RING,FOCUS 312-T6 G50L WIDE

PART DETAILS

2L10-252759-11
RING,FOCUS 312-T6 G50L WIDE

OEM P/N: 

2L10-252759-11

ESCT P/N: 

ES7099-224

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring 312-T6 G50L wide (OEM P/N 2L10-252759-11), edge plasma confinement ring for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-224 · Tokyo Electron (TEL) compatible focus ring consumable

The TEL Focus Ring 312-T6 G50L Wide is a circular plasma-facing consumable that sits in the immediate annular region surrounding the 300 mm wafer inside a Tokyo Electron plasma etch process chamber. Designated by OEM part number 2L10-252759-11 and supplied by ESCT Fab Support as ES7099-224, this component belongs to the family of focus rings (sometimes called edge rings) whose job is to extend the active plasma region and electric field beyond the wafer edge, so that the outermost die receive the same etch treatment as those at the centre.

In a 300 mm etch chamber the wafer is clamped to an electrostatic chuck within an RF-driven cathode assembly. The focus ring forms a continuation of that surface out beyond the silicon edge. The “G50L Wide” descriptor points to a wider profile variant within the 312-T6 ring family, intended to give a broader, more forgiving sheath-shaping band around the wafer perimeter. Because this ring is consumed by the very plasma it shapes, it is one of the most frequently replaced parts in any high-throughput etch process and a primary lever for controlling edge yield.

Understanding precisely how the 312-T6 G50L Wide ring conditions the plasma at the wafer edge, and how its gradual erosion shifts process results, is central to maintaining stable critical dimensions, uniform etch depth and low particle counts across long production campaigns.

Functional role of the focus ring in Tokyo Electron etch platforms

The focus ring is not a passive spacer. It is an electrically and geometrically active part of the cathode environment, and small changes to its surface, height or composition translate directly into changes at the wafer edge. Within a TEL 300 mm etch chamber the 312-T6 G50L Wide ring performs several interlocking functions:

  • Extends the plasma sheath and electric field radially outward past the wafer edge, so the ion trajectories that strike the outermost die remain as vertical as those over the wafer centre.
  • Shapes the sheath boundary to suppress the edge “tilt” and bowing that otherwise distorts feature profiles in the outer few millimetres of the wafer.
  • Provides a sacrificial, plasma-compatible surface that absorbs ion bombardment at the perimeter rather than allowing it to attack the chuck or surrounding chamber hardware.
  • Maintains a controlled electrical and capacitive transition between the biased wafer/cathode and the grounded chamber, helping to stabilise the RF return path at the edge.
  • Establishes the gas-flow and pressure boundary conditions immediately around the wafer, influencing how etch by-products are swept away from the edge region.
  • Acts as a defined, replaceable wear element so that perimeter erosion is concentrated in a serviceable consumable rather than in costly permanent chamber parts.

Material and process performance

Focus rings of this class are manufactured from high-purity, plasma-resistant materials, typically silicon, silicon carbide or comparable etch-compatible ceramics, selected so that their erosion products do not contaminate the process chemistry. The material choice and the precise machined geometry together determine both how the ring shapes the sheath and how long it survives in service.

Plasma and chemical resistance

The plasma-facing surface must endure continuous ion bombardment and reactive fluorine-, chlorine- or bromine-based chemistries without breaking down into mobile particles or metallic contaminants. Material purity and microstructure directly govern erosion rate and particle behaviour.

  • High base-material purity to avoid introducing metals or mobile ions into sensitive etch processes.
  • Resistance to chemical and physical sputtering under sustained ion energy at the wafer edge.
  • Controlled, predictable erosion so that consumable life can be planned around process drift rather than catastrophic failure.
  • Low tendency to redeposit eroded material as flaking films on adjacent surfaces.

Dimensional and geometric accuracy

The wide G50L profile, inner diameter, step height and flatness are machined to tight tolerances because the ring’s exact position relative to the wafer plane sets the local sheath shape. A ring that seats too high, too low or out of round will skew edge etch results even when the material is otherwise sound.

  • Precise inner-diameter and step dimensions to register the ring concentrically around the wafer.
  • Tight flatness and parallelism so the upper surface presents a uniform plane to the plasma.
  • Consistent thickness so that the as-new sheath geometry matches the qualified process recipe.
  • Clean, defined seating features that mate repeatably to the chuck and surrounding hardware.

Impact on tool performance and yield

Because the focus ring governs conditions in the outer annulus of the wafer, precisely where edge die are most vulnerable, its condition has an outsized effect on usable yield. As the ring erodes, its upper surface recedes and the sheath it supports collapses inward, changing the etch result at the edge well before any other symptom appears.

  • Edge critical dimension and etch-depth uniformity drift outside specification as the ring wears down.
  • Profile tilt and bowing increase in the outermost die, reducing the count of saleable chips per wafer.
  • A worn or cracked ring sheds particles that drive defect counts and scrap upward.
  • Wafer-to-wafer and run-to-run repeatability degrade as the consumable ages, complicating process control.
  • Unplanned ring failures force unscheduled chamber opens, recovery and re-qualification, eroding tool availability.

Common wear and failure modes

Surface erosion and height loss

The dominant wear mode is gradual erosion of the plasma-facing surface, which lowers the ring height and recesses the sheath-shaping band. This is normal, expected consumption, but it steadily shifts edge etch behaviour and ultimately defines the ring’s replacement interval.

Cracking and chipping

Thermal cycling, mechanical handling and localised hot spots can initiate cracks or chips, particularly at thin sections or edges. A fractured ring can release sizeable particles, disturb the local field and, in severe cases, compromise the wafer or chuck.

Particle generation and redeposition

As erosion advances, the surface roughens and accumulated etch by-products can flake away. This redeposition raises particle counts on the wafer and on chamber surfaces, often becoming the first measurable signal that the ring is approaching end of life.

Installation and replacement guidance

Focus-ring replacement is a routine but contamination-sensitive procedure. Always follow the applicable TEL maintenance documentation and your fab’s lock-out and handling protocols; the sequence below is a general guide rather than a substitute for the OEM procedure.

  • Place the chamber in the correct maintenance state, vent to atmosphere and confirm RF and gas sources are isolated and the tool is locked out.
  • Open the chamber and inspect the worn ring, the chuck surface and the surrounding hardware for erosion, debris or damage.
  • Remove the spent focus ring carefully, avoiding contact with the electrostatic chuck, and clean the seating area per the approved chamber-clean procedure.
  • Unpack the replacement 312-T6 G50L Wide ring in a clean environment using gloved hands or appropriate tooling, and inspect it for chips, cracks or contamination.
  • Seat the new ring concentrically into its registration features, confirming it lies flat and fully home with no rocking or gap.
  • Close the chamber, pump down, perform any required leak check, seasoning or conditioning, and reset the consumable life counter.
  • Run qualification or monitor wafers to confirm edge uniformity and particle performance before returning the tool to production.

Spare parts strategy for Tokyo Electron etch consumables

Focus rings are high-turnover consumables, so maintaining ready stock protects tool availability. ESCT Fab Support offers the 312-T6 G50L Wide ring (ES7099-224) as a verified TEL-compatible alternative that lets fabs control cost and lead time without compromising edge performance.

  • Verified to the form, fit and function of the original OEM focus ring for confident drop-in use.
  • A cost-effective second-source alternative to OEM consumable pricing on a frequently replaced part.
  • Quoted lead time of 4–5 weeks, supporting planned replenishment and safety-stock strategies.
  • Clear cross-referencing to OEM P/N 2L10-252759-11 and ESCT P/N ES7099-224 to simplify procurement.
  • Supported by ESCT’s wider catalogue of TEL etch-chamber consumables to consolidate sourcing across kits.

Frequently asked questions

What does the 312-T6 G50L wide focus ring do?

It surrounds the 300 mm wafer in a TEL plasma etch chamber and extends the plasma sheath and electric field past the wafer edge, keeping ion trajectories vertical so that edge die etch as uniformly as those at the wafer centre.

Is this an original OEM part?

No. This ring is supplied as a new, second-source, OEM-compatible part. It is not an original Tokyo Electron component, but it is verified to match the form, fit and function of OEM P/N 2L10-252759-11 so it can be used in place of the original consumable.

How often does a focus ring need replacing?

Replacement intervals depend on the chemistry, RF power and run hours of each process. Because the ring erodes continuously, fabs typically set a wafer-count or RF-hour limit informed by edge-uniformity and particle data rather than waiting for visible failure.

What happens if a worn ring is left in service too long?

Excessive height loss collapses the edge sheath, pushing edge critical dimension and etch depth out of specification and increasing profile tilt. Continued use also raises particle counts and the risk of cracking, which can scrap wafers and force unplanned downtime.

What is the lead time for this part?

The current quoted lead time is 4–5 weeks. Because focus rings are high-turnover consumables, we recommend holding safety stock and reordering against your planned replacement cadence to avoid tool stoppages.

How do I confirm this ring fits my chamber?

Match the OEM part number 2L10-252759-11 and the ESCT reference ES7099-224 against your tool’s bill of materials. The 312-T6 G50L Wide designation identifies the specific wide-profile variant, so confirming both numbers gets the correct ring for your configuration.

Summary

The TEL Focus Ring 312-T6 G50L Wide (OEM P/N 2L10-252759-11, ESCT P/N ES7099-224) is a precision plasma-facing consumable that shapes the sheath around the wafer edge in Tokyo Electron 300 mm etch chambers. By extending the active plasma region past the silicon, it preserves edge etch uniformity, protects critical dimensions and helps keep particle counts low, right up to the point where erosion dictates replacement. Supplied by ESCT Fab Support as a verified second-source consumable with a 4–5 week lead time, it offers fabs a cost-effective way to keep etch tools running at qualified performance.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252759-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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