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The focus ring identified by TEL part number 3D10-250318-11, and catalogued by ESCT Fab Support as ES7099-088, is a precision annular consumable that surrounds the 300 mm wafer inside a Tokyo Electron plasma etch process chamber. Carrying the internal descriptor AD360-298.1, it is one of the most influential single components in determining how cleanly and uniformly the outermost few millimetres of every wafer are etched. Despite its apparent simplicity as a flat ring of process-grade material, the focus ring sits at the intersection of plasma physics, electrostatics and thermal management, and its condition is monitored closely by process engineers because it directly shapes edge yield.
Mechanically, the focus ring rests on the electrostatic chuck (ESC) assembly, concentric with the wafer and immediately outboard of the wafer edge. It extends the conductive or dielectric surface beyond the silicon so that the plasma sheath does not collapse or distort abruptly at the wafer boundary. In a TEL 300 mm etch chamber, where capacitively coupled RF power drives the discharge, the focus ring effectively becomes part of the lower electrode environment, carrying RF current and helping define the electric field geometry that ions follow as they accelerate towards the wafer surface.
Because the ring is sacrificial, it erodes steadily under ion bombardment and chemical attack and must be replaced on a defined preventive-maintenance cadence. As the ring thins, the sheath profile over the wafer edge changes, ion trajectories tilt, and edge critical dimensions and etch depth begin to drift. Understanding the role of this consumable, its wear behaviour and its replacement discipline is what keeps an etch tool inside its qualified process window.
Within a Tokyo Electron 300 mm etch chamber, the focus ring performs several overlapping electrical, plasma and thermal functions simultaneously. It is not merely a spacer or a shield; it is an active participant in shaping the discharge at the wafer perimeter.
Focus rings for TEL etch chambers are manufactured from process-matched materials, most commonly high-purity silicon, silicon carbide or quartz, selected according to the chemistry the chamber runs and the erosion resistance required. The choice of material governs both the particle performance of the ring and how predictably it wears across its service life.
The ring is continuously exposed to energetic ions and reactive fluorine-, chlorine- or bromine-bearing species. Material purity and microstructure determine the rate at which the surface recedes and whether erosion proceeds smoothly or produces micro-roughening that sheds particles.
Inner diameter, ring height, step geometry and flatness are tightly toleranced because they set the gap to the wafer edge and the height of the sheath relative to the wafer surface. Small deviations translate directly into edge CD and tilt variation.
Few consumables have as direct a line to edge yield as the focus ring. As it erodes or sits out of specification, the consequences appear quickly in edge-die measurements and defect data.
The dominant wear mode is gradual recession of the ring surface under ion bombardment and chemical etching. As the ring thins, the sheath drops relative to the wafer, ion trajectories at the edge tilt, and edge CD and profile steadily degrade until the ring reaches its replacement limit.
Thermal cycling, mechanical stress during handling, and thinning of the ring near end of life can lead to cracks or edge chips. A fractured ring is a serious particle and arcing risk and may damage the wafer or the chuck if it fails in service.
Polymer and by-product films accumulate on the ring surface and can flake away as particles, while impurities in lower-grade material may be sputtered onto the wafer. Both effects raise defect counts and can disturb the local etch chemistry at the wafer edge.
Focus-ring replacement is a routine preventive-maintenance task, but it must be carried out with care to avoid particle excursions and to restore the chamber to its qualified state. The following sequence reflects general good practice; always defer to the site-specific TEL maintenance procedure.
Focus rings are high-frequency consumables, so a dependable second-source supply chain protects both uptime and operating cost. ESCT Fab Support offers ES7099-088 as a quality-controlled alternative to OEM-only procurement, with practical advantages for fab maintenance and procurement teams.
It surrounds the 300 mm wafer on the electrostatic chuck and extends the plasma sheath beyond the wafer edge, keeping ion trajectories vertical and etch results uniform across the outermost dies. It also carries RF current and protects the chuck from erosion.
No. ES7099-088 is supplied as a new 2nd-source, OEM-compatible part. It is verified to match the form, fit and function of TEL OEM P/N 3D10-250318-11, but it is not an original Tokyo Electron OEM component.
Replacement is driven by accumulated RF hours or wafer count and by the ring reaching its minimum allowable height. The exact interval depends on the chemistry and recipe; most fabs monitor edge CD and particle trends and replace the ring on a defined preventive-maintenance schedule.
Typical indicators are drifting edge critical dimensions, increasing centre-to-edge non-uniformity, tilted edge feature profiles, rising particle counts and measurable height loss against the wear limit. Any cracking or chipping requires immediate replacement.
Focus rings for TEL etch chambers are made from process-matched materials such as high-purity silicon, silicon carbide or quartz, chosen for the specific chemistry and erosion resistance required. ES7099-088 is produced to semiconductor-grade purity to match the OEM specification.
The current lead time is approximately 4-5 weeks. Because focus rings are consumed at a steady rate, we recommend holding buffer stock and ordering ahead of planned preventive-maintenance windows to avoid tool downtime.
The TEL focus ring (OEM P/N 3D10-250318-11, ESCT P/N ES7099-088) is a critical edge-confinement consumable in Tokyo Electron 300 mm plasma etch chambers. By extending the plasma sheath beyond the wafer, shaping ion trajectories at the edge and protecting the electrostatic chuck, it has a direct and measurable influence on edge critical dimensions, etch uniformity, particle performance and yield. As a sacrificial part it erodes predictably and must be replaced on a disciplined preventive-maintenance schedule with proper handling and requalification. Supplied as a new 2nd-source component verified to the OEM’s form, fit and function, ES7099-088 gives fabs a cost-effective, reliable alternative for keeping etch tools inside their qualified process window.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250318-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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