(C2)FOCUS RING,AD360-3.4-298.1

PART DETAILS

3D10-250318-11
(C2)FOCUS RING,AD360-3.4-298.1

OEM P/N: 

3D10-250318-11

ESCT P/N: 

ES7099-014

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL C2 focus ring (OEM P/N 3D10-250318-11), edge-confinement consumable for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-014, AD360-type focus ring, nominal 298.1 mm diameter, second-source NEW

The TEL C2 focus ring is a circular plasma-facing consumable that surrounds the 300 mm wafer inside the lower electrode assembly of a Tokyo Electron etch chamber. Carrying the designation AD360-3.4-298.1, it is a precision-ground annulus with a nominal outer diameter close to 298.1 mm, sitting concentrically around the wafer edge in the “C2” position of the cathode stack. Its job is deceptively simple in appearance and critical in practice: it extends the electrical and physical surface of the chuck beyond the silicon, so that the wafer edge sees the same plasma environment as its centre.

In a TEL 300 mm reactive-ion or capacitively coupled etch chamber, the wafer is clamped to an electrostatic chuck on the RF-driven lower electrode. Without a focus ring, the plasma sheath would bend sharply at the wafer perimeter, ion trajectories would tilt inward, and the outermost few millimetres of every wafer would etch differently from the rest. The focus ring sits in the gap between the wafer edge and the surrounding chamber hardware, raising the sheath boundary out to the ring edge and keeping ion bombardment vertical across the full wafer.

Because it is directly exposed to ions and reactive species, the focus ring is a true consumable. It erodes measurably over its service life, and that erosion is one of the primary drivers of edge-region drift and chamber-to-chamber mismatch. Maintaining a fresh, dimensionally correct ring is therefore a routine but high-leverage element of fab preventive maintenance.

Functional role of the focus ring in TEL 300 mm etch platforms

The C2 focus ring performs several overlapping electrical and physical functions at the wafer edge, all of which feed into edge etch uniformity and particle control:

  • Extends the plasma sheath beyond the silicon edge so the outer wafer annulus sees vertical ion incidence rather than a tilted, converging sheath.
  • Maintains a continuous RF return surface around the wafer, stabilising the local impedance and keeping the edge field symmetric.
  • Sets the radial position of the sheath inflection so that critical dimension, etch rate and profile angle track from centre to edge.
  • Confines and shapes the plasma at the periphery, limiting how far reactive species and ions spill past the wafer onto chamber hardware.
  • Protects the underlying electrode and chuck edge from direct ion bombardment, acting as a sacrificial surface that is far cheaper to replace than the cathode assembly.
  • Provides a controlled, repeatable edge geometry across PM cycles so that recipe results remain comparable from one ring change to the next.

Material and process performance

Plasma-grade material and erosion behaviour

Focus rings in this position are produced from plasma-resistant materials selected to match the chemistry of the process, commonly high-purity silicon, silicon carbide or quartz depending on the etch step. The material is chosen so its erosion products are compatible with the wafer (silicon and SiC contribute no foreign metallic contamination) and so the ring wears at a predictable, slow rate under fluorine- or chlorine-based plasmas.

  • High purity to avoid introducing metallic or particulate contamination at the wafer edge.
  • Uniform, fine-grained microstructure for even, predictable erosion rather than localised pitting.
  • Thermal stability to withstand repeated heating and cooling without cracking or warping.
  • Chemical resistance tuned to the halogen plasmas used in dielectric and silicon etch recipes.

Dimensional and surface precision

The AD360-3.4-298.1 designation reflects a tightly controlled geometry: a nominal 298.1 mm reference diameter and a defined step or thickness profile that positions the ring relative to the wafer plane. Flatness, parallelism and the height of the ring relative to the wafer surface all influence where the sheath bends, so these dimensions are held to fine tolerances.

  • Concentricity with the chuck so the edge field is symmetric all the way round the wafer.
  • Controlled ring-to-wafer height and step geometry to set the correct sheath profile at the edge.
  • Flat, parallel seating faces for good thermal and electrical contact with the electrode.
  • Clean, defect-free surface finish to minimise nucleation sites for particles and arcing.

Impact on tool performance and yield

Because the focus ring governs the electrical and physical environment of the outer wafer annulus, its condition feeds straight through to edge yield and chamber matching. A worn, mispositioned or wrong-material ring shows up as a band of out-of-spec die around the wafer perimeter.

  • Edge critical-dimension drift and tilted etch profiles in the outer few millimetres of the wafer.
  • Loss of edge etch-rate uniformity, narrowing the usable area and reducing die per wafer.
  • Chamber-to-chamber and tool-to-tool mismatch when rings in a fleet are at different stages of wear.
  • Increased particle counts as erosion debris and flaking contaminate the wafer edge.
  • Recipe instability that forces re-qualification and consumes engineering time.

Common wear and failure modes

Erosion and thinning

The dominant failure mode is gradual erosion. Continuous ion bombardment slowly removes material, reducing ring height and rounding the inner edge. As the ring thins, the sheath drops relative to the wafer plane and edge etch behaviour drifts away from the qualified window, eventually pushing the perimeter die out of specification.

Cracking and chipping

Thermal cycling, mechanical handling and the inherent brittleness of silicon, SiC and quartz can lead to hairline cracks or chipped edges. A cracked ring is a particle source and can shift electrically, and in severe cases fragments can land on the wafer or interfere with clamping and seating.

Particle generation and surface roughening

As the surface roughens with use, deposited films and erosion products accumulate and can flake away. This raises on-wafer particle counts at the edge and is frequently the trigger for a scheduled ring change even before the dimensional limit is reached.

Installation and replacement guidance

Focus-ring replacement is a standard preventive-maintenance task, but the edge environment is sensitive enough that careful, clean handling directly affects how well the chamber requalifies afterwards. Follow your facility’s documented TEL PM procedure; the steps below summarise good practice.

  • Vent the chamber, lock out RF and gas supplies, and allow the electrode to cool to a safe handling temperature.
  • Remove the worn ring and inspect the electrode seat, chuck edge and surrounding hardware for residue, damage or wear.
  • Clean the seating surfaces per the approved procedure so the new ring makes uniform thermal and electrical contact.
  • Unpack the new ES7099-014 ring in a clean area, handling only with gloved hands or approved tooling to avoid contamination and edge chips.
  • Seat the ring concentrically in the C2 position, confirming it lies flat and fully home with no rock or gap.
  • Reassemble the chamber, pump down, run leak and conditioning steps, then season the chamber as specified.
  • Requalify with edge-sensitive monitor wafers and update the part-life log before returning the tool to production.

Spare parts strategy for TEL etch consumables

Focus rings are wear items consumed on a predictable cadence, which makes them ideal candidates for buffered stock. ESCT Fab Support helps fabs hold the right rings on the shelf without overcommitting to single-source supply.

  • Second-source new parts verified to the form, fit and function of OEM P/N 3D10-250318-11.
  • A clear, dedicated ESCT reference (ES7099-014) for repeatable reordering and inventory control.
  • An alternative supply line that reduces dependence on a single channel for a high-turnover consumable.
  • A typical lead time of 4-5 weeks, supporting planned PM scheduling and safety-stock replenishment.
  • Application support to confirm compatibility against your specific TEL chamber and process step.

Frequently asked questions

What does this focus ring actually do?

It surrounds the 300 mm wafer in the lower electrode assembly and extends the plasma sheath beyond the silicon edge. This keeps ion bombardment vertical and the RF environment symmetric at the wafer perimeter, which is what preserves edge etch uniformity and edge die yield.

Is this an original TEL OEM part?

No. This is a second-source, brand-new part supplied by ESCT Fab Support and verified to the form, fit and function of TEL OEM P/N 3D10-250318-11. It is not an original Tokyo Electron OEM component and is not sold as one.

What is the AD360-3.4-298.1 designation?

It identifies the ring’s family and key geometry, with a nominal reference diameter close to 298.1 mm and a defined thickness or step profile. These dimensions set where the sheath bends relative to the wafer, so they are held to tight tolerances.

How do I know when the ring needs replacing?

Replacement is usually driven by accumulated process hours, measurable thinning at the inner edge, rising edge particle counts, or edge critical-dimension drift seen on monitor wafers. Most fabs replace the ring on a scheduled PM interval before it reaches its dimensional wear limit.

Will a fresh ring affect my process results?

Yes, as with any focus-ring change, the edge environment is reset, so the chamber should be conditioned and requalified after installation. Using a dimensionally correct, plasma-grade ring keeps that transition predictable and supports good chamber matching.

What is the lead time and how do I reorder?

Typical lead time is 4-5 weeks. Reorder using the ESCT reference ES7099-014, or quote OEM P/N 3D10-250318-11; our team can confirm compatibility against your specific TEL chamber and etch step before you commit.

Summary

The TEL C2 focus ring (OEM P/N 3D10-250318-11, ESCT P/N ES7099-014) is a plasma-grade edge-confinement consumable for Tokyo Electron 300 mm etch chambers. By extending the plasma sheath beyond the wafer edge and maintaining a symmetric RF return, it protects edge etch uniformity, edge yield and chamber-to-chamber matching. As a sacrificial wear item it erodes over its service life and is replaced on a routine PM cadence. Supplied by ESCT as a second-source new part on a 4-5 week lead time, it offers a verified, inventory-friendly alternative for keeping TEL etch tools in qualified, productive condition.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250318-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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