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The focus ring designated RING, FOCUS 360-298.1-T12.1 is a circular plasma-facing consumable that sits at the outer edge of the electrostatic chuck in a Tokyo Electron (TEL) 300 mm plasma etch chamber. It encircles the 300 mm wafer, bridging the discontinuity between the silicon edge and the surrounding chamber hardware. The numeric descriptors in the part name describe its geometry and revision: a nominal 360 mm outer envelope class, a 298.1 mm reference diameter that locates the ring concentrically around the wafer, and a T12.1 thickness or profile designation that fixes the height of the ring face relative to the wafer plane. Each of these dimensions is functionally substantial, because the ring works by shaping the electric field and plasma sheath precisely at the wafer perimeter.
In a TEL capacitively coupled etch reactor, the wafer edge is the most difficult region to process uniformly. Without a focus ring, the plasma sheath would bend sharply around the wafer edge, distorting ion trajectories and causing the outermost few millimetres of every wafer to etch at the wrong rate, angle and profile. The focus ring extends the wafer surface electrically and physically, pushing the sheath distortion outward, off the product wafer and onto the sacrificial ring itself. As a result, the ring is a true consumable: it is deliberately positioned to absorb the ion bombardment and erosion that would otherwise degrade die at the wafer edge.
Because the ring is consumed in service, its dimensional accuracy and material quality directly determine edge yield, process repeatability and the interval between scheduled maintenance events. The ESCT Fab Support equivalent, P/N ES7099-130, is supplied as a 2nd source NEW part built to the same form, fit and function as the TEL original, with a typical lead time of 4 to 5 weeks.
The focus ring is not a passive spacer. It is an active component of the chamber’s electrical and plasma architecture, and it carries several distinct responsibilities at the wafer edge simultaneously.
Focus rings for TEL etch chambers are produced from carefully selected plasma-resistant materials, commonly high-purity silicon, silicon carbide or sintered quartz grades depending on the process recipe, because the ring must survive aggressive fluorine and oxygen chemistries while contributing negligible contamination to the wafer.
The ring face is exposed to continuous ion bombardment and reactive species. The material grade is chosen to erode slowly and predictably, so the change in ring height over its service life remains gradual rather than abrupt, keeping edge etch behaviour within tolerance for as long as possible.
Material purity and surface finish are critical because any trace contaminant sputtered from the ring can deposit on the wafer or generate defect-causing particles. The 298.1 mm locating diameter and the precision-machined faces give repeatable seating and minimise micro-arcing and flaking at the edge.
Because the focus ring governs the etch environment exactly where edge die are processed, its condition has an outsized effect on wafer-level results and on overall tool availability.
The dominant wear mode is gradual erosion of the ring face under ion bombardment. As the T12.1 height is consumed, the step relative to the wafer changes, the sheath at the edge re-shapes, and edge etch rate and profile drift out of specification. This is the normal end-of-life mechanism and is the reason the ring is tracked as a scheduled consumable.
Repeated thermal cycling and mechanical handling can initiate cracks, chips or fractures, particularly at the inner edge or at thin sections. A cracked ring can shift position, generate large particles, or fail abruptly, and must be replaced immediately to avoid wafer scrap and possible chuck damage.
In polymerising etch chemistries, redeposited films accumulate on the ring surface. As these layers thicken they crack and flake, releasing particles onto the wafer edge and raising defect counts. Surface roughening from late-life erosion accelerates this behaviour and is a common trigger for replacement even before the ring reaches its theoretical thickness limit.
Focus ring replacement is a routine preventive-maintenance activity, but it must be carried out cleanly and precisely because the ring’s seating and concentricity directly affect edge process results. The following sequence reflects good practice; always follow the equipment owner’s approved TEL maintenance procedure and site safety rules.
Focus rings are high-frequency consumables, so a reliable, cost-effective supply is what keeps TEL etch chambers running at target uptime. Sourcing through ESCT Fab Support gives fabs and maintenance teams a dependable alternative to single-source OEM procurement.
It surrounds the 300 mm wafer at the edge of the electrostatic chuck and electrically extends the wafer surface outward. This keeps the plasma sheath flat and vertical across the outermost die, controls ion incidence angle at the perimeter, and absorbs the erosion that would otherwise damage edge die, protecting both yield and the chuck beneath it.
No. This is a 2nd source NEW, OEM-compatible focus ring supplied by ESCT Fab Support under P/N ES7099-130. It is manufactured to match the form, fit and function of TEL OEM P/N 2L10-251765-11, but it is not an original OEM-branded component and is not sold as one.
They describe the ring’s geometry and revision: a 360 mm outer envelope class, a 298.1 mm reference diameter that locates the ring concentrically around the wafer, and a T12.1 thickness or profile designation that fixes the ring height relative to the wafer plane. These dimensions are functionally important because they set the edge sheath geometry and RF coupling.
Typical indicators are drift in edge etch rate or critical dimension, changes in feature profile on the outermost wafer rows, rising particle or defect counts, and visible erosion, roughening, cracking or chipping during inspection. Many fabs replace the ring on a scheduled consumable interval based on accumulated RF or process hours before these symptoms appear.
The typical lead time for ES7099-130 is 4 to 5 weeks. Because focus rings are consumed regularly, we recommend holding buffer stock and aligning orders with your preventive-maintenance schedule so replacements are always on hand.
A correctly specified ring built to the same dimensions and material grade should perform equivalently to the original. As with any consumable change, we recommend qualifying the part on your specific recipe (checking edge uniformity, profile and particle performance) before releasing it into full production, which is standard practice for any new consumable lot.
The RING, FOCUS 360-298.1-T12.1 (TEL OEM P/N 2L10-251765-11, ESCT P/N ES7099-130) is a plasma-confinement edge consumable for TEL 300 mm plasma etch chambers. Seated around the wafer on the electrostatic chuck, it shapes the plasma sheath, controls ion angle at the wafer edge and sacrificially absorbs erosion to protect edge die and the chuck. Its dimensional accuracy, material purity and erosion behaviour directly drive edge yield, particle performance and maintenance intervals. Supplied as a 2nd source NEW, OEM-compatible part with a 4 to 5 week lead time, ES7099-130 offers a dependable, cost-effective alternative for keeping TEL etch tools at target uptime.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251765-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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