2L10-357010-11
FOCUS RING, 360-310-T3.4

TEL focus ring 360-310-T3.4 (OEM P/N 2L10-357010-11), edge confinement consumable for TEL 300 mm plasma etch systems

ESCT P/N ES7099-203, second-source focus ring for Tokyo Electron 300 mm dielectric and conductor etch chambers

The TEL focus ring identified by the descriptor 360-310-T3.4 is an annular plasma-confinement consumable that seats concentrically around the 300 mm wafer on the lower electrode of a Tokyo Electron plasma etch chamber. Its job is deceptively simple in appearance but critical in practice: it extends the effective electrical and plasma boundary of the chuck out past the silicon edge so that the sheath, the ion flux and the etch rate seen by the outermost few millimetres of the wafer mirror what the device features at the centre experience. The dimensional shorthand in the name, a nominal 360 outer reference, a 310 inner aperture matched to the wafer perimeter, and a T3.4 thickness or step designation, reflects how tightly this part is toleranced to a specific chamber and process recipe.

In a TEL 300 mm etcher the focus ring is one of the most frequently replaced components in the process kit. It sits in the high-energy region where RF-driven ions strike the surface continuously, so it erodes by design, sacrificing itself to protect the electrostatic chuck and to keep the plasma sheath shaped correctly over the wafer edge. As the ring thins and its profile changes, edge etch behaviour drifts, which is why fabs schedule its replacement against wafer counts or measurable edge yield trends rather than waiting for catastrophic failure.

This listing covers a second-source, brand-new focus ring built to match the form, fit and function of TEL OEM part number 2L10-357010-11. It is intended as a drop-in process-kit consumable for the chamber position the original ring occupies, supplied with a typical lead time of 4-5 weeks.

Functional role of the focus ring in TEL 300 mm etch platforms

The focus ring is an active participant in plasma shaping, not merely a mechanical spacer. Positioned at the boundary between the biased wafer and the grounded chamber surroundings, it determines how cleanly the plasma sheath transitions from over the wafer to over the surrounding hardware. The principal functions it performs include:

• Extending the plasma sheath radially beyond the wafer edge so that ion trajectories at the perimeter stay vertical and the etch front does not tilt or taper.
• Maintaining edge-to-centre etch rate and critical-dimension uniformity across the full 300 mm field, including the outermost exclusion-zone dies.
• Confining and stabilising the plasma at the chamber periphery, reducing field non-uniformity and arcing near the wafer rim.
• Shielding the electrostatic chuck and its sealing surfaces from direct ion bombardment, prolonging the service life of far more expensive chuck hardware.
• Providing a controlled, consistent material surface around the wafer so that by-product chemistry and re-deposition at the edge remain repeatable.
• Helping to define the RF return path and electrical termination at the wafer edge, contributing to a stable, symmetric discharge.

Material and process performance

Material selection and plasma resistance

Focus rings for 300 mm etch service are produced from materials chosen to match the chamber chemistry and to erode predictably without contaminating the wafer. The material set used for this class of ring is matched to the OEM specification so that electrical and chemical behaviour stays within process limits.

• Etch-compatible ring materials such as high-purity silicon, silicon carbide or quartz are selected to suit fluorine- or chlorine-based chemistries and to minimise metallic and particulate contamination.
• Bulk resistivity and dielectric properties are controlled so the ring couples RF correctly and shapes the sheath as the recipe intends.
• Surface finish and edge geometry are held to the OEM profile so erosion proceeds evenly rather than producing localised hot spots.
• Material purity limits trace contaminants that could transfer to the wafer edge and degrade device yield.

Dimensional and thermal stability

Because the ring sits in direct thermal and electrical contact with the lower electrode, its dimensions and seating must remain stable across thousands of RF cycles and temperature excursions.

• The inner aperture and step height are toleranced to keep the wafer edge correctly positioned relative to the sheath boundary.
• Flatness and seating contact maintain uniform thermal conduction to the chuck, avoiding edge temperature gradients that skew etch rate.
• The thickness designation in the part descriptor is matched so the new ring presents the correct starting profile to the plasma at install.
• Dimensional consistency from ring to ring keeps edge process behaviour repeatable across replacement cycles.

Impact on tool performance and yield

Few consumables have as direct a line to edge yield as the focus ring. A worn, mismatched or incorrectly seated ring shows up immediately in edge metrology, and the financial impact compounds because the affected dies sit on every wafer that runs through the chamber. The consequences of running with a degraded ring include:

• Edge critical-dimension drift and tilted or tapered etch profiles in the outer dies, leading to parametric failures.
• Loss of edge-to-centre etch rate uniformity, narrowing the usable process window across the wafer.
• Increased particle counts as the eroded ring sheds material, raising defect-driven yield loss.
• Localised arcing or plasma instability at the wafer rim that can damage the wafer or chamber hardware.
• Shorter electrostatic chuck life if the ring no longer shields it adequately from ion bombardment.
• Unplanned downtime and recipe re-qualification if edge excursions are caught late rather than managed on a planned replacement schedule.

Common wear and failure modes

Erosion and thinning

The dominant wear mechanism is steady erosion under ion bombardment. The ring thins and its top profile recedes over time, which lowers the local sheath and progressively tilts ion trajectories at the wafer edge. This is the expected end of life and is the reason the focus ring is treated as a scheduled consumable tracked against RF hours or wafer count.

Cracking and chipping

Thermal cycling, mechanical handling during preventive maintenance, and stress concentrations as the ring thins can produce cracks or chips. A fractured ring generates particles and can disturb the local electric field, so any sign of cracking warrants immediate replacement rather than continued use.

Surface roughening, deposition and seating faults

Polymer and by-product build-up, surface roughening and flaking change the ring’s effective surface chemistry and can shed particles onto the wafer. Poor seating, from debris under the ring or a warped contact face, degrades thermal and electrical contact, creating edge non-uniformity even on a ring that is not yet fully eroded.

Installation and replacement guidance

Focus ring replacement is a routine but contamination-sensitive operation. Follow the TEL chamber maintenance procedure and your fab’s safety protocols; the steps below summarise the typical sequence.

• Vent the chamber, confirm RF and gas isolation, and allow the lower electrode assembly to cool to a safe handling temperature.
• Remove the worn focus ring carefully, noting its orientation, and inspect it to characterise the wear pattern for process records.
• Clean the seating surface and surrounding kit, removing all polymer, particles and debris that could interfere with seating or thermal contact.
• Unpack the new ring in a clean environment, handle it with gloves or clean tooling, and inspect it for chips or cracks before fitting.
• Seat the new ring in the correct orientation, confirming it sits flat and concentric with no rock or gap against the contact face.
• Reassemble the chamber, pump down and run the prescribed seasoning, leak-check and recipe-verification steps before production.
• Reset the consumable counter and confirm edge metrology is back within specification on the first qualification wafers.

Spare parts strategy for TEL etch process kits

Because the focus ring is a high-turnover consumable, sourcing it reliably and economically has a direct effect on cost of ownership and tool availability. ESCT Fab Support offers this part as a qualified second-source alternative with several advantages for fabs managing TEL etch fleets:

• Brand-new, second-source parts verified to the form, fit and function of OEM P/N 2L10-357010-11.
• Cost-effective alternative to OEM list pricing on a part that is consumed and replaced frequently.
• A predictable 4-5 week lead time that supports planned preventive-maintenance scheduling and buffer-stock policies.
• Referenced by ESCT P/N ES7099-203 for straightforward reordering and inventory control.
• Supports second-source qualification strategies that reduce single-supplier risk on critical process consumables.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the 300 mm wafer on the lower electrode and extends the plasma sheath and electrical boundary past the wafer edge, keeping ion trajectories vertical and edge etch uniformity consistent with the centre of the wafer. It also shields the electrostatic chuck from direct ion bombardment.

Is this an original TEL OEM part?

No. This is a brand-new, second-source part built to match the form, fit and function of TEL OEM P/N 2L10-357010-11. It is not an original OEM-branded component, but it is intended as a direct, compatible replacement for the same chamber position.

How often does a focus ring need to be replaced?

Replacement intervals depend on the chemistry, RF power and recipe, so fabs typically track the ring against wafer count or RF hours and replace it when edge metrology begins to drift. Because the ring erodes by design, it is treated as a scheduled consumable rather than a fix-on-fail item.

What does the 360-310-T3.4 designation refer to?

It is a dimensional shorthand describing the ring geometry, a nominal outer reference, an inner aperture matched to the wafer perimeter, and a thickness or step designation. These dimensions are matched to the OEM specification so the new ring presents the correct profile to the plasma on installation.

Will fitting this ring affect my process qualification?

Any focus ring change is a process-kit event, so the standard practice is to season the chamber and run recipe-verification and edge-metrology wafers after installation. Because this part is matched to the OEM form, fit and function, it is designed to return edge behaviour to specification within the normal qualification routine.

What is the lead time and how do I reorder?

The typical lead time is 4-5 weeks, which suits planned preventive-maintenance scheduling and buffer-stock policies. Reorder using ESCT P/N ES7099-203, which references this specific second-source focus ring for consistent inventory control.

Summary

The TEL focus ring 360-310-T3.4 (OEM P/N 2L10-357010-11, ESCT P/N ES7099-203) is a plasma-confinement consumable that governs edge etch uniformity, sheath shaping and chuck protection in TEL 300 mm plasma etch chambers. As a high-turnover sacrificial part, its condition feeds directly into edge yield, particle performance and tool availability, which makes reliable, cost-effective sourcing a genuine operational concern. Supplied brand new as a qualified second-source alternative with a 4-5 week lead time, this ring gives fabs a dependable, economical option for keeping TEL etch tools running within their established edge-process windows.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-357010-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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