RING(LR),FOCUS ATC-BSP 7.5-360

PART DETAILS

2010-259999-11
RING(LR),FOCUS ATC-BSP 7.5-360

OEM P/N: 

2010-259999-11

ESCT P/N: 

ES7099-101

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring, ATC-BSP configuration (OEM P/N 2010-259999-11), edge-confinement consumable for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-101 · Tokyo Electron (TEL) 300 mm plasma etch chamber focus ring

The TEL Focus Ring identified by OEM part number 2010-259999-11 is an annular, plasma-exposed consumable that surrounds the 300 mm wafer on the lower electrode (cathode) assembly of a Tokyo Electron plasma etch chamber. Within the ATC-BSP family of TEL etch process modules, this focus ring sits concentric with the wafer, occupying the narrow annular gap between the wafer edge and the chamber’s grounded confinement hardware. Its principal job is to extend the wafer’s electrical and thermal boundary outward so that the plasma sheath remains uniform all the way to the extreme edge of the substrate.

In a high-density etch chamber, the few millimetres of process space at the wafer perimeter behave very differently from the chamber centre. Without a correctly profiled ring of matched electrical properties, the sheath bends, the ion trajectories tilt and the etch front skews. The focus ring is the component engineered specifically to suppress this edge effect, recovering usable die from the outermost rows of the wafer where modern device economics demand near-perfect yield. The “7.5–360” designation in the raw part name reflects its dimensional and full-circumference (360°) profile within the consumable set.

Because it is directly bombarded by reactive ions and radicals throughout every plasma cycle, the focus ring is a scheduled consumable: it erodes predictably, shifts the process window as it thins, and must be replaced on a defined interval to hold edge etch performance and particle counts within specification. Sourcing a verified, form-fit-and-function equivalent such as ESCT part ES7099-101 is therefore central to keeping cost-of-ownership in check.

Functional role of the focus ring in Tokyo Electron etch platforms

The focus ring is not a passive spacer. It is an active part of the chamber’s electrical and electromagnetic geometry, tuned to carry the plasma sheath smoothly across the wafer-to-ring transition. On a TEL lower-electrode assembly it performs several interlinked functions simultaneously:

  • Extends the plasma sheath beyond the wafer edge so that ion trajectories at the perimeter stay vertical, preserving etch profile and critical-dimension control on the outermost die.
  • Provides electrical continuity with the wafer, matching local capacitance and conductivity so the sheath does not collapse or distort at the substrate boundary.
  • Confines and shapes the plasma laterally, helping define the active process region and reducing erosion of more costly cathode and electrode hardware behind it.
  • Acts as a sacrificial barrier that absorbs ion bombardment in place of the underlying electrode and dielectric, protecting high-value parts from premature wear.
  • Contributes to the local thermal boundary at the wafer edge, influencing edge temperature and therefore etch rate and selectivity in that zone.
  • Maintains a controlled gap and concentricity around the wafer, stabilising RF return characteristics and the symmetry of the discharge.

Material and process performance

Focus rings for TEL etch chambers are manufactured from materials selected to balance plasma resistance, electrical behaviour and particle cleanliness. The exact material is matched to the process the chamber runs, with the most common choices being high-purity silicon, silicon carbide or quartz, each carrying distinct erosion and contamination signatures.

Plasma and erosion resistance

The ring must survive continuous fluorine- and oxygen-bearing chemistries together with energetic ion bombardment while eroding at a slow, predictable rate. Material grade and surface finish are chosen to keep that erosion uniform and to avoid the micro-masking and roughening that generate defects.

  • High-purity feedstock to minimise metallic and mobile-ion contamination of the wafer edge.
  • Controlled bulk resistivity so the ring presents the intended electrical load to the plasma.
  • Tight surface-finish and flatness control to support a stable, repeatable sheath profile.

Dimensional and electrical matching

The ring’s inner diameter, step height and seating geometry are specified tightly because they directly set the wafer-edge sheath shape. A few tenths of a millimetre of deviation can shift edge tilt and CD, so dimensional fidelity to the OEM profile is required.

  • Inner diameter and step profile matched to the OEM drawing for correct wafer-edge sheath behaviour.
  • Concentric seating surface to keep the ring centred relative to the wafer and electrode.
  • Consistent thickness so initial chamber matching and the erosion-driven process drift are predictable.

Impact on tool performance and yield

Because the focus ring governs the most demanding region of the wafer, its condition translates directly into measurable process and yield metrics. A worn, mismatched or contaminated ring shows up quickly in edge data:

  • Edge critical-dimension drift and profile tilt that erode yield on the outermost die rows.
  • Degraded within-wafer etch-rate uniformity as the ring thins and the sheath profile changes.
  • Rising particle and defect counts as the eroded ring surface roughens and sheds material.
  • Chamber-to-chamber mismatch when ring condition differs across a fleet of nominally identical tools.
  • Shortened intervals between wet cleans and unplanned tool downtime when wear is left unaddressed.

Common wear and failure modes

Progressive plasma erosion

The dominant wear mode is simple consumption: ion bombardment steadily thins the ring and reshapes its step profile. As height is lost, the wafer-edge sheath drops and ion tilt at the perimeter increases, pushing edge CD and profile out of specification even before any visible damage appears.

Cracking and chipping

Thermal cycling and mechanical handling can crack or chip brittle silicon, silicon-carbide or quartz rings, particularly near the inner edge where they are thinnest after erosion. A cracked ring becomes a particle source and can disturb local RF behaviour, so any visible fracture warrants immediate replacement.

Surface roughening and deposition

Over time the exposed surface roughens and accumulates polymer or etch by-product deposits. These layers flake under thermal and plasma stress, raising defect counts, and they can also alter the ring’s effective electrical load, contributing to gradual process drift between scheduled cleans.

Installation and replacement guidance

Focus-ring replacement is a routine preventive-maintenance activity, but because the part defines edge process behaviour it must be handled with care and installed exactly to the OEM procedure. The following sequence reflects general good practice; always follow your site’s qualified maintenance documentation for the specific chamber.

  • Vent and isolate the chamber per the approved procedure, confirm RF and gas are locked out, and allow the lower electrode to cool to a safe handling temperature.
  • Open the chamber and inspect the seating area, removing the worn focus ring with clean, powder-free gloves and dedicated handling tools to avoid contamination.
  • Clean the electrode seating surface and verify it is free of particles, residue and damage that could prevent correct ring seating.
  • Unpack the new ring only at the chamber, inspect it for chips or cracks, and confirm it matches the part you removed in profile and dimension.
  • Seat the ring concentrically and fully flat, confirming there is no rocking, lift or gap around the circumference.
  • Close the chamber, pump down, leak-check, and run the prescribed season or conditioning recipe to stabilise the new surface before production.
  • Qualify with edge CD, uniformity and particle checks, then reset the consumable counter to begin the new wear interval.

Spare parts strategy for Tokyo Electron etch consumables

Focus rings are high-frequency consumables, so a reliable supply at a sensible cost is fundamental to fab economics. ESCT Fab Support stocks and sources verified equivalents to keep your TEL etch fleet running without overpaying or waiting on extended OEM lead times.

  • Verified form, fit and function against the OEM specification for confident drop-in replacement.
  • Competitive pricing on a recurring consumable to optimise cost-of-ownership across the fleet.
  • Defined, repeatable lead times that support planned preventive-maintenance scheduling.
  • Clear part traceability through ESCT P/N ES7099-101 and OEM reference 2010-259999-11.
  • Knowledgeable support to help confirm compatibility with your specific chamber configuration.

Frequently asked questions

What does this focus ring actually do in the chamber?

It surrounds the 300 mm wafer on the lower electrode and extends the plasma sheath beyond the wafer edge. This keeps ion trajectories vertical at the perimeter, preserving edge critical dimension, profile and etch uniformity on the outermost die.

Is this an original OEM part?

No. This item is supplied as a new, OEM-compatible part from a second source. It is verified to match the original TEL part (OEM P/N 2010-259999-11) in form, fit and function, but it is not an original Tokyo Electron branded component.

How often does a focus ring need replacing?

Replacement is driven by accumulated plasma hours and the resulting erosion rather than a fixed calendar date. Each process and recipe wears the ring at a different rate, so most fabs set a consumable interval based on edge-CD drift, uniformity and particle data for their specific application.

What is the lead time for ES7099-101?

The standard lead time for this part is approximately 4–5 weeks. We recommend holding buffer stock of high-use consumables such as focus rings so that planned maintenance is never gated by procurement.

How can I tell when the ring is worn out?

Tell-tale signs include measurable edge critical-dimension or profile drift, degrading within-wafer uniformity, rising particle counts and visible thinning, roughening or chipping of the ring on inspection. Any crack is cause for immediate replacement.

Will installing this ring affect my process window?

A fresh ring restores the edge sheath to its as-new geometry, so a brief season or conditioning recipe followed by an edge-CD and particle qualification is advised before returning the chamber to production. Once qualified, a correctly matched ring should reproduce the established process window.

Summary

The TEL focus ring supplied under ESCT P/N ES7099-101 (OEM P/N 2010-259999-11) is a plasma-exposed edge-confinement consumable for Tokyo Electron 300 mm etch chambers. By extending the plasma sheath beyond the wafer edge and presenting a matched electrical and thermal boundary, it protects edge critical dimension, etch uniformity and particle performance, while sacrificially shielding the more costly electrode hardware behind it. As a predictable wear part, it benefits from a planned spare-parts strategy: ESCT offers a verified second-source equivalent with traceable part references, competitive pricing and a defined 4–5 week lead time to keep your etch fleet qualified and productive.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2010-259999-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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