RING,FOCUS 324-T5.5G50L WIDE

PART DETAILS

2L10-252760-11
RING,FOCUS 324-T5.5G50L WIDE

OEM P/N: 

2L10-252760-11

ESCT P/N: 

ES7099-227

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL wide-profile focus ring (OEM P/N 2L10-252760-11), edge confinement consumable for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-227, 2nd source NEW focus ring, OEM-compatible replacement for TEL 300 mm etch chambers

The TEL focus ring identified by OEM part number 2L10-252760-11 (catalogue designation “324-T5.5G50L WIDE”) is a circular plasma-facing consumable that surrounds the 300 mm wafer at the perimeter of a Tokyo Electron plasma etch chamber. Its job is to extend and shape the plasma sheath and electric field beyond the edge of the wafer so that the outermost dies see etch conditions as close as possible to those at the centre. The “WIDE” descriptor reflects a broader radial profile than the standard ring, a geometry typically specified to improve edge-to-edge uniformity control and to tune the ion-angle distribution across the wafer’s outer annulus.

Mechanically, the ring seats concentrically around the electrostatic chuck (ESC) and sits flush against, or just outboard of, the wafer edge. It is one of the most exposed parts in the chamber, taking direct ion bombardment and radical flux through every process cycle. Because it defines where the wafer’s edge “ends” electrically, even small changes in its height, width or surface condition translate directly into measurable shifts in critical dimension (CD), etch rate and profile angle at the wafer edge.

As a scheduled consumable, this focus ring is replaced on a wear interval rather than run to catastrophic failure. Keeping a qualified, dimensionally faithful replacement on the shelf is what allows a fab to hold edge yield steady and avoid the productivity loss that comes from chasing a drifting process on a worn ring. ESCT supplies this part as a 2nd Source NEW component, manufactured to match the form, fit and function of the original.

Functional role of the focus ring in TEL 300 mm etch platforms

Within a Tokyo Electron capacitively coupled etch chamber, the focus ring performs several interlocking electrical and physical functions at the wafer edge. It is far more than a passive spacer; its dielectric or semiconducting properties, its height relative to the wafer surface and its radial width all participate in setting the local plasma environment.

  • Extends the plasma sheath radially outward past the wafer edge so the field does not terminate abruptly at the last die.
  • Maintains a vertical ion trajectory at the wafer perimeter, preventing the sheath from bending and tilting features at the edge.
  • Provides a controlled RF return and impedance match at the edge that conditions the local etch rate and selectivity.
  • Shields the underlying chuck edge and ceramic hardware from direct ion and radical attack, protecting more expensive components.
  • Sets a sacrificial wear surface that can be swapped economically, concentrating chamber degradation onto a low-cost consumable.
  • Defines the wide-profile edge geometry used to broaden the uniform-etch band toward the extreme wafer edge for high die-count layouts.

Material and process performance

Plasma-resistant material construction

Focus rings for TEL 300 mm etch tools are produced from plasma-grade materials selected for their resistance to fluorine- and chlorine-based chemistries and for predictable, slow erosion. Common constructions include high-purity silicon, silicon carbide and quartz, with the material chosen to match the chamber’s electrical scheme and the specific etch recipes it runs.

  • High-purity feedstock to minimise metallic and particulate contamination at the wafer edge.
  • Controlled resistivity so the ring’s electrical behaviour stays consistent across its service life.
  • Surface finish engineered to limit micro-cracking and flake generation under thermal cycling.
  • Tight dimensional tolerances on inner diameter, outer diameter and step height to preserve concentricity with the wafer.

Process stability and edge uniformity

The wide radial profile of this ring is intended to push uniform etch behaviour further toward the wafer perimeter, which matters most on layers where edge die yield is a known limiter. A correctly specified ring keeps the sheath geometry stable cycle after cycle, so the recipe behaves the same on the first wafer after a change as it does hundreds of wafers later.

  • Consistent ion-angle distribution that holds edge feature profiles vertical.
  • Predictable erosion rate that supports reliable wear-life scheduling.
  • Stable edge CD and etch depth from wafer to wafer within a campaign.
  • Reduced sensitivity of the outer annulus to chamber-condition drift.

Impact on tool performance and yield

Because the focus ring controls the electrical boundary at the wafer edge, its condition has an outsized effect on yield relative to its cost. As the ring erodes, its height drops and its profile changes, the sheath retreats inward, and the edge process slowly walks away from target. Replacing it on schedule with a dimensionally faithful part is one of the most direct levers for protecting edge die.

  • Edge CD and etch-depth uniformity hold within specification, protecting outer-ring die.
  • Tilted or “swept” sidewall profiles at the perimeter are avoided.
  • Particle counts stay low, reducing defect-driven scrap and post-etch cleans.
  • Chamber-to-chamber matching improves when every tool runs a like-for-like ring.
  • Wet-clean and requalification cycles become more predictable, raising tool availability.

Common wear and failure modes

Erosion and height loss

The dominant wear mode is gradual physical and chemical erosion of the plasma-facing surface. As material is sputtered away the ring loses height, the local sheath drops below its design position and edge etch rate and CD drift. This is the wear mechanism that ultimately sets the replacement interval and is why height is the key metric tracked over a ring’s life.

Cracking and thermal fatigue

Repeated heating and cooling, combined with mechanical handling during wafer transfer and chamber service, can initiate micro-cracks that propagate into chips or fractures. A cracked ring is a particle source and an immediate risk to wafer-edge defectivity, so any visible crack or chip warrants removal from service.

Polymer build-up and arcing

Etch by-products and polymer can accumulate on and around the ring, altering its surface condition and local impedance. Heavy deposits or contamination can promote micro-arcing at the edge, which damages the ring surface, generates particles and disturbs the RF return path, degrading edge uniformity.

Installation and replacement guidance

Focus ring replacement is a routine preventive-maintenance task, but because the part is plasma-facing and dimensionally critical it must be handled cleanly and seated precisely. Always follow Tokyo Electron’s chamber-specific procedures and your fab’s PM documentation; the steps below describe the general workflow.

  • Place the tool in the correct maintenance mode, vent the chamber and confirm RF power and gas supplies are isolated and locked out.
  • Don clean gloves and use approved tooling; handle the ring only in a particle-controlled manner to avoid contamination.
  • Remove the worn ring, then inspect the chuck edge, seating surface and surrounding hardware for residue, damage or polymer build-up.
  • Clean the seating area per procedure and verify it is free of particles, flakes and debris before fitting the new ring.
  • Inspect the new ring for chips or cracks, then seat it concentrically and flush, confirming there are no gaps or rocking.
  • Close the chamber, pump down, leak-check and run the prescribed season or conditioning recipe to stabilise the new surface.
  • Requalify with edge-uniformity and particle monitor wafers, and log the install to reset the wear-life counter.

Spare parts strategy for TEL etch consumables

Focus rings are high-turnover consumables, so sourcing them reliably and cost-effectively is central to keeping etch tools productive. ESCT Fab Support supplies this ring as a qualified 2nd-source alternative, giving fabs a dependable channel without the constraints of single-source OEM procurement.

  • 2nd Source NEW manufacture verified to the form, fit and function of OEM P/N 2L10-252760-11.
  • Referenced under ESCT P/N ES7099-227 for fast, repeatable reordering.
  • Cost-competitive supply that helps control the consumable budget on high-usage etch chambers.
  • A typical lead time of 4-5 weeks supports planned inventory and PM scheduling.
  • A second qualified source that reduces exposure to single-supplier shortages.

Frequently asked questions

What does this focus ring do in the chamber?

It surrounds the 300 mm wafer at the edge of a TEL plasma etch chamber and shapes the plasma sheath and electric field just beyond the wafer perimeter. This keeps ion trajectories vertical and etch conditions uniform out to the outermost die, which is critical for edge yield.

Is this an original OEM part?

No. This is a 2nd Source NEW, OEM-compatible focus ring supplied by ESCT and verified to match the form, fit and function of OEM P/N 2L10-252760-11. It is not an original Tokyo Electron part and is offered as a qualified alternative.

What does the “WIDE” designation mean?

It indicates a wide-profile variant with a broader radial dimension than the standard ring. This geometry is specified to extend the uniform-etch band further toward the wafer edge and to fine-tune the edge ion-angle distribution for processes where outer-die performance is a priority.

How do I know when to replace it?

Focus rings are replaced on a wear schedule driven mainly by height loss from erosion, supported by drift in edge CD, rising particle counts or any visible cracking or chipping. Track ring height and edge-uniformity trends against your established PM interval and replace before the process walks out of specification.

What material is the ring made from?

Rings of this class are made from plasma-grade materials such as high-purity silicon, silicon carbide or quartz, chosen for resistance to fluorine and chlorine etch chemistries and for slow, predictable erosion. The material is matched to the chamber’s electrical scheme to keep edge behaviour consistent through the ring’s service life.

What is the lead time for this part?

The typical lead time is 4-5 weeks. We recommend holding buffer stock of high-turnover consumables like focus rings so that scheduled PM and unplanned swaps are never gated by procurement.

Summary

The wide-profile focus ring under OEM P/N 2L10-252760-11 (ESCT P/N ES7099-227) is an edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By shaping the plasma sheath and electric field beyond the wafer edge, it holds edge CD, etch depth and feature profile uniform out to the last die while protecting the chuck and chamber hardware beneath it. Erosion, cracking and polymer build-up are its principal wear mechanisms, tying scheduled, like-for-like replacement to edge yield. Supplied as a 2nd Source NEW, OEM-compatible part with a 4-5 week lead time, it gives fabs a reliable, cost-effective second source for one of the most yield-critical consumables in the etch chamber.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252760-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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