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The Inner Cathode Electrode Silicon (Nest), V2 revision, is a precision plasma-facing consumable used in Tokyo Electron (TEL) 300 mm capacitively coupled plasma etch chambers. Designated “CEL, INNER ST(NEST)V2” in TEL nomenclature, the part is the inner-zone segment of the cathode electrode (CEL) assembly, the “nest” element that seats centrally within the electrode stack and defines the inner radial portion of the plasma-generating surface directly beneath or surrounding the production wafer. It is a sacrificial silicon component that wears in service and is scheduled for periodic replacement during preventive maintenance.
Within the electrode architecture, the cathode is segmented into discrete inner and outer zones so that RF power coupling, ion flux and surface chemistry can be tuned independently across the wafer radius. The inner cathode silicon occupies the centre of that arrangement, nesting against the surrounding outer electrode and the supporting metallic baseplate. Because it is part of the powered electrode, its surface condition, flatness and electrical contact have a direct and measurable effect on plasma symmetry and on the etch result delivered to every wafer that passes through the chamber.
The “V2” designation marks a revised version of the original electrode geometry, typically reflecting a dimensional, profile or material refinement introduced by the OEM over the part’s production life. ESCT Fab Support supplies this item under part number ES7099-055 as a second-source, new component, manufactured to match the form, fit and function of the original TEL electrode for fabs maintaining these etch platforms.
As an active element of the powered electrode, the inner cathode silicon does far more than physically support or surround the wafer. It is an electrically and chemically participating surface that shapes how plasma forms and behaves over the central region of the substrate. Its principal functions include:
Cathode electrode “nest” components of this class are machined from high-purity, low-resistivity silicon selected for compatibility with fluorocarbon and other halogen-based etch chemistries. High purity matters because the electrode is consumed in service: every atom eroded from its surface enters the plasma, so trace metallic contamination would translate directly into wafer-level defects and device-killing impurities. Consistent bulk resistivity is equally important, since it sets how efficiently RF current passes through the silicon into the plasma.
The geometry of the inner electrode (its flatness, thickness, nesting profile and surface finish) is held to tight tolerances because it sets the gap and field uniformity over the wafer centre. The V2 revision profile must be reproduced faithfully so the part seats correctly against the outer electrode and baseplate without leaving steps, gaps or high-resistance contact points. A controlled surface finish also influences erosion rate and particle generation, helping the electrode age predictably across its service life.
Because the inner cathode electrode sits at the heart of the powered surface, its condition propagates directly into process results. A worn, contaminated or poorly seated part can degrade an otherwise healthy chamber in ways that are difficult to diagnose if the electrode is overlooked:
The dominant wear mechanism is gradual erosion of the silicon by ion bombardment and chemical attack. Over thousands of RF hours the surface roughens and the electrode thins, widening the effective gap and altering the field over the wafer centre. Once thinning passes the qualified limit, the part can no longer hold uniformity and must be replaced.
Localised hot spots, arcing or thermal-mechanical stress can cause pitting, micro-cracks or chipping, particularly at edges and the nesting interface. These defects shed particles onto the wafer and create non-uniform erosion. Silicon is brittle, so mishandling during a PM is itself a frequent source of cracks and premature scrapping.
If the seating surface accumulates residue, oxidises or loses flatness, the RF contact between the silicon and the baseplate becomes resistive and uneven. The resulting localised heating and micro-arcing accelerate erosion, destabilise the plasma and can damage both the electrode and adjacent hardware.
The inner cathode electrode is replaced during scheduled preventive maintenance on the etch chamber. Always follow the relevant TEL maintenance procedure and your fab’s safety protocols; the steps below summarise good practice for a clean, repeatable installation:
Cathode silicon is a recurring consumable, so securing a reliable, cost-effective supply is central to keeping etch tools productive. ESCT Fab Support helps fabs and equipment service providers maintain availability and control spend across these platforms:
It is TEL’s shorthand for the inner cathode electrode (CEL) silicon, the central “nest” component of the segmented cathode, in its V2 revision. It forms the inner radial portion of the powered electrode surface within a 300 mm plasma etch chamber.
No. This item is supplied as a second-source, new component manufactured to match the original electrode’s form, fit and function. It is not an original Tokyo Electron OEM part and is not sold as such, but it is intended as a fully compatible replacement.
V2 indicates the second revision of this electrode as defined by the OEM, usually reflecting a dimensional, profile or material refinement made over the part’s production history. Please confirm that the V2 configuration matches the revision your chamber requires before ordering.
Service life depends on process chemistry, RF power and duty cycle, so it is governed by erosion and accumulated RF hours rather than a fixed interval. Most fabs replace it on a PM schedule informed by erosion measurements and uniformity trend data.
The typical lead time is 4-5 weeks. We recommend holding buffer stock or ordering ahead of planned maintenance so the part is on hand when the tool reaches its replacement point.
Silicon is brittle and contamination-sensitive. Always use clean, powder-free gloves and dedicated tooling, support the part fully, avoid edge impacts, and keep it in its protective packaging until installation to prevent chipping, cracking and surface contamination.
The Inner Cathode Electrode Silicon (Nest) V2, OEM P/N 2L10-251342-11, is a high-purity silicon consumable at the centre of the powered electrode in TEL 300 mm plasma etch chambers. It couples RF energy into the inner zone, shapes the field over the wafer centre and participates in the etch chemistry, making its purity, flatness and contact integrity directly relevant to uniformity, particle performance and yield. As an erosion-driven sacrificial part, it requires scheduled replacement and careful handling. ESCT Fab Support offers it as ES7099-055, a second-source new component with a 4-5 week lead time, to help keep your etch tools in specification and in production.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251342-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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