OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The Focus Ring 360-298.1-T12.1 is an annular plasma-confinement consumable used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. It is a precision-machined ring that sits concentrically around the 300 mm wafer on the electrostatic chuck, framing the wafer edge and extending the plasma sheath beyond the silicon perimeter. The designation 360-298.1 broadly reflects the ring’s outer and inner diametral envelope in millimetres, while the T12.1 suffix denotes the nominal thickness or profile revision that determines how the ring height relates to the wafer top surface. Supplied here under ESCT P/N ES7099-132, it is offered as a second-source new part cross-referenced to TEL OEM P/N 2L10-251925-11.
In a capacitively coupled or magnetically enhanced TEL etch chamber, the focus ring is one of the most heavily duty-cycled consumables in the process kit. It is directly exposed to the same reactive plasma chemistry and energetic ion bombardment as the wafer, but it has a singular job: to shape the electric field and plasma sheath at the wafer edge so that the outermost few millimetres of the substrate etch with the same profile, depth and critical dimension as the centre. Because it carries radiofrequency potential and forms part of the RF return path, the ring is not a passive spacer, it is an active element of the electrostatic and plasma environment.
As the focus ring erodes through normal use, the sheath geometry over the wafer edge changes, edge etch rate and tilt drift, and edge-die yield falls. Maintaining the ring within its specified height and profile window is therefore a first-order lever on edge-to-edge process uniformity and on the recurring cost of ownership of every TEL etch chamber it serves.
The focus ring performs several interdependent functions simultaneously, blending electrical, plasma-physical and mechanical roles within the lower electrode assembly:
Focus rings for TEL etch tools are produced from process-matched materials chosen for their resistance to fluorine- and chlorine-based plasmas and for their low particle generation. The material grade dictates both the erosion rate and the chemical compatibility with the process being run.
The wetted ring surface must withstand sustained ion bombardment and aggressive halogen chemistries without spalling or shedding particles. Common focus-ring materials and their behaviour include:
Beyond chemistry, the ring’s as-machined geometry is what determines its electrical and plasma performance. Critical attributes include:
Because the focus ring governs the plasma environment at the wafer edge, its condition propagates directly into device-level results. A worn, cracked or out-of-spec ring produces measurable consequences:
The dominant wear mechanism is steady physical and chemical erosion of the ring’s top surface under ion bombardment. As the ring thins below the T12.1 profile window, the sheath drops relative to the wafer edge, ion tilt increases and edge etch results drift out of specification, the normal trigger for scheduled replacement.
Repeated thermal cycling between plasma-on and plasma-off states stresses brittle silicon, SiC or ceramic. Micro-cracks can propagate from the inner or outer edge and lead to chipping or fracture, which abruptly degrades confinement and releases particles into the chamber.
Late in life the eroded, roughened surface sheds particulate that lands on the wafer or chuck, while localised arcing at field concentrations can pit the ring and the adjacent hardware. Both raise defectivity and signal that the consumable has reached the end of its useful service window.
Focus-ring replacement is a routine preventive-maintenance task, but it must be performed cleanly to protect the chuck and to preserve chamber matching. The following sequence reflects general best practice; always follow the applicable TEL maintenance procedure for the specific tool and module:
Focus rings are scheduled-replacement consumables, so a reliable, cost-effective supply directly affects both uptime and cost of ownership. Sourcing ES7099-132 through ESCT Fab Support offers several advantages:
It surrounds the 300 mm wafer on the electrostatic chuck and extends the plasma sheath past the wafer edge. This keeps ion trajectories vertical and the electric field uniform at the periphery, so the outermost dies etch with the same depth, profile and critical dimension as the centre of the wafer.
No. ES7099-132 is supplied as a second-source new part. It is manufactured to match the form, fit and function of TEL OEM P/N 2L10-251925-11 and is fully compatible with the application, but it is not an original Tokyo Electron OEM component and is not sold as one.
Replacement is normally driven by accumulated RF hours or wafer count and confirmed by process indicators: edge critical-dimension drift, profile tilt at the wafer perimeter, falling edge-die yield, or rising particle counts. Once height loss carries the ring outside its profile window, schedule it for change at the next preventive-maintenance opportunity.
Focus rings for TEL etch tools are made from process-matched materials such as high-purity silicon, silicon carbide or fine ceramics, selected for halogen-plasma resistance and low particle generation. The appropriate grade depends on the specific etch process; please confirm your process requirements when ordering so the correct material specification is supplied.
The nominal lead time is 4–5 weeks. Because the focus ring is a scheduled consumable, most fabs hold buffer stock sized to their preventive-maintenance cadence and chamber count, then reorder against that consumption so a replacement is always on hand before the ring reaches end of life.
When supplied to the correct material and dimensional specification and installed per procedure, the ring is intended to behave equivalently to the OEM part. As with any consumable change, qualify the chamber after installation, verify edge etch rate, profile and particles, before returning it to production to confirm matching is preserved.
The Focus Ring 360-298.1-T12.1 (ESCT P/N ES7099-132, cross-referenced to TEL OEM P/N 2L10-251925-11) is a precision edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By shaping the plasma sheath and electric field at the wafer edge, it preserves edge etch uniformity, critical-dimension control and edge-die yield, while serving as a sacrificial barrier that protects the electrostatic chuck. Supplied as a second-source new part with a 4–5 week lead time, it offers fabs a cost-effective, equivalence-verified route to maintaining this high-frequency consumable across single tools and multi-chamber fleets alike.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251925-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
We use cookies We use analytics cookies to see how visitors use this site, so we can improve it. They are set only if you accept. Read our Cookie Policy.
