CEL,INNER(PH-MG)V2

PART DETAILS

2L10-250820-11
CEL,INNER(PH-MG)V2

OEM P/N: 

2L10-250820-11

ESCT P/N: 

ES7099-049

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Inner cathode electrode (OEM P/N 2L10-250820-11), plasma-facing CEL consumable for TEL 300 mm etch systems

ESCT P/N ES7099-049, Tokyo Electron (TEL) inner CEL cathode, V2 configuration, 2nd source NEW

The Inner Cathode Electrode supplied under ESCT part number ES7099-049 is a plasma-facing CEL (cathode/electrode) consumable used in Tokyo Electron (TEL) 300 mm capacitively coupled plasma etch chambers. Identified on the OEM bill of materials as 2L10-250820-11 and carrying the "INNER" designation, this component occupies the inner zone of the segmented lower cathode assembly, directly beneath and surrounding the wafer support region. Its "V2" revision reflects an updated geometry or surface specification intended to refine plasma coupling and extend service life relative to the original release.

In a segmented cathode architecture, the chamber distinguishes between an inner electrode zone that sits under the active device area of the wafer and outer zones that condition the plasma toward the wafer edge. The inner CEL is the powered, plasma-exposed surface that establishes the sheath through which ions are accelerated toward the substrate. As such, it is fundamental to delivering uniform ion energy and flux across the central portion of a 300 mm wafer, where the bulk of patterned die reside.

Because the inner cathode is continuously bombarded by energetic ions and bathed in reactive fluorine- or chlorine-based chemistries, it is treated as a scheduled consumable. Predictable replacement of this part keeps etch rate, profile control and particle performance inside the tight process windows demanded by advanced logic and memory production, and prevents the slow, hard-to-diagnose drift that accompanies a worn or eroded electrode.

Functional role of the inner cathode electrode in TEL etch platforms

The inner CEL is more than a passive surface; it is an active element of the RF circuit and the plasma sheath that governs etch behaviour across the wafer centre. Within a TEL 300 mm etch chamber it performs several interlocking roles.

  • Couples RF power into the plasma over the inner wafer zone, setting the local sheath voltage and the energy of ions arriving at the substrate.
  • Defines the inner electrode area, which together with the outer segments determines the area ratio and therefore the self-bias and ion energy distribution.
  • Provides a low-impedance RF return path that stabilises plasma potential and minimises stray coupling to grounded chamber hardware.
  • Presents a controlled, process-compatible surface that contributes consumable material to the plasma in a predictable, qualified manner rather than introducing contaminant species.
  • Supports centre-to-edge tuning when used in conjunction with outer rings and zoned bias, helping flatten etch rate and critical dimension across the full 300 mm diameter.
  • Maintains thermal contact with the underlying cathode body so that surface temperature, and hence polymer deposition and etch chemistry, stays within specification.

Material and process performance

Inner cathode electrodes for TEL etch chambers are manufactured from plasma-grade materials selected for purity, controlled electrical behaviour and predictable erosion. The combination of bulk material and any surface treatment determines both how the part couples power and how cleanly it ages in aggressive etch chemistries.

Bulk material and purity

The electrode body is produced from high-purity, plasma-compatible material with tightly controlled bulk and trace composition, so that sputtered and etched species do not introduce metallic or particulate contamination onto the wafer. Dimensional precision on the plasma-facing face and the mounting interface is held to fine tolerances to preserve the electrical area and thermal contact the process model assumes.

  • High-purity feedstock to limit metallic contamination and keep on-wafer defectivity low.
  • Controlled resistivity and dielectric behaviour for repeatable RF coupling across the inner zone.
  • Tight flatness and thickness tolerances to maintain the designed electrode area and sheath geometry.

Surface condition and erosion resistance

The plasma-facing surface is finished and, where applicable, treated to resist preferential erosion and to manage polymer adhesion during fluorocarbon and halogen etch steps. A stable surface texture keeps the etch chemistry and by-product transport consistent from the first wafer of a kit life to the last, which is precisely the behaviour the V2 revision is intended to improve.

  • Engineered surface finish to delay localised pitting and faceting under ion bombardment.
  • Predictable polymer adhesion and release, reducing flaking and particle generation between cleans.
  • Gradual, uniform erosion that allows wear to be tracked against RF-hours or wafer count.

Impact on tool performance and yield

Because the inner CEL sits directly in the RF path beneath the wafer centre, its condition propagates straight into the metrics that fabs watch most closely. A degraded electrode rarely fails outright; instead it shifts results in ways that consume engineering time and risk product.

  • Centre-to-edge etch rate non-uniformity as the inner electrode area and surface drift away from specification.
  • Critical dimension and profile variation in central die, directly affecting device yield.
  • RF reflected-power instability and matching-network drift caused by changing electrode impedance.
  • Increased particle counts and on-wafer defects from eroded material or shed polymer.
  • Longer requalification and chamber-matching effort, eroding tool availability and overall equipment effectiveness.

Common wear and failure modes

As a plasma-exposed consumable, the inner cathode wears through a predictable set of mechanisms. Recognising them early supports condition-based replacement and avoids unplanned excursions.

Ion-induced erosion and thinning

Continuous ion bombardment gradually removes material from the plasma-facing surface, thinning the electrode and enlarging its effective area. This changes the inner-zone sheath and self-bias, manifesting as a slow shift in centre etch rate and CD that eventually moves the process outside its control limits.

Polymer build-up and particle shedding

Fluorocarbon chemistries deposit polymer that accumulates on cooler or recessed areas of the electrode. When deposits thicken and lose adhesion they flake, generating particles that land on the wafer. A surface that has lost its qualified finish accelerates this cycle and shortens the interval between wet cleans.

Cracking and interface degradation

Thermal cycling and handling can initiate cracks or chips, particularly at edges and fastener locations. Degradation of the mounting interface raises contact resistance and creates thermal hot spots, producing arcing, localised over-etch and further accelerated erosion of the part.

Installation and replacement guidance

Replacement should follow the relevant TEL maintenance procedure for the specific chamber, performed by trained personnel under appropriate cleanroom and ESD controls. The sequence below summarises good practice for fitting the inner CEL cathode.

  • Place the chamber in a safe maintenance state, vent to atmosphere, and isolate RF and gas supplies per the lockout procedure.
  • Remove the wafer support hardware and any outer rings or covers needed to access the inner electrode, recording orientation as you go.
  • Detach the existing inner CEL, inspect the cathode body and mating surface, and clean to remove polymer and particulate residue.
  • Verify the replacement against ES7099-049 / OEM 2L10-250820-11 and confirm the V2 configuration matches the chamber build before fitting.
  • Seat the new electrode using clean, gloved handling, with full contact at the thermal and RF interface and correct fastener torque.
  • Reassemble surrounding hardware, pump down, and perform leak and RF checks before introducing process gases.
  • Run seasoning and qualification wafers, confirm uniformity and particle performance, and reset the consumable life counter.

Spare parts strategy for TEL etch consumables

Holding a qualified second source for plasma-facing cathode consumables protects both budget and tool uptime. ESCT Fab Support supplies the inner CEL electrode as a form-, fit- and function-verified alternative, giving fabs flexibility without compromising process integrity.

  • Cross-referenced to OEM P/N 2L10-250820-11 under ESCT P/N ES7099-049 for straightforward identification.
  • Supplied as a 2nd source NEW part, verified to form, fit and function for the target chamber.
  • A cost-effective alternative to sole-source procurement, supporting competitive spares budgets.
  • A defined lead time of 4-5 weeks to support planned preventive-maintenance scheduling.
  • Backed by ESCT application support for consumable selection, life tracking and kit planning.

Frequently asked questions

What does this inner CEL cathode do in the chamber?

It is the powered, plasma-facing electrode in the inner zone of the segmented lower cathode. It couples RF energy into the plasma beneath the wafer centre, sets the local ion energy and provides an RF return path, directly influencing etch rate and uniformity across the central die.

Is this an original OEM part?

No. This item is supplied as a new, 2nd source, OEM-compatible part. It is verified to the form, fit and function of OEM P/N 2L10-250820-11 but is not an original Tokyo Electron component and is not sold as one.

What does the V2 designation mean?

V2 indicates the second configuration of this electrode, reflecting an updated geometry or surface specification. Confirm that your chamber build expects the V2 version before fitting, as it is matched to the corresponding revision of the surrounding cathode hardware.

How do I know when the electrode needs replacing?

Typical indicators include drifting centre-to-edge uniformity, CD or profile movement in central die, rising particle counts, RF reflected-power instability and visible erosion, pitting or polymer flaking. Most fabs replace it on a qualified interval based on RF-hours or wafer count.

Will fitting it require requalification?

As with any plasma-facing consumable, seasoning followed by uniformity and particle qualification is recommended after installation. This confirms the chamber has returned to its process window and allows the consumable life counter to be reset.

What is the lead time?

The standard lead time for ES7099-049 is 4-5 weeks. Building this into your preventive-maintenance and spares planning helps keep a qualified electrode on hand before the installed part reaches end of life.

Summary

The Inner Cathode Electrode (ESCT P/N ES7099-049, OEM P/N 2L10-250820-11) is a plasma-facing CEL consumable for TEL 300 mm etch chambers, sitting in the inner zone of the segmented lower cathode where it couples RF power, sets central ion energy and shapes etch uniformity. It wears through ion erosion, polymer build-up and interface degradation, all of which affect uniformity, CD, particles and tool availability. Supplied as a new, 2nd source, form-, fit- and function-verified part with a 4-5 week lead time, it offers fabs a dependable, cost-effective option for keeping TEL etch tools inside specification.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250820-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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