(C2)CEL,INNER(PH-MG)V2

PART DETAILS

2L10-250820-11
(C2)CEL,INNER(PH-MG)V2

OEM P/N: 

2L10-250820-11

ESCT P/N: 

ES7099-015

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Inner cathode electrode (CEL), V2 (OEM P/N 2L10-250820-11), segmented silicon cathode for TEL 300 mm plasma etch systems

ESCT P/N ES7099-015, inner CEL electrode segment for Tokyo Electron (TEL) capacitively coupled etch chambers

The Inner Cathode Electrode, designated by Tokyo Electron as a CEL (cathode electrode) inner segment, is the powered electrode plate that sits directly beneath the wafer-bearing region of a TEL 300 mm capacitively coupled plasma (CCP) etch chamber. In the original component naming “(C2)CEL, INNER(PH-MG)V2”, the “INNER” designation marks this as the central section of a segmented cathode assembly, while the “V2” suffix identifies it as the second-generation revision of the part geometry. It is one of the most electrically and thermally active consumables in the lower electrode stack.

In a segmented cathode architecture, the cathode is divided into concentric inner and outer zones so that RF coupling, DC self-bias and ion energy can be tuned independently across the wafer radius. This inner electrode handles the high-density central plasma region directly above the chuck and is fed by the RF return path of the matching network. Because it is in intimate contact with the plasma sheath, it is consumed by ion bombardment and fluorine- or chlorine-based chemistry over its service life and must be treated as a scheduled-replacement consumable rather than a permanent fixture.

Maintaining the correct inner CEL geometry, surface condition and electrical contact keep centre-to-edge etch uniformity within process windows. As the powered electrode erodes, sheath voltage distribution shifts, central etch rate drifts and particle counts climb, which is why fabs hold this electrode as a high-turn maintenance spare. ESCT Fab Support supplies ES7099-015 as a 2nd-source new, form-fit-and-function equivalent to the TEL part.

Functional role of the inner cathode electrode in TEL etch platforms

As the inner section of the powered cathode, this electrode performs several coupled functions that determine how plasma is generated and shaped across the central wafer region:

  • Couples RF power from the matching network into the central plasma volume, establishing the capacitive discharge above the wafer centre.
  • Develops and sustains the DC self-bias that sets ion bombardment energy and directionality for anisotropic etch in the inner zone.
  • Provides a defined, low-impedance RF return path so that sheath voltage and current density remain stable and repeatable.
  • Shapes the inner boundary of the plasma sheath, working with the outer cathode segment to control centre-to-edge etch rate balance.
  • Conducts heat from the plasma-loaded surface into the underlying chuck and cooling structure, helping stabilise wafer and electrode temperature.
  • Presents a controlled, process-compatible surface chemistry so that erosion products do not contaminate the etch or seed particles.

Material and process performance

Cathode electrodes in TEL etch chambers are typically high-purity silicon or a closely controlled silicon-based grade selected for plasma compatibility and predictable erosion. The performance of ES7099-015 depends on holding tight tolerances on material purity, resistivity and surface finish.

Material purity and plasma compatibility

High-purity electrode material minimises metallic contamination as the surface is sputtered and chemically attacked by fluorine and chlorine radicals. Consistent bulk resistivity is critical because it sets how RF energy couples through the electrode and influences the self-bias developed across the inner zone.

  • Controlled trace-metal content to protect device yield from mobile-ion and metallic contamination.
  • Specified resistivity range so RF coupling and DC bias match the original electrode behaviour.
  • Erosion chemistry that yields volatile by-products rather than redeposited residue.

Surface finish and dimensional tolerance

Surface finish governs the local electric field and the rate at which the electrode generates particles as it wears. Flatness and thickness tolerance give uniform contact pressure against the underlying conductive and cooling interfaces, keeping both electrical and thermal resistance even across the part.

  • Uniform surface finish to suppress hot spots, micro-arcing and premature particle shedding.
  • Tight flatness and thickness control for even contact and predictable sheath geometry.
  • Clean, defined edges at the inner/outer segment boundary to avoid field concentration.

Impact on tool performance and yield

Because the inner CEL sits at the heart of the discharge, its condition propagates directly into wafer-level results:

  • Centre-to-edge etch-rate uniformity, which drifts as the electrode surface recedes and self-bias changes.
  • Critical dimension and profile control in the inner die zone, tied to stable ion energy.
  • Particle performance, since an eroded or arced surface becomes a defect source.
  • Process repeatability chamber-to-chamber, which depends on consistent electrode resistivity and geometry.
  • Mean time between cleans and overall tool availability, both reduced by a worn or contaminated electrode.

Common wear and failure modes

Plasma erosion and surface recession

Continuous ion bombardment and reactive-gas attack steadily sputter the powered surface, thinning the electrode and altering its profile. As thickness drops, the sheath voltage distribution shifts, central etch rate moves off target and uniformity degrades until the part falls outside its qualification window.

Arcing and localised damage

Field concentration at micro-defects, contamination or worn edges can trigger arcing. Arc sites produce pits, splatter and a sudden burst of particles, and repeated arcing can permanently compromise the electrode surface and the contact interface beneath it.

Contact degradation and particle generation

Over many cycles the contact and cooling interfaces can accumulate deposits or lose intimate contact, raising electrical and thermal resistance. The result is hotter operation, unstable bias and a rising particle count as redeposited material flakes from the eroded surface.

Installation and replacement guidance

Replacement should follow TEL maintenance procedures and be carried out by trained personnel under appropriate cleanliness controls. The following sequence summarises good practice:

  • Place the tool in a safe maintenance state, isolating RF and gas supplies and venting the chamber per procedure.
  • Remove any overlying focus ring, cover ring and outer electrode hardware to expose the inner CEL segment.
  • Lift out the worn inner electrode and inspect the contact and cooling interfaces for deposits, erosion or arc damage.
  • Clean the seating surfaces and verify flatness so the new electrode makes uniform electrical and thermal contact.
  • Install ES7099-015 with clean, powder-free gloves, observing any keying or orientation features and avoiding surface contact.
  • Reassemble the surrounding rings and hardware to specified torque, then pump down and leak-check the chamber.
  • Run season/conditioning recipes and verify etch rate, uniformity and particle performance before returning the tool to production.

Spare parts strategy for TEL etch consumables

Cathode electrodes are scheduled consumables, so holding a qualified spare protects against unplanned downtime when a chamber drifts out of spec. Sourcing through ESCT Fab Support gives engineering and procurement teams a dependable alternative supply line:

  • 2nd-source new parts verified to the original form, fit and function for confident drop-in use.
  • A defined lead time of 4-5 weeks to support planned maintenance scheduling.
  • Clear cross-referencing to OEM P/N 2L10-250820-11 and ESCT P/N ES7099-015 for straightforward ordering.
  • Material and dimensional control aligned to plasma-compatible electrode requirements.
  • A cost-effective alternative to sole-source procurement, supporting multi-source supply resilience.

Frequently asked questions

What does this inner CEL electrode actually do in the chamber?

It is the powered cathode segment beneath the central wafer region. It couples RF energy into the inner plasma zone, sets the local DC self-bias and ion energy, and provides the RF return path that keeps the central discharge stable and repeatable.

Is this an original TEL OEM part?

No. ES7099-015 is supplied as a 2nd-source new, OEM-compatible component verified to the form, fit and function of TEL P/N 2L10-250820-11. It is not an original OEM part and is not sold as one, but is intended as a direct equivalent.

Why is this part split into inner and outer sections?

A segmented cathode lets the tool tune RF coupling and bias separately across the wafer radius. The inner electrode governs the central zone while the outer segment handles the edge, giving engineers independent control over centre-to-edge etch uniformity.

How do I know when the electrode needs replacing?

Watch for drifting central etch rate, degrading centre-to-edge uniformity, rising particle counts or arcing events. These symptoms, along with measured surface recession against the maintenance limit, indicate the electrode has reached end of life.

What is the lead time for ES7099-015?

The standard lead time is 4-5 weeks. We recommend holding a qualified spare on the shelf so that a planned electrode change or an unexpected uniformity excursion does not stall a chamber waiting on supply.

Can installing this part affect process results?

Any cathode change alters the discharge slightly, so the chamber should be re-seasoned and re-qualified after installation. Verifying etch rate, uniformity and particle performance before returning to production confirms the new electrode is performing within the process window.

Summary

The Inner Cathode Electrode (CEL), V2 (TEL P/N 2L10-250820-11, ESCT P/N ES7099-015) is the powered central electrode segment in TEL 300 mm capacitively coupled etch chambers. It couples RF power into the inner plasma zone, sets ion energy through DC self-bias and shapes centre-to-edge uniformity, all while withstanding continuous plasma erosion. As a high-purity, tightly toleranced consumable, its condition directly influences etch performance, particle counts and yield, making it a key scheduled-replacement spare. ESCT Fab Support supplies it as a 2nd-source new part with a 4-5 week lead time to keep TEL etch tools running within specification.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250820-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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