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The Tokyo Electron focus ring carried under OEM part number 3D10-250971-11 is a tapered, plasma-facing consumable that surrounds the production wafer within a TEL 300 mm etch process chamber. Designated internally as a “T4.5” short-height (SH) ring with a “TAPER306” edge profile, it is the annular component that sits immediately outboard of the wafer edge on the lower electrode assembly, bridging the electrical and geometric discontinuity between the silicon being processed and the surrounding chamber hardware. Its tapered inner shoulder is machined to a specific cross-section so that the plasma sheath bends smoothly across the wafer perimeter rather than collapsing or flaring at the abrupt edge of the substrate.
In a plasma etcher, the few millimetres at the extreme wafer edge are the hardest region to control. Without a correctly profiled ring in place, the electric field lines terminate sharply at the wafer rim, ion trajectories tilt, and etch rate and feature profile drift away from the centre-of-wafer target. The focus ring exists to extend the active plasma area beyond the wafer, presenting a sacrificial surface that absorbs the field distortion so that the outermost usable die see the same vertical ion flux as the wafer centre. Because it is directly exposed to energetic ions and reactive radicals, it is treated as a scheduled consumable and replaced on a defined erosion budget.
This listing covers a second-source, factory-new equivalent to the TEL component, manufactured to match the original dimensions, taper geometry and material behaviour so that it drops into the existing electrode pocket and reproduces the same edge process window.
The focus ring is a multi-duty edge component. Its tapered profile and material properties combine to perform several jobs at once, all of which directly shape the etch result at the wafer perimeter:
A focus ring only does its job if its material survives the plasma without contaminating the wafer and if its geometry holds tolerance across the consumable life. Two performance domains dominate.
Edge rings of this type are produced from process-matched materials such as high-purity silicon, silicon carbide or quartz, selected so that any sputtered atoms are compatible with the wafer chemistry rather than introducing metallic contamination. The chosen material must resist physical sputtering and chemical attack from the fluorine-, chlorine- or bromine-based chemistries used in TEL etch recipes.
The “T4.5” height and “TAPER306” inner-edge angle are not cosmetic; they define how the sheath bends over the wafer rim. A second-source ring must reproduce the inside diameter, taper angle, step height and overall thickness of the original so that the as-installed edge process window matches the qualified recipe.
Because the focus ring controls the hardest region of the wafer to process, its condition feeds straight through to yield, particularly on the outer die that increasingly dominate the economics of 300 mm production:
The focus ring is intended to wear out; the engineering question is whether it wears predictably or fails early in a way that costs wafers.
The dominant wear mode is gradual erosion of the tapered inner shoulder. As the ring thins and the taper recedes, the sheath flattens at the wafer edge, ion tilt increases and the edge etch profile drifts. This is the expected end-of-life mechanism that the replacement interval is built around.
Thermal cycling, mechanical handling or arcing can crack or chip a brittle silicon or quartz ring. A fractured ring is an immediate particle source and can disturb wafer clamping or seating, so a damaged ring must be removed from service rather than run to its erosion budget.
Over many RF hours the exposed surface roughens and accumulates polymer or by-product films. Flaking of this build-up generates particles, while a contaminated or arcing surface can perturb the local RF return and degrade edge uniformity before the ring is geometrically worn out.
Focus ring replacement is a routine preventive-maintenance task, but it must be done under proper cleanroom and ESD discipline and always in line with the documented TEL procedure for the specific chamber. A typical sequence is:
Focus rings are high-turnover consumables, so availability and consistency matter as much as the unit cost. Sourcing this ring through ESCT Fab Support gives fab planners a dependable alternative to single-channel OEM supply:
It surrounds the wafer on the lower electrode and extends the plasma and RF field beyond the substrate edge. Its tapered profile shapes the plasma sheath so that ions strike the outermost die vertically, keeping edge etch rate and feature profile consistent with the centre of the wafer.
No. This is a second-source, factory-new part supplied as an OEM-compatible equivalent to TEL P/N 3D10-250971-11. It is built to match the original form, fit and function but it is not an original TEL-branded component and is not sold as one.
These refer to the ring’s specific geometry, the inner-edge taper profile and the short-height (SH) build at the indicated thickness class. Those dimensions define how the sheath bends at the wafer edge, which is why a replacement must reproduce them exactly to hold the qualified edge process window.
Replacement is driven by accumulated RF hours and erosion of the taper rather than a fixed calendar date. Each fab sets a ring-life budget based on its recipe and edge-uniformity tolerance, replacing the ring once erosion begins to push edge performance toward the limit.
The current quoted lead time is 4-5 weeks. Because focus rings are predictable consumables, we recommend forecasting demand against your PM cycle and holding buffer stock so that ring changes are never gated by procurement.
When a ring matches the OEM material behaviour and geometry, it reproduces the same edge process window. As with any consumable change, best practice is to verify edge etch rate and uniformity on a monitor wafer after installation before returning the chamber to production.
The tapered focus ring under TEL P/N 3D10-250971-11 (ESCT P/N ES7099-081) is a plasma-facing edge consumable that governs how the sheath behaves at the wafer rim in TEL 300 mm etch chambers. Its taper geometry and process-matched material extend the plasma beyond the wafer, steer ion trajectories toward vertical incidence, protect chamber hardware and stabilise edge etch uniformity. As an erosion-limited part it is replaced on a defined budget, and sourcing it as a second-source, factory-new equivalent through ESCT gives fabs a traceable, cost-effective alternative with a 4-5 week lead time that supports planned maintenance and consistent edge die yield.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250971-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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