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The component supplied under ESCT P/N ES7099-086 is a silicon focus ring engineered for Tokyo Electron (TEL) 300 mm plasma etch process chambers. The OEM designation, 2L10-251482-11, identifies a precision-machined annular consumable that surrounds the production wafer at the wafer-support plane. The internal part code “F-SI” denotes a focus ring fabricated from silicon, while the dimensional fields describe an approximate 380 mm outer diameter, a 297.0 mm inner diameter and a 3.4 mm nominal thickness, a thin, large-diameter annulus sized to encircle a 300 mm wafer with a closely controlled radial gap.
In a TEL etch chamber the focus ring sits immediately outboard of the wafer, resting on or against the electrostatic chuck (ESC) and the surrounding ground or insulator hardware. It is one of the most heavily duty-cycled consumables in the chamber because it is directly exposed to the plasma sheath, ion bombardment and the same reactive chemistries that etch the wafer. Its presence extends the wafer’s electrical and physical “footprint” outward, so that the plasma sheath does not collapse or distort at the wafer’s extreme edge.
Because silicon focus rings are sacrificial by design, they erode steadily during normal operation and represent a recurring scheduled-replacement item. As the ring thins and its profile changes, edge etch behaviour drifts, making the focus ring a primary lever for edge yield, die-per-wafer recovery and overall chamber matching. Sourcing a dimensionally faithful, material-correct replacement is therefore central to keeping a 300 mm etch fleet in specification.
The focus ring is far more than a mechanical spacer around the wafer. It is an active participant in the electrostatics of the plasma sheath, shaping how ions arrive at the wafer edge and protecting the chamber hardware beneath it. Within a TEL 300 mm etch chamber it performs several interlinked functions:
A focus ring earns its place through material purity, dimensional fidelity and predictable erosion behaviour. Each of these traits feeds directly into process stability and the consistency of edge results across thousands of RF hours.
Silicon is chosen for focus rings because it is chemically compatible with the same fluorine- and oxygen-bearing chemistries used to etch silicon wafers, so it erodes into volatile by-products rather than shedding metallic contamination. A correctly specified ring must match the OEM grade in resistivity and purity, since these properties influence both the RF behaviour at the edge and the particle and metals budget of the process.
The thin 3.4 mm cross-section, ~380 mm outer diameter and 297.0 mm inner diameter are not arbitrary: they set the step height to the wafer, the radial gap and the starting sheath geometry. A ring machined off-tolerance will alter edge etch from the first wafer, while a ring that erodes unpredictably will shorten usable chamber life between replacements.
Because the focus ring governs the electrostatic environment of the outermost die, its condition translates almost directly into edge yield and chamber matching. A worn, contaminated or out-of-spec ring produces measurable, costly consequences:
As a sacrificial consumable, the focus ring is expected to wear; the engineering goal is to retire it at the right moment and to recognise abnormal failure early.
The dominant wear mode is steady erosion under ion bombardment, which thins the ring and rounds its inner edge. As the step height between wafer and ring falls, the sheath geometry shifts and edge results drift, eventually crossing the process limit and triggering replacement.
Silicon is brittle, and the thin 3.4 mm section is vulnerable to thermal cycling stress and to handling damage during installation. Cracks or chips can release particles, create local arcing sites and disturb the seating plane, all of which can scrap wafers before the ring is even visibly worn.
Polymer or etch-product build-up on the ring surface, or contamination introduced during handling, can flake into the chamber and onto wafers. Once silicon thins enough to expose underlying ground or insulator hardware, localised arcing can occur, damaging both the ring and the components beneath it.
Focus ring replacement is a routine but precision task. Because the part is brittle and its seating directly affects edge uniformity, it should be handled with clean tooling and gloves, and installed against a clean, inspected support surface. The following sequence reflects good practice for a TEL 300 mm etch chamber:
Focus rings are consumed continuously, so supply assurance and dimensional consistency matter as much as unit price. Sourcing through ESCT Fab Support gives fabs a dependable alternative to single-channel procurement for this high-turnover part:
It encircles the 300 mm wafer at the support plane and extends the plasma sheath beyond the wafer edge. By keeping the sheath boundary vertical and the radial electric field uniform at the periphery, it preserves consistent ion energy and incidence angle across the outermost die, which drives edge etch uniformity.
No. This is a 2nd-source new part supplied by ESCT Fab Support as an OEM-compatible equivalent to TEL OEM P/N 2L10-251482-11. It is manufactured and verified to match the form, fit and function of the original, but it is not an original Tokyo Electron OEM component and is not represented as such.
Silicon is chemically matched to the wafer and to the etch chemistry, so it erodes into volatile by-products rather than introducing metallic contamination, and its resistivity supports the intended RF behaviour at the wafer edge. Material choice is dictated by the process and chamber design; this part reproduces the OEM silicon specification.
Replacement interval depends on the recipe, RF hours and the fab’s edge-yield limits rather than a fixed figure. The ring is retired once erosion shifts the step height enough to push edge critical dimensions or etch rate out of specification, so most fabs track it against accumulated RF time and process-monitor data.
The standard lead time is 4–5 weeks. Because focus rings are a continuously consumed item, we recommend ordering against forecast consumption and maintaining a buffer stock so that scheduled replacements are never gated by procurement timing.
Match the OEM part number 2L10-251482-11 against your TEL chamber’s parts list and confirm the ESCT cross-reference ES7099-086. The dimensional envelope corresponds to a 300 mm wafer focus ring; if you are reconciling against an internal BOM, our team can help verify applicability before you order.
ESCT P/N ES7099-086 is a 2nd-source new silicon focus ring for Tokyo Electron 300 mm plasma etch chambers, cross-referenced to OEM P/N 2L10-251482-11. As a thin, large-diameter silicon annulus surrounding the wafer, it extends the plasma sheath, equalises the edge electric field and protects underlying chamber hardware, making it a decisive consumable for edge etch uniformity, profile control and chamber matching. Supplied to OEM form, fit and function with a 4–5 week lead time, it offers fabs a reliable, cost-effective source for one of their highest-turnover etch consumables.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251482-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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