CEL,CL380-364-0.5(PH)V2

PART DETAILS

2L10-250520-11
CEL,CL380-364-0.5(PH)V2

OEM P/N: 

2L10-250520-11

ESCT P/N: 

ES7099-059

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Silicon cathode electrode CL380-364-0.5 (PH) V2 (OEM P/N 2L10-250520-11), RF electrode for TEL 300 mm plasma etch systems

ESCT P/N ES7099-059, Tokyo Electron (TEL) cathode replacement, 2nd source NEW

The CL380-364-0.5 (PH) V2 cathode is a high-purity silicon electrode used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. Carrying TEL OEM part number 2L10-250520-11 and supplied under ESCT part number ES7099-059, this component is the driven electrode surface that sits directly in the active plasma region of a capacitively-coupled etch chamber. The “CEL” designation identifies it as a cathode electrode plate, while the V2 suffix denotes a specific revision of the electrode geometry and the “(PH)” code reflects a defined surface finish and through-feature configuration.

Within the chamber stack, the cathode electrode is one of the most electrically and chemically demanding consumables. It conducts RF energy into the process gas to strike and sustain the plasma, it is continuously bombarded by accelerated ions, and on many TEL etch architectures it is also perforated to act as a gas distribution surface that meters reactant flow across the wafer. Because it is fabricated from semiconductor-grade silicon, the electrode itself is gradually consumed during processing, which is precisely why it is treated as a scheduled-replacement consumable rather than a permanent assembly.

The condition of this cathode has a direct, measurable bearing on etch rate, within-wafer uniformity, plasma stability and particle performance. A worn, cracked or contaminated electrode is one of the most common root causes of drift in critical-dimension control and of unexplained particle excursions, making it a part that process and equipment engineers monitor closely across the consumable lifecycle.

Functional role of the silicon cathode in TEL 300 mm etch platforms

The cathode electrode performs several overlapping duties simultaneously, combining an electrical, a chemical and a gas-handling function in a single silicon plate. In a TEL capacitively-coupled etch chamber its principal roles include the following.

  • Coupling RF power into the process gas to ignite and sustain a uniform plasma above the wafer surface.
  • Providing a defined, conductive electrode boundary that shapes the sheath and the distribution of ion energy across the wafer.
  • Acting as a silicon source surface that contributes to fluorine scavenging and polymer chemistry balance during etch steps.
  • Distributing process gas through perforations or showerhead features to control reactant delivery and centre-to-edge flow.
  • Forming part of the RF return and grounding topology that keeps the discharge symmetric and stable.
  • Maintaining a thermally and dimensionally stable surface so that etch behaviour repeats wafer to wafer and lot to lot.

Material and process performance

Silicon purity and plasma chemistry

The electrode is machined from high-resistivity, semiconductor-grade silicon precisely because the material participates in the etch chemistry. As the plasma erodes the silicon surface, it releases silicon that helps regulate free fluorine and supports the passivation and polymer balance that defines selectivity and profile control.

  • High-purity silicon minimises metallic and mobile-ion contamination of the wafer.
  • Controlled bulk resistivity supports consistent RF coupling and sheath behaviour.
  • Uniform grain and crystal characteristics promote even erosion rather than localised pitting.
  • Material consistency keeps the silicon-loading contribution to chemistry stable across the consumable’s life.

Surface finish and feature geometry

The defined surface finish and the precision of any gas-feed perforations are central to how this V2 electrode behaves. Surface roughness influences plasma anchoring and particle generation, while hole diameter, pitch and edge quality govern how evenly gas is metered across the 300 mm wafer.

  • A controlled finish reduces flaking and particle shedding under ion bombardment.
  • Tight flatness and parallelism preserve a uniform gap and sheath across the wafer.
  • Consistent perforation geometry keeps gas conductance and flow distribution repeatable.
  • Clean, chip-free feature edges limit early erosion sites and local field concentration.

Impact on tool performance and yield

Because the cathode is simultaneously an RF electrode, a chemistry source and often a gas-distribution surface, its condition propagates directly into the metrics that determine device yield. The consequences of running an out-of-specification or end-of-life electrode include the following.

  • Drift in etch rate and within-wafer uniformity as the surface erodes unevenly.
  • Shifts in critical-dimension control and feature profile as silicon loading changes.
  • Increased particle counts and defectivity from flaking or enlarged perforations.
  • Plasma instability, arcing or impedance changes that disturb the RF match.
  • Reduced mean time between cleans and more frequent unscheduled chamber interventions.
  • Scrap or rework risk where uniformity excursions are not caught at metrology.

Common wear and failure modes

Plasma erosion and thinning

The most fundamental wear mechanism is gradual consumption of the silicon by ion bombardment and chemical attack. As the electrode thins, its impedance, gap and silicon-loading contribution all change, and at a certain point the surface no longer supports the stable, uniform plasma the recipe was qualified against.

Cracking and thermal stress

Silicon is strong but brittle, so repeated thermal cycling, RF stress and improper handling or clamping can initiate cracks. A cracked electrode is a serious failure: it can shed particles, distort the local electric field, cause arcing and, in the worst case, fracture during processing.

Perforation enlargement and deposition

Where the electrode carries gas-feed holes, those features erode preferentially and can enlarge or develop rough edges over time, altering local gas conductance. Conversely, polymer and by-product deposition can partially occlude features or build up on the surface, both of which skew flow distribution and feed particle excursions.

Installation and replacement guidance

Cathode replacement should be carried out by trained personnel following the relevant TEL maintenance procedures and the host fab’s safety and contamination controls. The general sequence is as follows.

  • Place the tool in a safe maintenance state: shut down RF, isolate process gases, vent the chamber and confirm lockout/tagout.
  • Allow the chamber and electrode to cool fully and verify there is no residual energised hazard before opening.
  • Remove any upper assembly, retaining hardware or shields needed to access the cathode, recording fastener positions and torque.
  • Withdraw the worn electrode using clean, powder-free gloves and approved silicon handling tools to avoid chips and contamination.
  • Inspect mating surfaces, RF contacts and seals; clean per procedure and confirm the new electrode is the correct V2 configuration before fitting.
  • Seat the new CL380-364-0.5 (PH) V2 cathode, with even contact and correct alignment, then fasten to specified torque in the prescribed sequence.
  • Reassemble, pump down, leak check, and run the chamber’s qualification, season and particle-verification recipes before returning to production.

Spare parts strategy for TEL etch consumables

Silicon cathodes are scheduled-replacement consumables, so keeping qualified spares on hand protects tool availability. ESCT Fab Support helps fabs maintain that buffer with reliable, cost-effective sourcing.

  • 2nd source, new electrodes verified to the form, fit and function of TEL P/N 2L10-250520-11.
  • A single ESCT reference (ES7099-059) to simplify reordering and inventory control.
  • A typical lead time of 4-5 weeks to support planned consumable replenishment.
  • A competitive alternative to OEM-only purchasing that helps control cost of ownership.
  • Support across the wider family of TEL etch consumables to consolidate the spares supply chain.

Frequently asked questions

What exactly is the CL380-364-0.5 (PH) V2 part?

It is a high-purity silicon cathode electrode for TEL 300 mm plasma etch chambers. It is the RF-driven electrode surface that strikes and sustains the plasma, contributes silicon to the etch chemistry and, where configured, distributes process gas across the wafer.

Is this an original TEL OEM part?

No. This is a 2nd source, new part supplied by ESCT Fab Support. It is not an original OEM part and is not sold as such; it is a new, OEM-compatible electrode verified to match the form, fit and function of TEL P/N 2L10-250520-11.

Why is the silicon purity so important?

Because the electrode is consumed during etching, its silicon enters the chamber environment and the wafer’s near-surface region. High purity minimises metallic and mobile-ion contamination and keeps the silicon-loading contribution to plasma chemistry stable and predictable.

How do I know when the cathode needs replacing?

Replacement is usually driven by accumulated RF hours or wafer count against the qualified consumable life, supported by trends in etch rate, uniformity and particle data. Visible thinning, cracking, enlarged perforations or rising defectivity are clear indicators to schedule a change.

What does the V2 designation mean?

V2 identifies a specific revision of the electrode geometry and configuration. It is important to match the revision used in your chamber, as differences in features or dimensions can affect plasma behaviour and process matching. Confirm your installed configuration before ordering.

What is the lead time and how should I plan stock?

The typical lead time is 4-5 weeks. Because the cathode is a scheduled consumable, we recommend holding qualified spares aligned to your replacement interval so that a planned change never has to wait on procurement.

Summary

The CL380-364-0.5 (PH) V2 silicon cathode (TEL OEM P/N 2L10-250520-11, ESCT P/N ES7099-059) is a critical RF electrode consumable for TEL 300 mm plasma etch chambers. It couples power into the plasma, contributes silicon to the etch chemistry and helps shape gas and ion distribution across the wafer, directly influencing etch uniformity, critical-dimension control and particle performance. Erosion, cracking and feature wear make it a scheduled-replacement item, and ESCT Fab Support supplies it as a new, OEM-compatible electrode verified to form, fit and function, with a typical 4-5 week lead time to support proactive spares planning.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250520-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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