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The part listed under OEM number 3D10-250970-11 is a focus ring, a circular, plasma-facing consumable that encircles the 300 mm wafer inside a Tokyo Electron etch process chamber. Decoding the raw nomenclature, “RING, FOCUS SH T4.5-2 TAPER 306” describes a focus ring fitted to a shower-head (SH) upper-electrode hardware set of the T4.5-2 family, featuring a tapered inner-edge profile (the “306” taper designation). In plain terms, this is the sacrificial ring that sits immediately outboard of the wafer, level with or just below the wafer surface, and shapes the electric field at the extreme edge of the substrate.
In a TEL 300 mm capacitively coupled plasma etcher, the wafer rests on an electrostatic chuck while RF power drives a plasma between the lower electrode and the showerhead upper electrode. The focus ring extends the effective electrode surface beyond the wafer’s physical edge, so that the plasma sheath and ion trajectories remain vertical and uniform right out to the last few millimetres of usable silicon. Without it, the field would curve sharply at the wafer perimeter, tilting ions and skewing etch profiles in the outermost dies.
Because the focus ring is directly exposed to energetic ion bombardment and reactive plasma chemistry, it is a scheduled-replacement consumable rather than a permanent assembly. Its dimensions, taper geometry and material composition are tightly controlled, because even small changes in ring height or edge profile shift the etch result on the wafer edge, the region where yield is hardest won. The tapered “306” inner profile on this part is engineered to manage sheath shaping and minimise edge tilt across the ring’s service life.
The focus ring is one of the most influential consumables governing edge-of-wafer performance. Although it is a passive component, its electrical and geometric behaviour directly determines how the plasma terminates at the wafer boundary. Its principal functions include the following.
Focus rings for TEL etch chambers are typically manufactured from high-purity silicon, silicon carbide (SiC) or quartz, with the exact material chosen to suit the process chemistry and to control particle generation. The material must erode predictably under fluorine- or chlorine-based plasmas so that ring height changes in a controlled, characterisable way rather than spalling or flaking.
Ring height, flatness, inner-diameter taper and concentricity are the parameters that most strongly affect edge yield. The tapered 306 inner profile and the overall T4.5-2 form factor must reproduce the OEM geometry precisely, because the wafer-to-ring step height sets the local sheath shape.
Because the focus ring controls the most sensitive region of the wafer, its condition feeds directly into device yield and process repeatability. As the ring erodes and its height drops, the sheath at the wafer edge changes shape and edge results drift. The consequences of a worn, mismatched or incorrectly installed ring include the following.
The dominant wear mode is steady erosion from ion bombardment, which gradually reduces ring height and changes the inner taper. As the wafer-to-ring step grows, the edge sheath bends, edge etch results drift, and eventually the ring reaches the height at which it must be replaced to hold the process within specification.
Repeated rapid heating and cooling, mechanical mishandling, or uneven seating can initiate cracks in silicon, SiC or quartz rings. A cracked ring can shed particles, disturb the local field and, in the worst case, fragment within the chamber, forcing an unscheduled wet clean and requalification.
As the surface roughens and polymer or by-product films build up, the ring becomes a particle source. Flaking deposits and localised micro-masking raise defect counts on the wafer edge and can push the chamber out of its particle specification before the ring’s geometric life is exhausted.
Focus ring replacement is a routine preventive-maintenance task, but it must be carried out cleanly and precisely because the ring sits at the most yield-sensitive part of the chamber. The following sequence reflects good general practice; always follow the applicable TEL maintenance procedure and your fab’s safety protocols.
Focus rings are high-turnover consumables, so a reliable supply at predictable cost protects both tool availability and the maintenance budget. ESCT Fab Support offers this ring as a verified, form-fit-and-function compatible alternative to the OEM part, helping fabs diversify supply without compromising edge performance.
It surrounds the 300 mm wafer and extends the active electrode surface beyond the wafer edge, keeping the plasma sheath flat and ion trajectories vertical so the outermost dies etch with the same profile and uniformity as the wafer centre.
No. This is supplied as a second-source new part, verified to the original’s form, fit and function and cross-referenced to TEL OEM P/N 3D10-250970-11. It is not an original OEM-branded component, but it is intended as a fully compatible replacement.
The 306 taper refers to the engineered angle of the ring’s inner edge. This taper shapes the plasma sheath at the wafer boundary to compensate for the field bending that naturally occurs at the edge, which helps control edge tilt and etch profile.
Replacement interval depends on process chemistry, RF power and run time, so it is defined by each fab’s preventive-maintenance plan rather than a fixed figure. The ring is replaced once erosion reduces its height enough to push edge results out of specification or when particle levels rise.
Focus rings for TEL etch chambers are commonly high-purity silicon, silicon carbide or quartz, with the material matched to the process and to the OEM specification so that erosion behaviour, purity and RF coupling reproduce the original part.
This ring carries a typical lead time of 4–5 weeks. Quote it using ESCT P/N ES7099-080 or the OEM reference 3D10-250970-11; planning orders against your PM schedule puts rings on the shelf before they are needed.
The focus ring under OEM P/N 3D10-250970-11 (ESCT P/N ES7099-080) is a plasma-facing edge consumable for TEL 300 mm etch chambers fitted with T4.5-2 showerhead hardware. Its tapered 306 inner profile shapes the plasma sheath at the wafer boundary, holding edge critical dimensions, profile angle and uniformity steady across its service life. As a sacrificial component, it erodes predictably and is replaced on a planned PM cadence to protect edge yield and particle performance. Supplied by ESCT as a second-source new part verified to OEM form, fit and function, it offers fabs a cost-effective, well-supported alternative for keeping TEL etch tools in spec.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250970-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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