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The Inner Cathode Electrode (CEL, Inner Section, Nested Type, V2 revision) is the central silicon electrode that forms the powered or grounded upper surface of a Tokyo Electron 300 mm capacitively coupled plasma (CCP) etch chamber. In TEL nomenclature, “CEL” denotes the cathode electrode assembly, and this V2 part is specifically the inner segment of a segmented, nested electrode arrangement in which an inner electrode and a surrounding outer ring electrode together define the full wafer-facing surface above the chuck. The inner section sits coaxially over the centre of the 300 mm wafer and is the primary radio-frequency-coupled silicon surface through which etch plasma is sustained.
Because it is consumed directly by the plasma, the inner cathode electrode is one of the most influential consumables in the chamber. Its resistivity, flatness, surface finish and gas-distribution geometry set the conditions for ion energy delivery, radical generation and the centre-region etch rate. As a high-purity silicon component bombarded continuously by energetic ions, it erodes over time and becomes a defined-life part requiring scheduled replacement to hold process windows.
ESCT Fab Support supplies this inner cathode electrode under part number ES7099-040 as a second-source, new component manufactured to match the form, fit and function of TEL OEM P/N 2L10-251342-11, with a typical lead time of 4-5 weeks.
In a TEL CCP etch chamber the upper electrode and the lower wafer-supporting electrode form a capacitor across which RF power strikes and sustains the plasma. The inner cathode electrode is the central wafer-facing silicon surface of that upper electrode, and within the nested V2 design it governs the behaviour of the plasma directly over the bulk of the wafer rather than at its extreme edge. Its specific functions include the following.
The inner cathode electrode is manufactured from high-purity silicon with tightly controlled resistivity, because the electrode is both an electrical element and a sacrificial material that contributes to the plasma chemistry. Material quality directly affects how cleanly the part erodes and how few particles it sheds.
Geometric precision is critical because the electrode defines the upper plasma boundary and, where applicable, the central gas-injection pattern. Flatness and finish influence both uniformity and particle performance across thousands of RF hours.
As the central RF-coupled and sacrificial surface of the chamber, the condition of the inner cathode electrode propagates directly into etch results and fab economics. A worn, out-of-spec or contaminated electrode shifts the centre region of the etch signature and erodes the process margin.
Continuous energetic ion bombardment gradually sputters silicon from the wafer-facing surface, thinning the electrode and shifting the inter-electrode gap. As thickness falls, RF coupling and the central etch rate drift, eventually moving the process outside its control limits and defining the part’s service life.
Over many RF hours the surface roughens and can develop localised pitting, while polymer and film redeposition builds up between cleans. Both effects raise particle counts and can produce on-wafer defects, often the first sign that the electrode is reaching end of life.
Silicon is brittle, so thermal cycling, mechanical stress during handling, or an uneven nested seat against the outer electrode can initiate cracks. Poor seating or contamination at the interface can also cause localised arcing, which rapidly damages the silicon and degrades plasma uniformity.
The inner cathode electrode is replaced during scheduled preventive maintenance on the upper-electrode assembly. Because it is a brittle, plasma-critical silicon part, so handle it cleanly and seat it accurately. Always follow TEL service procedures and your fab’s lockout and safety requirements; the steps below summarise the typical sequence.
Cathode electrodes are scheduled-life consumables, so holding qualified inventory is central to protecting chamber availability. ESCT Fab Support helps fabs secure these parts without over-reliance on a single supply channel.
It is the inner section of a segmented, nested silicon cathode (upper) electrode used in TEL 300 mm capacitively coupled plasma etch chambers. It forms the central RF-coupled, wafer-facing silicon surface and works together with a surrounding outer electrode to define the full upper-electrode surface.
No. This is supplied as a second-source, new component built to match the form, fit and function of TEL OEM P/N 2L10-251342-11. It is not an original OEM part and is not sold as one; it is offered as a compatible alternative under ESCT P/N ES7099-040.
Service life is process-dependent and is measured in RF hours rather than calendar time, because erosion is driven by ion bombardment. High-power, aggressive chemistries consume the silicon faster. Most fabs define a wear or thickness limit and replace the electrode at scheduled preventive maintenance once that limit is reached.
Typical indicators are a drift in centre-region etch rate or uniformity, rising particle counts, changes in the RF match point, and visible surface roughening, pitting or thinning during inspection. Any cracking or evidence of arcing warrants immediate replacement.
The inner electrode must seat squarely against its mount and the outer electrode so the RF return path, electrical contact and inter-electrode gap stay uniform. Poor seating can cause arcing, non-uniform plasma, localised damage to the brittle silicon and degraded centre-to-edge results.
The typical lead time is 4-5 weeks. To confirm compatibility, supply your tool model, chamber configuration and the OEM part number 2L10-251342-11; ESCT application engineering can verify the configuration against ES7099-040 before you order.
The Inner Cathode Electrode, Nested Type V2 (TEL OEM P/N 2L10-251342-11, ESCT P/N ES7099-040) is the central, sacrificial silicon surface of the upper electrode in TEL 300 mm plasma etch chambers. It couples RF power into the plasma over the wafer centre, contributes to etch chemistry as it erodes, and, within the nested electrode design, helps set centre-to-edge uniformity, particle performance and RF stability. As a defined-life consumable subject to ion-bombardment erosion, roughening and brittle-fracture risk, it must be replaced on schedule with a correctly seated, high-purity part. ESCT supplies it as a second-source, new component with a 4-5 week lead time to keep TEL etch chambers in qualified, matched condition.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251342-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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