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The F-8SO-SI-260-4A is a silicon focus ring used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. As the “SI” designation in its part name indicates, it is machined from high-purity silicon rather than from quartz or a ceramic, which places it directly in the family of consumable edge-ring hardware that surrounds the production wafer at the outer edge of the electrostatic chuck. The numeric “260” element is consistent with the ring geometry sized to encircle the 300 mm wafer pocket, and the “4A” revision suffix denotes a specific dimensional and material configuration validated for a particular etch application.
Within the chamber, the focus ring sits concentrically around the wafer, level with or marginally above the wafer plane. Its job is to extend the plasma sheath and the RF field outward beyond the wafer edge so that the reactive ions arriving at the outermost die strike the surface with the same trajectory and energy that they do at the wafer centre. Without a correctly conditioned silicon focus ring, the sheath would bend sharply at the wafer perimeter, distorting ion incidence angles and degrading the etch profile across the outer few millimetres of every wafer.
Because the focus ring is made of silicon, it is chemically and electrically matched to the wafer it protects. It erodes at a controlled, predictable rate, presents the same surface chemistry to the plasma as the wafer itself, and avoids introducing foreign species that would otherwise compromise device integrity. This makes the F-8SO-SI-260-4A a genuine process-critical consumable rather than a passive mechanical fixture, and its condition has a direct, measurable bearing on edge yield.
The focus ring performs several intertwined electrical, plasma-physical and mechanical functions simultaneously. In a TEL 300 mm etch chamber it is one of the principal levers governing edge-to-centre etch uniformity, and its specification is tuned against the rest of the chamber consumable set.
The performance of the F-8SO-SI-260-4A depends first on the purity and structural quality of the silicon from which it is machined. The silicon has to be high-resistivity and low in metallic contamination because any metallic impurity liberated under ion bombardment becomes a potential source of device-killing contamination on the wafer.
The ring’s inner diameter, outer diameter, step height and flatness are all tightly toleranced, because the height of the ring relative to the wafer surface directly shapes the sheath at the edge. As the silicon erodes, that height falls, which is why erosion rate and uniformity are as important as the as-new geometry.
Because the focus ring controls the etch environment over the outermost annulus of the wafer, precisely the region where many fabs already fight for edge yield, its condition propagates straight through to electrical results and to chamber availability.
The dominant wear mechanism is steady physical and chemical erosion of the silicon under ion bombardment. As the ring thins, its top surface drops below the design plane, the edge sheath relaxes and edge etch profiles begin to tilt. This is a normal end-of-life condition and is the primary reason the F-8SO-SI-260-4A is scheduled as a consumable.
Silicon is brittle, so thermal cycling, mechanical mishandling during installation, or localised RF arcing can initiate cracks and chips. These defects shed particles onto the wafer, create local field perturbations, and in severe cases expose the hardware beneath the ring to the plasma. Any visible crack or chip warrants immediate removal.
In polymer-forming etch chemistries, deposits can accumulate on the ring surface and flake during subsequent cycles, contributing to particle counts and altering the local surface chemistry. Uneven deposition or back-side contamination can also lift the ring slightly, disturbing the seating plane and the thermal contact that stabilises edge temperature.
Replacement should follow the TEL maintenance procedure for the specific chamber and recipe set. The sequence below summarises good practice for handling a brittle silicon edge consumable; always defer to the tool’s own documentation and your fab’s qualified work instructions.
Silicon focus rings are scheduled, recurring consumables, so a reliable supply with a known lead time keeps etch chambers in production. ESCT Fab Support stocks and sources the F-8SO-SI-260-4A under ESCT P/N ES7099-164 with a typical lead time of 4–5 weeks, allowing fabs to plan replacement intervals around predictable availability.
It is a high-purity silicon focus ring for TEL 300 mm plasma etch chambers. It encircles the wafer at the edge of the electrostatic chuck and shapes the plasma sheath outward past the wafer perimeter, so that ion bombardment stays vertical and uniform at the outermost dies and edge etch results match the wafer centre.
No. This item is supplied as a new, second-source OEM-compatible part. It is verified to the form, fit and function of the original consumable referenced by OEM P/N 1D10-310019-M3, but it is not an original Tokyo Electron OEM part and is not represented as such.
Silicon is chemically and electrically matched to the wafer it surrounds. It presents the same surface chemistry to the plasma, erodes at a predictable rate, and avoids introducing foreign species. This keeps the etch environment continuous across the wafer boundary and minimises contamination risk at the wafer edge.
The usual indicators are measurable height loss from erosion, drift in edge etch-rate uniformity or critical dimensions on perimeter dies, rising particle counts, and any visible cracking or chipping. Most fabs combine an RF-hour or wafer-count life limit with periodic in-situ measurement and monitor-wafer checks.
The typical lead time is 4–5 weeks. Because focus rings are recurring consumables with a fairly predictable life, fabs usually hold a buffer stock sized to their replacement interval and reorder against the quoted lead time to avoid any gap in chamber availability.
After fitting a new ring it is standard practice to run a seasoning or burn-in recipe to condition the fresh silicon surface, then verify edge etch-rate uniformity and particle performance on monitor wafers before returning the chamber to production. Always follow your fab’s qualified requalification procedure for the affected recipes.
The F-8SO-SI-260-4A silicon focus ring (OEM P/N 1D10-310019-M3, ESCT P/N ES7099-164) is a process-critical edge consumable for TEL 300 mm plasma etch chambers. By extending the plasma sheath and RF field past the wafer edge with a silicon surface matched to the wafer, it preserves vertical ion incidence, edge etch uniformity and low particle counts across the outermost dies. As a scheduled wear item subject to erosion, cracking and polymer build-up, it benefits from disciplined replacement and a dependable second-source supply. ESCT Fab Support offers it as a high-purity, form-fit-function-verified part with a predictable 4–5 week lead time to keep your etch chambers matched and in production.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-310019-M3. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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