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The Silicon Protection Ring, identified internally as TE-RP470 and supplied by ESCT Fab Support under part number ES7099-066, is a consumable shield ring used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. The “SI-SHIN” designation reflects its role as a silicon protective member, a sacrificial barrier that surrounds the wafer-edge hardware and shields the more permanent chamber assemblies from direct plasma exposure and ion bombardment. It sits in the outer wafer-edge region of the chamber, concentric with the focus ring and the electrostatic chuck, where the plasma sheath terminates and the most aggressive etch chemistry concentrates.
In a plasma etch chamber, the area immediately beyond the wafer is one of the harshest electrochemical environments inside the tool. Reactive fluorine, chlorine and bromine species, combined with energetic ion flux, attack any exposed surface. The protection ring is engineered to absorb this attack on behalf of costlier, slower-to-replace components such as the cathode body, insulator rings and RF-bearing hardware. Because it is a planned consumable, the protection ring is designed to erode in a controlled, predictable manner so that it, rather than the underlying chamber, becomes the item that is periodically swapped out.
Its geometry, surface finish and material grade are not incidental. They directly influence how the plasma sheath bends at the wafer edge, how cleanly by-products are pumped away and how few particles are shed back onto the wafer. For this reason the protection ring is treated as a critical process-control consumable rather than a generic mechanical cover, and its condition is tracked against wafer-count and RF-hour limits.
Within the TEL chamber stack, the protection ring performs several overlapping duties that together preserve both process repeatability and the service life of the surrounding hardware:
As a silicon-based protection member, this ring is matched to the etch chemistry it must survive. Material selection governs etch rate, by-product chemistry and the cleanliness of the surface as it ages.
Form, fit and surface finish are held to tight tolerances so that the ring seats correctly and presents the intended profile to the plasma from the first wafer onward.
Because the protection ring sits exactly where edge effects originate, its condition propagates directly into device yield and tool availability. A worn or incorrectly specified ring can undermine an otherwise stable process:
The primary, expected failure mode is gradual erosion. Continuous ion bombardment and chemical etch thin the ring and round its features over time, slowly altering the edge sheath until the part falls outside its dimensional limit and must be replaced.
As erosion progresses unevenly, the surface roughens and micro-features develop. These sites shed particles and can flake, producing defect adders on the wafer and triggering particle excursions well before the ring is fully consumed.
Silicon is brittle, so thermal cycling, mishandling during PM, or poor seating can initiate cracks and edge chips. A cracked ring loses its protective continuity and may expose underlying hardware or introduce loose debris into the chamber.
Replacement is normally carried out during a scheduled preventive-maintenance window by a trained technician. The following sequence reflects general best practice; always defer to your site’s documented TEL procedure and safety rules:
Protection rings are recurring consumables, so a reliable, cost-effective supply directly affects cost-per-wafer and tool uptime. Sourcing ES7099-066 through ESCT Fab Support gives fabs a dependable alternative to single-channel OEM procurement:
It acts as a sacrificial silicon shield at the wafer edge of a TEL plasma etch chamber, absorbing plasma erosion and ion bombardment so that costlier cathode, insulator and RF hardware are protected, while helping to stabilise the edge plasma sheath.
No. This is a second-source, brand-new TEL-compatible protection ring supplied by ESCT Fab Support. It is manufactured and verified to match the form, fit and function of OEM P/N 3D10-350067-11, but it is not an original Tokyo Electron OEM component.
Replacement intervals are process-specific and are usually tracked by wafer count or RF hours rather than a fixed calendar period. Most fabs swap the ring at a scheduled PM once it nears its erosion or dimensional limit; your process engineering team should set the limit against in-line particle and edge-CD data.
It is a high-purity silicon protection member, chosen so that erosion produces volatile, pump-friendly by-products and avoids introducing metallic contamination at the wafer edge.
Typical indicators include rising particle or defect counts, edge critical-dimension or etch-rate drift, and visible thinning, roughening, chipping or cracking observed during PM inspection.
The typical lead time is 4-5 weeks. Because protection rings are recurring consumables, many fabs hold a small buffer stock so that PM windows are never gated by procurement.
The Silicon Protection Ring (TE-RP470, OEM P/N 3D10-350067-11; ESCT P/N ES7099-066) is a sacrificial edge-shield consumable for Tokyo Electron 300 mm plasma etch chambers. By absorbing plasma erosion at the wafer periphery, stabilising the edge sheath and presenting a clean, low-shedding surface, it protects expensive chamber hardware while safeguarding edge etch uniformity, particle performance and yield. Treated as a tracked consumable and replaced on a planned schedule, it keeps TEL etch tools running predictably. ESCT Fab Support offers it as a competitively priced, second-source new part with a typical 4-5 week lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-350067-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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