2L10-250520-11
CEL,CL380-364-0.5(PH)V2

Silicon cathode electrode CL380-364 (OEM P/N 2L10-250520-11), plasma-facing cathode for TEL 300 mm etch systems

ESCT P/N ES7099-109 · TEL silicon cathode electrode for 300 mm capacitively coupled plasma etch chambers

The CEL CL380-364-0.5(PH)V2 is a silicon cathode electrode used in Tokyo Electron (TEL) 300 mm capacitively coupled plasma (CCP) etch process chambers. As a cathode-class consumable, it forms one of the powered or grounded electrode surfaces that bound the plasma, directly facing the discharge and bearing the brunt of continuous ion bombardment. The “CEL” designation and the cathode part type identify this as a machined high-purity silicon electrode body rather than a quartz, ceramic or aluminium hardware item, and the “(PH)” and “V2” suffixes denote a specific surface/phosphorus-doped variant and a second-revision geometry within the CL380 family.

Positioned at the boundary of the etch reaction volume, the cathode electrode establishes the electric field that accelerates ions toward the wafer or that defines the counter-electrode reference, depending on the chamber architecture. Because it is silicon, it is chemically compatible with fluorine- and chlorine-based etch chemistries and is intentionally consumable: the surface is sacrificially eroded so that the process environment remains clean, predictable and free of metallic contamination. The 0.5 dimensional code and the doping/finish callouts make this a process-matched item, resistivity, thickness and flatness all influence how the plasma couples to the wafer.

Within a fab, the cathode electrode is one of the parts that most directly governs etch rate stability, within-wafer uniformity and particle performance. As it erodes over its service life, the chamber drifts; replacing it on schedule with a correctly specified, dimensionally faithful part is therefore a routine but high-leverage element of preventive maintenance.

Functional role of the silicon cathode electrode in TEL 300 mm etch platforms

The cathode electrode is an active participant in plasma generation, not merely a structural surface. In a CCP etch chamber it works together with the opposing electrode, the RF delivery network and the gas distribution hardware to create and shape the discharge that performs the etch. Its principal functions include:

• Defining one boundary of the plasma sheath and setting the electric field that accelerates ions toward the wafer surface.
• Providing a controlled silicon surface that participates in the etch chemistry, scavenging fluorine radicals and helping to balance polymer deposition and etch.
• Carrying RF current and forming part of the RF return path, so its resistivity and contact integrity affect impedance matching and delivered power.
• Maintaining a uniform gap and parallelism to the opposing electrode, which underpins centre-to-edge etch uniformity across the 300 mm wafer.
• Acting as a sacrificial, metal-free surface so that erosion products are benign silicon-bearing species rather than contaminating metals.
• Contributing to thermal management at the electrode face, conducting heat away from the plasma-loaded surface to the supporting hardware.

Material and process performance

Silicon purity and doping

The electrode is machined from high-purity silicon, with the phosphorus-doped (PH) variant selected to deliver a controlled electrical resistivity. Resistivity matters because the cathode must conduct RF current while remaining electrically consistent across its area; an out-of-specification material shifts power coupling and can change etch rate and selectivity.

• Tightly controlled bulk resistivity from phosphorus doping for repeatable RF behaviour.
• Low metallic and mobile-ion contamination to protect device yield and prevent cross-contamination of subsequent process steps.
• Chemical compatibility with fluorocarbon and chlorine etch chemistries, eroding to volatile or benign species rather than depositing particles.

Surface finish, flatness and dimensional fidelity

The plasma-facing surface and overall flatness are as important as the bulk material. Surface texture influences sheath stability and particle generation, while thickness and flatness define the electrode gap and therefore field uniformity. The V2 revision geometry must be reproduced faithfully so that fit and process behaviour match the installed base.

• Controlled surface finish to minimise micro-arcing initiation sites and particle shedding.
• Tight flatness and thickness tolerances to preserve a uniform electrode gap and consistent sheath geometry.
• Faithful reproduction of mounting features and the V2 profile for drop-in form, fit and function.

Impact on tool performance and yield

Because the cathode electrode sits at the heart of the discharge, its condition propagates directly into wafer-level results. A correctly specified, fresh electrode supports stable, in-spec processing; a worn, contaminated or mismatched part erodes both etch performance and yield. Key consequences include:

• Etch rate drift and selectivity changes as the silicon surface erodes and the gap opens up.
• Degraded within-wafer and wafer-to-wafer uniformity, widening critical-dimension distributions.
• Increased particle counts and defectivity once the eroded surface begins to shed material.
• Unstable RF matching and reflected power if resistivity or electrical contact is compromised.
• Unscheduled chamber downtime and re-qualification cycles when failure is allowed to progress.

Common wear and failure modes

Ion-bombardment erosion and thinning

Continuous ion bombardment sputters and etches the silicon surface over time. As the electrode thins, the electrode gap changes and sheath geometry shifts, producing gradual process drift that eventually pushes the chamber out of specification and signals end of useful life.

Surface roughening, cracking and particle generation

Localised hot spots, micro-arcing and thermal cycling can roughen, pit or crack the silicon. A degraded surface becomes a particle source, raising defect counts on the wafer, and in severe cases mechanical cracking can occur, demanding immediate replacement.

Electrical and contact degradation

Erosion or contamination at mounting and contact interfaces increases contact resistance and disturbs the RF return path. The result is unstable impedance matching, rising reflected power and inconsistent delivered energy, all of which destabilise the etch process.

Installation and replacement guidance

Replacement should follow the relevant TEL preventive-maintenance procedure for the specific chamber, observing all electrostatic-discharge, vacuum and contamination-control practices. The following sequence outlines good practice:

• Place the tool in a safe maintenance state, vent the chamber and lock out RF and gas supplies per site procedure.
• Working in clean gloves, remove the retaining hardware and carefully lift out the worn cathode electrode without scoring adjacent surfaces.
• Inspect the mating surfaces, contact points and supporting hardware for erosion, residue or damage, and clean as specified.
• Unpack the new ES7099-109 electrode, verify it against the part number and confirm the V2 geometry and orientation features before fitting.
• Seat the electrode evenly, with full, even electrical contact, and torque all fasteners to the specified values in the correct sequence.
• Pump down, perform leak and RF checks, then run season/conditioning recipes and verify etch rate and uniformity before returning to production.
• Record the installation date and chamber RF-hours to support life-tracking and future planning.

Spare parts strategy for TEL 300 mm etch chambers

Silicon cathode electrodes are scheduled consumables, so hold a verified spare to avoid chamber downtime when a part reaches end of life. ESCT Fab Support supplies the CL380-364 electrode as a cost-effective, quality-controlled alternative to single-sourcing through the OEM, with the following advantages:

• Supplied as a second-source new part verified to form, fit and function against the original specification.
• Controlled high-purity silicon material and doping to protect process stability and yield.
• Competitive pricing and supply diversity that reduce dependence on a single OEM channel.
• A typical lead time of 4–5 weeks, supporting planned preventive-maintenance scheduling.
• Clear cross-referencing to OEM P/N 2L10-250520-11 and ESCT P/N ES7099-109 for confident ordering.

Frequently asked questions

What does this part do in the etch chamber?

It is a silicon cathode electrode that forms a plasma-facing boundary of the discharge in a TEL 300 mm CCP etch chamber. It helps establish the electric field, carries RF current, participates chemically in the etch and erodes sacrificially to keep the process clean.

Is this an original TEL OEM part?

No. This is a second-source new part, supplied as a new OEM-compatible component verified to form, fit and function against OEM P/N 2L10-250520-11. It is not an original TEL OEM part and is not sold as one.

Why is the electrode made of silicon rather than metal?

Silicon is chemically compatible with fluorine- and chlorine-based etch chemistries, erodes to benign species rather than contaminating the wafer with metals, and helps balance radical and polymer behaviour. Its controlled resistivity also lets it serve as an electrical electrode.

How do I know when it needs replacing?

Indicators include measurable etch rate or uniformity drift, rising particle counts, unstable RF matching and visible surface erosion, pitting or thinning. Most fabs replace the electrode at a defined RF-hour interval set by their qualification data.

What do the suffixes (PH) and V2 mean?

(PH) denotes the phosphorus-doped material/finish variant used to set the electrode’s resistivity, and V2 indicates the second-revision geometry within the CL380-364 family. Matching both means the spare behaves identically to the installed part.

What is the lead time and how should I plan stock?

Typical lead time is 4–5 weeks. Because the electrode is a scheduled consumable, we recommend holding at least one verified spare per active chamber and reordering against your preventive-maintenance calendar to avoid unplanned downtime.

Summary

The CL380-364-0.5(PH)V2 silicon cathode electrode (ESCT P/N ES7099-109, OEM P/N 2L10-250520-11) is a plasma-facing cathode consumable for TEL 300 mm capacitively coupled etch chambers. It shapes the plasma field, carries RF current, participates in the etch chemistry and erodes sacrificially to protect process cleanliness. Its high-purity, phosphorus-doped silicon, controlled surface finish and faithful V2 geometry make it a yield-critical part whose timely replacement keeps etch rate, uniformity and particle performance in specification. Supplied by ESCT Fab Support as a verified second-source new part with a 4–5 week lead time, it offers fabs a dependable, cost-effective route to keeping chambers running.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250520-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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