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The TEL focus ring designated 360-298.1-T12.6D is an annular plasma-confinement consumable that surrounds the 300 mm wafer at the outer edge of a Tokyo Electron etch process chamber. Manufactured to Tokyo Electron drawing reference 2L10-252407-11 and supplied by ESCT Fab Support under part number ES7099-166, it sits concentrically around the electrostatic chuck (ESC) and wafer perimeter, where it physically and electrically extends the active process surface beyond the silicon edge. The numeric tail of the part name reflects its dimensional family, a 360 mm-class outer envelope with a 298.1 datum diameter and the T12.6D thickness/profile revision, so that the ring profile matches a specific chamber and recipe set.
In a high-density plasma etcher, the wafer does not behave like an infinitely wide surface. Near its edge, the electric field bends and the ion trajectories tilt, which would otherwise distort etch profiles in the outermost few millimetres of usable die area. The focus ring exists to correct this. By presenting a sacrificial surface at the same potential environment as the wafer, it pushes the field discontinuity outboard of the product silicon, effectively moving the edge effect off the wafer and onto the consumable itself.
Because it is directly exposed to ion bombardment and reactive plasma chemistry, the focus ring is a planned-replacement consumable rather than a fixed chamber component. Its condition has an immediate, measurable effect on edge critical dimension (CD), etch rate uniformity and particle performance, which is why disciplined ring management is a core part of TEL etch chamber maintenance.
The focus ring performs several interlinked electrical, geometric and thermal functions simultaneously. It is not merely a spacer; it is an active part of the plasma sheath geometry at the wafer edge.
Focus rings in TEL etch chambers are produced from process-matched materials selected for plasma resistance, electrical behaviour and low particle generation. Material grade and surface finish are as important as the dimensional profile, because they govern both erosion rate and how the ring couples into the RF environment.
Depending on the recipe set the chamber is qualified for, focus rings of this type are commonly machined from high-purity silicon, silicon carbide or quartz-class materials. These resist fluorine- and chlorine-based chemistries while keeping metallic and particulate contamination low.
The 298.1 datum diameter and T12.6D thickness profile are tightly toleranced because sheath geometry is extremely sensitive to ring height and inner-edge step. A ring that is even fractions of a millimetre out of profile shifts the edge field and degrades edge uniformity.
Because the focus ring governs the electrical and thermal environment of the outermost annulus of the wafer, its condition maps directly onto edge-die yield and tool stability. A worn or mismatched ring is one of the most common root causes of edge-zone excursions in plasma etch.
The dominant wear mechanism is gradual sputter erosion of the ring surface and inner edge. As the ring thins, the sheath height at the wafer edge drops, ion tilt increases and edge CD walks away from target, the trigger for scheduled replacement before the ring reaches its erosion limit.
Thermal cycling, mishandling during preventive maintenance or non-uniform seating can crack or chip brittle silicon and ceramic rings. Fractures create localised field distortion, become particle sources and can liberate fragments onto the chuck or wafer.
Reactive by-products deposit on the ring as polymer film. If films flake during cycling or are not removed at wet clean, they release particles onto the wafer edge and can cause arcing or micro-masking, degrading both yield and defect performance.
Focus ring replacement is a routine but precision preventive-maintenance task. Always follow the applicable Tokyo Electron service procedure and your fab’s PM specification; the steps below summarise good practice.
Focus rings are high-turnover consumables, so availability and consistency matter as much as unit cost. ESCT Fab Support supplies ES7099-166 as a form-, fit- and function-matched alternative to the OEM ring, helping fabs control consumable spend without compromising edge performance.
It surrounds the 300 mm wafer at the edge of the etch chamber and extends the plasma sheath beyond the wafer perimeter. This keeps ion trajectories vertical and the field uniform across the outermost dies, so edge etch profiles and edge CD match the rest of the wafer.
No. ES7099-166 is supplied as a brand-new, second-source, OEM-compatible focus ring. It is manufactured to match TEL drawing reference 2L10-252407-11 to form, fit and function, but it is not an original Tokyo Electron branded part and carries no OEM affiliation.
Rings are replaced on an RF-hours or wafer-count interval set by your PM specification, and sooner if edge CD, edge etch rate or particle counts drift, or if visible erosion, cracking or chipping is found during inspection. Always replace before the ring reaches its erosion limit.
Yes. As the ring erodes, the edge sheath collapses inward and ion incidence tilts, degrading the outermost dies first. Because die density is high at the wafer perimeter, edge-zone excursions caused by a worn ring are a disproportionately expensive yield loss.
This part is supplied new from a second source with a typical lead time of 4-5 weeks. We recommend holding buffer stock aligned to your PM cadence so that scheduled ring changes are never gated by procurement.
Handle only with clean, powder-free gloves and approved tooling, as silicon and ceramic rings are brittle and contamination-sensitive. Keep the part in its original protective packaging until installation, and avoid edge impacts that could chip the inner step or seating face.
The TEL focus ring 360-298.1-T12.6D (OEM P/N 2L10-252407-11), supplied by ESCT Fab Support as ES7099-166, is a precision plasma-confinement consumable for Tokyo Electron 300 mm etch chambers. It shapes the edge sheath, stabilises edge CD and etch uniformity, manages RF coupling at the wafer perimeter and protects underlying chamber hardware. Because it erodes in service, profile-accurate, material-matched replacement on a disciplined PM schedule drives edge-die yield and stable chamber matching. Offered as a new second-source part with a 4-5 week lead time, it lets fabs maintain edge performance while controlling consumable cost.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252407-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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