poor contact interface or accumulated residue, can produce pits and burn marks that act as particle and defect sources.
Polymer and etch by-products accumulate on the ring surface and on its seating face over time. Build-up on the contact interface raises contact resistance and disturbs the RF return path, while flaking deposits release particles onto the wafer. Backside fouling also degrades thermal and electrical contact, contributing to edge non-uniformity.
Replacement should follow the TEL maintenance procedure for the specific chamber. The following sequence summarises good practice for handling a brittle, plasma-facing silicon consumable:
Outer silicon electrode rings are recurring consumables, so a planned sparing strategy protects both yield and uptime. ESCT Fab Support supplies this part as a cost-effective, quality-controlled alternative for fabs managing TEL etch fleets:
It forms the outermost silicon segment of a TEL segmented electrode, extending the electrode surface to the wafer edge. It shapes the plasma sheath, supports the RF return path and provides a chemically matched sacrificial surface that governs edge etch uniformity and particle performance.
No. This is supplied as a second-source new, OEM-compatible part. It is manufactured to match the original TEL component to form, fit and function and is cross-referenced to OEM P/N 2L10-250803-11, but it is not an original Tokyo Electron branded part.
Service life depends on recipe aggressiveness, power levels and run hours. As a plasma-facing consumable it erodes continuously and is replaced when it reaches its defined wear limit or when edge uniformity and particle data drift from baseline, typically aligned with scheduled chamber preventive maintenance.
The ring is etched in service, so any impurities it contains are released into the chamber and can deposit on the wafer as defects. High purity and controlled resistivity keep contamination low and give consistent RF coupling and reaction chemistry at the wafer edge.
Silicon is brittle, so use clean powder-free gloves, support the ring evenly and avoid mechanical shock. Inspect for chips or cracks before fitting, clean the seating surface and seat the ring concentrically with full, even contact to maintain a stable electrical interface.
Typical lead time is 4–5 weeks. Because the ring is a recurring consumable, we recommend forward ordering and holding buffer stock so replacements are on hand to match your planned maintenance windows.
The Outer Silicon Electrode Ring (OEM P/N 2L10-250803-11, ESCT P/N ES7099-045) is a high-purity silicon consumable that forms the outer segment of a TEL segmented electrode in 300 mm plasma etch chambers. By shaping the edge plasma sheath, carrying part of the RF return path and providing a chemically matched sacrificial surface, it directly governs edge etch uniformity, particle performance and chamber matching. Its purity, dimensional accuracy and erosion behaviour make it a critical, frequently replaced part, and ESCT Fab Support offers it as a second-source new alternative to help fabs control cost and protect uptime.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250803-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
We use cookies We use analytics cookies to see how visitors use this site, so we can improve it. They are set only if you accept. Read our Cookie Policy.
