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The Shield Protection Ring (OEM P/N 3D10-350067-11) is a chamber consumable used in Tokyo Electron 300 mm plasma etch process chambers, where it forms part of the protective shielding that surrounds the wafer and the active plasma region. The “shield” designation indicates that the ring’s primary purpose is to protect adjacent, higher-value chamber hardware (the upper electrode assembly, liner surfaces and grounded chamber walls) from direct ion bombardment, radical attack and the deposition of etch by-products. As a sacrificial protective component, it is designed to absorb the damage that would otherwise accumulate on parts that are far slower and more costly to replace.
The “(GRINDING)” qualifier in the part name refers to the surface finish specification of the ring rather than a separate function. The sealing or seating faces, and frequently the plasma-facing surface, are precision ground to a controlled flatness and roughness so that the ring beds correctly against its mating hardware, maintains a repeatable ground reference, and presents a predictable surface to the plasma. This ground finish is integral to the part: it governs how well the ring confines the discharge, how it manages particle generation, and how consistently it returns RF current to ground.
Because it sits in the immediate vicinity of the wafer edge and the plasma sheath, the Shield Protection Ring directly influences edge etch uniformity, plasma confinement and particle performance. A worn, cracked or contaminated ring is one of the more common drivers of edge yield loss and unscheduled chamber downtime, which is why a verified, form-fit-function replacement such as ES7099-106 is a sensible item to hold in the consumable inventory for any TEL etch fleet.
Within the process chamber, the Shield Protection Ring performs several overlapping duties simultaneously. It is not a single-purpose seal or spacer; it is a shaped, finish-critical part that shapes the plasma, protects neighbouring hardware and helps maintain electrical continuity. Its key functions include the following.
As a plasma-exposed protective consumable, the value of this ring lies in how its material and finish withstand the chemical and physical loads of an etch chamber while holding tight dimensional tolerances. Two characteristics dominate its in-chamber performance: resistance to the etch environment and the precision of its ground surfaces.
The ring must endure continuous exposure to energetic ions and aggressive process chemistries (fluorine-, chlorine- and bromine-bearing species among them) without rapid erosion, flaking or excessive particle shedding. The material selected for a shield protection ring is chosen for chemical inertness, sputter resistance and clean wear behaviour, so that as it slowly erodes it does so predictably rather than generating sudden defect excursions.
The ground surfaces are what make this specific part variant distinct. Controlled flatness, parallelism and surface roughness on the sealing and plasma-facing faces let the ring bed without gaps, maintain uniform electrical contact and presents a smooth surface that does not concentrate field or trap excessive residue.
Although it is an inexpensive part relative to the electrodes and liners it protects, the condition of the Shield Protection Ring has an outsized influence on process results. A ring that is within specification keeps the chamber matched and stable; one that has drifted out of specification quietly degrades yield and pushes up cost of ownership.
Like all plasma-facing consumables, the Shield Protection Ring is expected to wear; the engineering objective is to replace it on a predictable cadence before its degradation reaches the wafer. Three failure modes account for the majority of removals.
Continuous ion bombardment and chemical etching gradually remove material from the plasma-facing surface, thinning the ring and altering its profile. As the geometry changes, the local plasma sheath and edge etch behaviour shift, eventually pushing edge uniformity outside the process window even though the ring is still physically present.
Repeated thermal cycling, mechanical stress during handling, and localised hot spots can initiate cracks or edge chips. These create immediate particle sources and can compromise the seating of the ground faces, degrading both defect performance and RF return-path integrity.
Etch by-products and polymer films accumulate on the ring over many wafers. When this build-up flakes or delaminates, it releases particles onto the wafer and can disrupt the ground contact at the sealing faces, so a ring may need replacement on contamination grounds well before it is fully eroded.
Replacement should always follow the relevant TEL maintenance procedure for the specific chamber and process module, performed by trained personnel with the tool in a safe, powered-down and vented state. The following sequence describes the general best-practice approach.
Plasma-facing rings are scheduled wear items, so the question is never whether they will need replacing but how reliably and cost-effectively they can be sourced. Stocking a verified, compatible alternative such as ES7099-106 alongside OEM parts protects the fleet against single-source supply risk and long lead times. ESCT Fab Support offers the following advantages.
It is a sacrificial protective ring that sits near the wafer edge and plasma region in a TEL 300 mm etch chamber. It shields adjacent electrode, liner and wall surfaces from ion bombardment and chemical attack, helps confine and shape the plasma, and provides a stable ground reference at the chamber periphery.
No. This is supplied as a new, OEM-compatible second-source part. It is not an original Tokyo Electron component, but it is verified to match the original part’s form, fit and function, including the ground surface finish, so that it performs as a direct replacement.
It refers to the precision ground surface finish of the ring rather than a separate function. The sealing and plasma-facing faces are ground to controlled flatness and roughness so that the ring seats correctly, maintains consistent electrical contact and presents a predictable surface to the plasma.
Replacement interval depends on the specific process, RF power, chemistry and run hours, so it is defined by each fab’s preventive-maintenance data. As a sacrificial consumable it is replaced on a scheduled cadence, and earlier if particle checks, edge-uniformity drift or visible erosion indicate it has reached end of life.
Match against OEM P/N 3D10-350067-11 and ESCT P/N ES7099-106. Because TEL etch platforms have many chamber configurations, we recommend confirming the part against your specific tool and chamber bill of materials before ordering to confirm full compatibility.
The current lead time is 4-5 weeks. Because this is a wear item consumed on a predictable schedule, we recommend planning buffer stock around this lead time so that replacements are always available for scheduled maintenance.
The Shield Protection Ring (OEM P/N 3D10-350067-11, ESCT P/N ES7099-106) is a precision-ground, plasma-facing consumable for Tokyo Electron 300 mm etch chambers. It protects high-value electrode, liner and wall hardware, helps confine the plasma, and maintains a clean ground reference at the wafer edge, all functions that directly affect edge etch uniformity, particle performance and tool availability. Supplied as a new, OEM-compatible second-source part with a 4-5 week lead time, ES7099-106 is a cost-effective, supply-resilient choice for keeping TEL etch chambers within specification.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-350067-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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