OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The TEL Focus Ring 360-T3.6 (OEM P/N 2L10-251884-11) is a precision annular consumable installed at the wafer periphery inside Tokyo Electron 300 mm plasma etch process chambers. Designated “360-T3.6(320)”, the part is a thin-profile focus ring, the “T3.6” reflects its nominal ring thickness in the 3.6 mm class and the “320” its diameter envelope appropriate to a 300 mm wafer footprint. It seats concentrically around the electrostatic chuck, bridging the gap between the silicon wafer edge and the chamber hardware so that the plasma sheath does not terminate abruptly at the last few millimetres of usable die.
In a plasma etcher, the focus ring is one of the most influential pieces of chamber hardware on edge die yield. By extending the conductive (or dielectric) surface beyond the wafer, it carries the plasma sheath outward and keeps the electric field lines that steer incoming ions vertical right out to the wafer edge. Without a correctly profiled focus ring at the right height, the sheath bends downward at the wafer boundary, ions arrive at an angle, and etch features at the extreme radius tilt, bow or close off, scrapping otherwise good devices in the outer rings of the wafer map.
Because it sits directly in the discharge and is continuously bombarded by energetic ions, the 360-T3.6 focus ring is a scheduled consumable. It erodes predictably over kilowatt-hours of RF on-time, and its gradual thinning is one of the primary drivers of edge etch-rate drift between preventive maintenance cycles. Maintaining a qualified supply of replacement rings such as ESCT P/N ES7099-113 is therefore central to keeping a 300 mm etch fleet matched and within process specification.
The focus ring is a passive but electrically active component: it shapes the plasma sheath, defines the edge boundary condition for ion transport, and protects the chuck periphery from the discharge. In TEL 300 mm etch chambers it performs several interlocking functions simultaneously.
Focus rings of this class are produced from plasma-grade consumable materials, typically high-purity silicon, silicon carbide or quartz depending on the recipe chemistry, selected for controlled, contamination-free erosion rather than absolute durability. The material choice and dimensional precision of the 360-T3.6 ring directly govern its etch behaviour and its useful service life.
The ring must erode cleanly and uniformly so that the products of its own consumption do not contaminate the wafer or alter the local chemistry. High purity and tight microstructural control minimise metallic and particulate contribution as the surface is sputtered away over time.
The thin 3.6 mm-class profile, inner diameter and flatness of the ring set the initial sheath geometry. Small deviations in thickness or step height relative to the wafer translate into measurable shifts in edge ion angle and etch rate.
Because the focus ring controls the boundary condition for the entire wafer edge, its state propagates directly into yield, fleet matching and PM scheduling. A worn, mismatched or incorrectly installed ring shows up quickly in edge die data.
The dominant wear mechanism is steady sputter erosion of the upper surface under ion bombardment. As the ring thins, the height relationship between ring and wafer changes, the sheath bends at the edge, and edge etch rate and profile drift away from target, this is what ultimately defines the ring’s replacement interval.
Repeated thermal cycling and plasma stress can initiate micro-cracks, edge chipping or surface flaking, especially in a thin-profile ring. Liberated fragments become particle sources that land on the wafer as killer defects and can force an unscheduled chamber clean.
If the ring is not seated flat and concentric, or if debris is trapped beneath it, the wafer-to-ring gap becomes non-uniform, producing azimuthal etch asymmetry. Chips or hairline fractures introduced during handling or installation can also seed early failure.
Focus ring replacement is a routine preventive-maintenance task, but the thin profile and contamination sensitivity of this consumable demand careful, clean-handling discipline. Always follow the applicable TEL maintenance procedure and your fab’s safety practices.
Focus rings are high-frequency consumables, so a reliable, qualified supply keeps etch tools matched and productive. ESCT Fab Support offers the 360-T3.6 focus ring (ES7099-113) as a cost-effective, fully verified alternative to sole-sourcing through the OEM.
It sits around the wafer in a TEL 300 mm etch chamber and extends the plasma sheath beyond the wafer edge, keeping ion trajectories vertical so that etch features at the outermost die stay within specification. It also shields the chuck periphery and is consumed sacrificially over time.
No. This is supplied as a second-source new component, not an original Tokyo Electron part. It is manufactured and verified to match the OEM ring’s form, fit and function as a compatible replacement for OEM P/N 2L10-251884-11.
Replacement is driven by accumulated RF on-time and by process indicators, principally edge etch-rate drift, critical-dimension shift at the wafer perimeter and rising particle counts. Most fabs set a fixed RF-hour limit and confirm it against measured wear at PM.
The standard lead time is 4–5 weeks. Because focus rings are recurring consumables, many customers maintain buffer stock and order against their planned preventive-maintenance schedule to avoid downtime.
A new ring resets the edge environment, so it should be installed and qualified per procedure, including any conditioning or seasoning step, before production release. Keeping rings at comparable wear stages across chambers is key to maintaining chamber-to-chamber matching.
Rings of this class are made from plasma-grade consumable materials such as high-purity silicon, silicon carbide or quartz, chosen to erode cleanly without contaminating the wafer. The replacement is produced to match the erosion behaviour of the OEM material.
The TEL Focus Ring 360-T3.6 (OEM P/N 2L10-251884-11, ESCT P/N ES7099-113) is a thin-profile plasma-edge confinement consumable for Tokyo Electron 300 mm etch chambers. By extending and shaping the plasma sheath at the wafer perimeter, it preserves vertical ion trajectories, stabilises edge etch rate and critical dimensions, and protects the chuck while eroding sacrificially over RF on-time. As a high-frequency consumable, it benefits from a qualified, cost-effective second source: ESCT Fab Support delivers a new, form-fit-function-verified ring with a 4–5 week lead time to keep etch fleets matched, productive and within yield specification.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251884-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
We use cookies We use analytics cookies to see how visitors use this site, so we can improve it. They are set only if you accept. Read our Cookie Policy.
