2L10-252482-11
RING,F-SI-D380D297.0-T3.4S-MF

Silicon focus ring, 380 mm OD × 297 mm ID (OEM P/N 2L10-252482-11), edge-confinement consumable for TEL 300 mm plasma etch systems

ESCT P/N ES7099-121 | TEL OEM P/N 2L10-252482-11 | Type: Focus Ring | 2nd Source NEW

The component supplied under ESCT P/N ES7099-121 is a single-crystal silicon focus ring engineered for Tokyo Electron (TEL) 300 mm plasma etch process chambers. The part designation, F-SI-D380D297.0-T3.4S-MF, encodes its geometry and material: a silicon (SI) focus ring (F) with an approximate 380 mm outer diameter, a 297.0 mm inner diameter that frames the 300 mm wafer, and a nominal 3.4 mm body thickness, finished to a controlled machined-face (MF) surface specification. It is an annular consumable that sits within the electrostatic chuck assembly, encircling the wafer edge directly in the path of the plasma.

In a 300 mm etcher, the wafer edge is the single most difficult zone to control. Without a sacrificial ring surrounding it, the plasma sheath would bend sharply at the wafer perimeter, distorting ion trajectories and starving the outermost dies of process uniformity. The focus ring closes that discontinuity. By presenting a silicon surface at the same potential and roughly the same height as the wafer, it extends the plasma envelope outward so that the sheath crosses the wafer edge as if the wafer were larger than it physically is.

Because it is consumed by the same fluorine- and oxygen-bearing chemistries and ion bombardment that drive the etch, the focus ring is a planned-replacement item with a finite service life. Its erosion profile directly couples to edge critical-dimension (CD) drift, making it one of the highest-value consumables in the chamber kit. This part is offered as a second-source, brand-new alternative verified to the form, fit and function of the TEL original, with a typical lead time of 4–5 weeks.

Functional role of the focus ring in TEL plasma etch platforms

Positioned concentrically around the 300 mm wafer on the electrostatic chuck, this silicon focus ring performs several inter-related electrical and process functions that determine edge-die yield:

• Extends the RF plasma sheath beyond the physical wafer edge so that ion flux and incidence angle at the outermost dies match those at wafer centre.
• Confines and shapes the plasma above the chuck, minimising sheath bending and the resulting edge tilt of etched features.
• Provides a silicon surface chemically equivalent to the wafer, so reaction by-products and loading behaviour at the edge mirror the bulk etch rather than introducing a foreign material into the chemistry.
• Acts as a sacrificial barrier that protects the underlying chuck, edge electrode and ceramic insulators from direct ion erosion.
• Contributes to the RF return path and local impedance environment at the wafer perimeter, stabilising the edge plasma potential.
• Maintains a consistent height step relative to the wafer surface, controlling the gas-flow and sheath geometry that govern edge etch uniformity.

Material and process performance

Silicon purity and erosion behaviour

High-resistivity single-crystal silicon is the material of choice for this class of focus ring because it etches in the same fluorocarbon and oxygen plasmas as the wafer, producing volatile by-products rather than non-volatile metallic contaminants. Purity and resistivity are tightly specified so the ring does not become a defect or metals source as it thins.

• Controlled bulk resistivity to match the RF coupling behaviour assumed by the chamber recipe.
• Low trace-metal content to avoid edge contamination and mobile-ion defects.
• Predictable, uniform erosion so that the height step changes gradually and recipe compensation remains stable across the ring’s life.

Dimensional and surface accuracy

The 380 mm OD, 297 mm ID and 3.4 mm thickness must be held to fine tolerances, because the seating plane and inner-bore concentricity directly set how the ring registers around the wafer. The machined-face finish controls both seating contact and the way the silicon erodes under ion flux.

• Flatness and parallelism of the seating face to maintain even RF and thermal contact with the chuck.
• Inner-bore tolerance and concentricity that hold a uniform annular gap around the 300 mm wafer.
• Consistent thickness so the initial wafer-to-ring height step is repeatable from one ring to the next.

Impact on tool performance and yield

As an edge-confinement consumable, this focus ring exerts an outsized influence on the dies that occupy the wafer perimeter, precisely the region where yield is most fragile. Its condition propagates into several measurable outcomes:

• Edge critical-dimension uniformity and the radial CD signature across the wafer.
• Sidewall angle and feature tilt at the outermost dies as the ring height recedes.
• Edge etch-rate and etch-depth control, and the width of the usable edge-exclusion zone.
• Particle and defect performance, since a worn or cracked ring sheds silicon debris onto the wafer.
• Tool-to-tool matching across a fleet, where inconsistent ring wear shows up as edge-yield variance between chambers.

Common wear and failure modes

Erosion and height loss

The dominant wear mechanism is steady ion-driven erosion of the upper surface, which lowers the wafer-to-ring height step over time. As the step changes, the edge sheath geometry shifts, edge CD drifts and feature tilt increases. Once erosion moves the process outside its compensation window, the ring has reached end of life and must be replaced.

Cracking and chipping

Single-crystal silicon is brittle and intolerant of point loading and thermal shock. Mishandling during a wet-clean, an uneven seat, or thermal cycling can initiate cracks or edge chips. A fractured ring is an immediate particle source and can compromise the RF and thermal contact it relies on, so any visible crack warrants removal from service.

Deposition build-up and backside contamination

Polymer and etch by-products accumulate on the ring and on the seating interface. Build-up on the backside or seat degrades thermal and electrical contact, while flaking deposits on the top face generate defects. Contaminated or warped seating surfaces also disturb the height step and the local plasma potential.

Installation and replacement guidance

Focus-ring replacement is a routine preventive-maintenance activity, but the brittleness of silicon and the sensitivity of the edge process demand a disciplined procedure. The following sequence reflects general best practice for TEL 300 mm etch chambers; always defer to the specific maintenance documentation for your platform and recipe.

• Vent the chamber and follow full lock-out/tag-out and RF-isolation procedures before opening the lid; allow components to cool.
• Remove the worn focus ring carefully, supporting it evenly and avoiding any prying that could chip the silicon or scratch the chuck.
• Clean and inspect the seating surface, removing accumulated deposits and confirming the chuck and edge electrode are free of damage.
• Unpack the new ring in a clean environment and handle only with clean, lint-free gloves; inspect for any transit cracks or chips.
• Seat the new ring concentrically so it registers fully and flat against its locating surface, with no rocking or gap.
• Close the chamber, pump down, leak-check and run the prescribed plasma season/conditioning recipe before production.
• Reset or update consumable life counters and verify edge CD and uniformity on a qualification wafer before releasing the tool.

Spare parts strategy for TEL etch consumables

Because focus rings are consumed on a predictable schedule, they are ideal candidates for a planned second-source supply strategy that protects tool availability without inflating inventory cost. ESCT Fab Support offers ES7099-121 as part of a broader TEL consumables programme with the following advantages:

• Brand-new, second-source parts verified to the form, fit and function of TEL P/N 2L10-252482-11.
• Competitive pricing against single-source OEM consumables, reducing cost per wafer at the chamber edge.
• A defined 4–5 week lead time that supports scheduled PM planning and safety-stock management.
• Controlled silicon material and dimensional specifications for consistent, repeatable wear behaviour.
• Supply support across the wider family of TEL etch focus rings, edge rings and electrode consumables.

Frequently asked questions

What does this part do in the chamber?

It is a silicon focus ring that surrounds the 300 mm wafer on the electrostatic chuck. By extending the plasma sheath beyond the wafer edge, it keeps ion flux and angle uniform at the outermost dies, protecting edge critical-dimension control and edge-die yield.

Is this an original TEL OEM part?

No. This is a second-source, brand-new component, not an original TEL part. It is manufactured and verified to the form, fit and function of TEL OEM P/N 2L10-252482-11 and is intended as a compatible replacement for that consumable.

What material is the ring made from?

It is made from high-purity single-crystal silicon, the same material class as the wafer it surrounds. This means the ring etches with volatile by-products in the same chemistry rather than introducing foreign contaminants into the edge process.

How do I know when it needs replacing?

Replacement is typically driven by erosion-induced height loss that pushes edge CD and uniformity outside the recipe compensation window, or by any cracking, chipping or heavy deposition. Most fabs schedule replacement against an RF-hour or wafer-count consumable limit confirmed by edge-yield monitoring.

What are the key dimensions?

The ring has an approximate 380 mm outer diameter, a 297 mm inner diameter that frames the 300 mm wafer, and a nominal 3.4 mm body thickness, with a controlled machined-face finish. These dimensions match the OEM specification to maintain the correct wafer-to-ring height step.

What is the lead time?

The typical lead time for ES7099-121 is 4–5 weeks. Because focus rings are scheduled consumables, we recommend aligning orders with your preventive-maintenance cycle and holding appropriate safety stock to avoid unplanned tool downtime.

Summary

ESCT P/N ES7099-121 is a high-purity single-crystal silicon focus ring (approximately 380 mm OD, 297 mm ID and 3.4 mm thick) for TEL 300 mm plasma etch chambers, supplied as a second-source replacement for TEL OEM P/N 2L10-252482-11. Sitting around the wafer on the electrostatic chuck, it extends and confines the plasma sheath at the wafer edge to preserve edge CD uniformity, sidewall control and particle performance. As a planned-replacement consumable subject to erosion, cracking and deposition, it benefits from a disciplined PM and inspection routine and from a reliable second-source supply that keeps cost per wafer down while protecting tool availability.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252482-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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