OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The TEL cathode electrode designated “CEL, OX T10-75-C912(COC-N)” is a plasma-facing silicon electrode used in Tokyo Electron (TEL) 300 mm capacitively coupled plasma etch chambers configured for dielectric and oxide etch work. The “CEL” abbreviation identifies it as the cell or cathode electrode assembly that forms the powered or counter electrode surface directly above the wafer, while the “OX” descriptor signals that this particular variant is dressed for oxide and dielectric etch chemistries rather than conductor or silicon etch. As a cathode-type component, it is the surface across which RF energy is coupled into the process gas to strike and sustain the plasma.
In a TEL oxide etch chamber the cathode electrode sits within the upper electrode stack, facing the electrostatic chuck and wafer across the plasma sheath. It is typically a high-purity silicon disc, often paired with a silicon ring and backing structure, and is one of the most chemically and energetically stressed consumables in the chamber. Because it is directly in contact with fluorocarbon-rich plasma and subject to continuous ion bombardment, its surface erodes over the course of normal production and becomes a scheduled wear item.
Why it matters: the cathode electrode does not merely complete the electrical circuit. Its material composition, surface finish, perforation or gas-distribution pattern and flatness all influence plasma density, radical chemistry, etch rate and across-wafer uniformity. A worn, contaminated or out-of-spec electrode shows up immediately as drift in critical dimension, etch depth and particle counts, which is why fabs treat it as a controlled, frequently replaced part.
Within the upper electrode assembly, the silicon cathode electrode performs several interlocking jobs that together determine how cleanly and uniformly the chamber etches dielectric films:
Cathode electrodes for oxide etch are manufactured from high-purity silicon precisely because the electrode is consumed during processing and any metallic or particulate impurity is delivered straight onto the wafer. High resistivity and tight control of trace contaminants keep both the etch chemistry and the defect budget stable, while a uniform, controlled erosion rate keeps the chemistry shift across the electrode’s service life is predictable.
Beyond bulk material, the geometry of the electrode is what the process actually sees. Flatness and parallelism to the chuck set a uniform electrode gap; surface finish governs local plasma sheath behaviour and particle adhesion; and, where present, the perforation pattern shapes gas delivery. Deviations here translate directly into edge-to-centre etch non-uniformity.
Because the cathode electrode influences plasma generation, chemistry and uniformity simultaneously, its condition is tightly coupled to wafer-level results. A degraded or non-conforming electrode shows up across several yield-relevant metrics:
The primary wear mechanism is steady sputter and chemical erosion of the silicon face under ion bombardment. As the electrode thins, the gap and sheath change, the fluorine-scavenging contribution falls off, and etch rate and selectivity drift outside their control limits, marking the end of useful life.
Localised hot spots, polymer build-up and thermal cycling roughen the surface and can initiate micro-cracks. These features shed particles onto the wafer and, in severe cases, lead to chipping or fracture of the brittle silicon, producing sudden defect excursions.
Fluorocarbon polymer accumulation and back-side or edge contamination disturb the electrical contact and RF return path. The result can be arcing, unstable plasma ignition and reflected-power faults that interrupt processing and can damage the electrode and adjacent hardware.
The cathode electrode is a contamination-sensitive, brittle silicon part and must be handled under the fab’s qualified procedure. The following sequence reflects good general practice; always follow TEL’s approved maintenance documentation for the specific chamber and recipe set.
Plasma-facing electrodes are high-frequency consumables, so sourcing strategy directly affects both cost of ownership and tool uptime. ESCT Fab Support offers this cathode electrode as a managed alternative to single-channel OEM procurement:
It is the silicon cathode electrode in the upper electrode stack of a TEL 300 mm oxide etch chamber. It couples RF power into the plasma, acts as a sacrificial silicon source that helps balance the etch chemistry, and sets the upper plasma boundary that governs etch rate and uniformity.
No. This is supplied as a second-source NEW, OEM-compatible electrode. It is manufactured to match the form, fit and function of TEL OEM P/N 3D10-302020-11 but is not an original TEL part and is not sold as one.
It corresponds to TEL OEM P/N 3D10-302020-11 and is catalogued by ESCT Fab Support as ES7099-073 to simplify reordering.
The current lead time is 4-5 weeks. Because the electrode is a recurring wear item, we recommend factoring this into your preventive-maintenance and stocking plans so replacements are on hand ahead of scheduled changes.
Service life depends on chemistry, power and run time, so it varies between processes. The electrode is consumed by erosion during normal operation and is replaced on a wear-driven schedule once etch rate, selectivity, uniformity or particle metrics approach their control limits.
As a high-purity, brittle silicon component it should remain in its protective packaging until installation, be handled only with clean gloves, and never have its plasma-facing surface touched. Avoid mechanical shock to prevent chipping or cracking, and store in a clean, dry environment.
The CEL oxide etch cathode electrode (OEM P/N 3D10-302020-11, ESCT P/N ES7099-073) is a high-purity silicon plasma-facing electrode for TEL 300 mm capacitively coupled oxide etch chambers. It couples RF power, sources sacrificial silicon to tune fluorine chemistry, and defines the upper plasma boundary, making its material purity, flatness and surface condition decisive for etch rate, selectivity, uniformity and particle performance. As a consumable subject to erosion, roughening and deposition-driven failures, it requires planned replacement and chamber re-qualification. Supplied second-source NEW with a 4-5 week lead time, it offers fabs a cost-effective, dependable alternative for keeping TEL etch chambers in qualified production.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-302020-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
We use cookies We use analytics cookies to see how visitors use this site, so we can improve it. They are set only if you accept. Read our Cookie Policy.
