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This part is a silicon focus ring used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. The raw descriptor “RING, F-SI-D380D297.0-T2.8 S-MF” decodes to a focus-type ring (F) machined from silicon (SI) with a nominal outer diameter of 380 mm, an inner diameter of 297.0 mm and a nominal section thickness of 2.8 mm. It is a flat annular consumable that sits immediately outboard of the 300 mm wafer, encircling the wafer edge on the lower electrode of the chamber.
The focus ring is one of the most heavily worked consumables in any capacitively coupled etch reactor. Because its inner bore is only a few millimetres larger than the wafer it surrounds, it directly shapes the plasma sheath at the wafer edge, extends the electrical and thermal boundary of the wafer outward, and intercepts ion flux that would otherwise terminate on the wafer perimeter. Its condition therefore has an outsized influence on edge etch rate, critical-dimension uniformity and the yield of the outermost die.
Because it is consumed by direct plasma exposure, the silicon focus ring is a scheduled replacement item rather than a permanent assembly. ESCT Fab Support stocks this ring as a form-, fit- and function-verified alternative to the TEL original, giving fabs a reliable second source for a part that is replaced on a recurring preventive-maintenance cycle.
In a TEL 300 mm etch chamber the focus ring is mounted on the lower electrode, concentric with the electrostatic chuck, so that its inner edge frames the wafer. Made from silicon, it behaves electrically much like an extension of the silicon wafer itself, allowing the RF sheath and plasma density profile to continue smoothly past the wafer edge instead of collapsing abruptly. Its key functions include the following.
The ring is machined from high-purity silicon, the material of choice for focus rings in fluorine- and fluorocarbon-based etch chemistries. Silicon matches the wafer electrically and chemically, which gives predictable edge behaviour.
With a 380 mm outer diameter, a 297.0 mm inner bore and a 2.8 mm section, the ring is a thin, large-diameter annulus whose flatness and bore concentricity are tightly toleranced. Small geometric deviations translate directly into edge-uniformity error.
Because the focus ring governs the edge environment, its condition is felt most strongly in the outermost rings of die, precisely the area where edge-of-wafer yield loss accumulates. A worn or out-of-spec ring degrades the tool in several measurable ways.
The dominant wear mechanism is plasma erosion. Continuous ion bombardment thins the ring and rounds its inner edge, lowering the effective step height at the wafer boundary and shifting the sheath. This is gradual and predictable, which is why the ring is replaced on a wafer-count or RF-hour basis before it reaches end of life.
As a thin 2.8 mm silicon annulus, the ring is brittle and can crack or chip from thermal-cycling stress, mishandling during a wet clean, or uneven seating on the electrode. A crack or a chipped inner edge is a hard failure: it generates particles and disturbs the local field, and the ring must be scrapped rather than reused.
Over time the exposed surface roughens and can accumulate polymer or by-product films from the etch chemistry. Roughened or coated rings shed particles and alter the secondary-electron and thermal behaviour at the edge, both of which push the chamber out of its qualified window and shorten the interval between cleans.
Focus-ring replacement is a routine preventive-maintenance task, but because the ring is thin silicon and sits at the heart of the edge process, it must be handled and seated with care. The following sequence reflects general best practice; always follow the documented TEL chamber procedure for the specific platform.
Focus rings are high-frequency consumables, so a dependable supply and predictable lead time matter as much as the part itself. Sourcing this ring through ESCT Fab Support gives fab maintenance and procurement teams a practical second-source option for TEL etch chambers.
It is a silicon focus ring that surrounds the 300 mm wafer on the lower electrode of a TEL plasma etch chamber. It extends the plasma sheath past the wafer edge and shapes the field there, keeping etch rate, critical dimension and profile uniform on the outermost die.
No. This is not an original OEM component. It is supplied as a new, OEM-compatible part from a second source, manufactured and verified to the form, fit and function of TEL P/N 2L10-251483-11 so that it performs as a direct replacement in the qualified chamber position.
The ring has a nominal 380 mm outer diameter, a 297.0 mm inner bore and a 2.8 mm section thickness, machined from silicon. These dimensions set the wafer-to-ring gap and the step height that the process recipe is qualified against.
Replacement is driven by erosion, so it is scheduled on wafer count or accumulated RF hours rather than a fixed calendar date. The exact interval depends on the etch chemistry, power and the edge-uniformity limits the process is held to; the ring is changed before erosion shifts edge performance out of specification.
Signs include drifting edge critical dimensions, growing edge-to-centre etch non-uniformity, rising particle counts and a measurable reduction in ring thickness or a rounded inner edge at scheduled inspection. Any crack or chip is an immediate end-of-life condition.
The typical lead time is 4-5 weeks. Because the focus ring is a recurring consumable, we recommend forecasting demand against your preventive-maintenance schedule and holding appropriate safety stock so chamber availability is never gated by part supply.
The ESCT ES7099-087 silicon focus ring (TEL P/N 2L10-251483-11) is a 380 mm OD / 297.0 mm ID, 2.8 mm thick edge-confinement consumable for TEL 300 mm plasma etch chambers. Seated on the lower electrode around the wafer, it extends the plasma sheath, stabilises the RF and thermal boundary at the wafer edge, and protects edge-of-wafer yield. As a plasma-exposed sacrificial part it erodes predictably and is replaced on a planned maintenance cycle. Supplied by ESCT Fab Support as a verified, second-source new part with a typical 4-5 week lead time, it gives fabs a dependable, cost-effective alternative for keeping etch chambers in their qualified edge-process window.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251483-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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