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The Inner Top Silicon Cathode Electrode (CEL, INNER TP NEST, V2) is a high-purity silicon electrode plate that occupies the inner zone of the upper electrode assembly in Tokyo Electron (TEL) 300 mm capacitively coupled plasma (CCP) etch chambers. In TEL nomenclature, a “CEL” denotes a silicon electrode element, and the “INNER TP” designation identifies this part as the inner top section, the central silicon disc that sits directly above the wafer and forms the plasma-facing surface of the upper electrode. The “NEST” descriptor refers to the nested mounting arrangement in which the inner electrode locates concentrically within the surrounding outer electrode and edge components, while “V2” marks a revised, second-generation geometry intended to refine etch uniformity and consumption behaviour relative to the original design.
As a plasma-facing silicon consumable, this inner top cathode performs a dual duty. Electrically, it is one half of the parallel-plate RF electrode pair that sustains the discharge; chemically and physically, its silicon surface is sacrificially consumed by fluorine-rich plasmas and energetic ion bombardment, scavenging free fluorine and helping to stabilise the chemistry above the wafer. Because it sits at the heart of the discharge, its flatness, thickness, resistivity and surface condition directly shape the electric field, the ion flux distribution and ultimately the etch result across the entire 300 mm wafer.
Part ES7099-149 is offered by ESCT Fab Support as a second-source, new equivalent to TEL OEM P/N 2L10-251316-11, manufactured to match the original in form, fit and function so that engineers can preserve established process recipes while reducing dependence on single-source OEM supply.
Within a TEL CCP etch chamber, the inner top silicon cathode is integral to how RF power is coupled into the gas, how that energy is distributed, and how reactive species are conditioned during the etch. It works alongside the outer electrode, focus and edge rings, and the lower electrode (electrostatic chuck) to define the plasma envelope. Its principal functions include:
The electrical and chemical behaviour of an inner top cathode is dominated by the grade of silicon from which it is machined. ESCT supplies ES7099-149 in silicon matched to the OEM specification so that the part performs identically in service.
Because the inner cathode faces the most intense region of the discharge, its surface metrology and dimensional precision determine how the etch evolves as the part wears.
A worn, mismatched or contaminated inner top cathode does not fail gracefully, it degrades the process gradually until the result drifts outside specification. The condition of this single silicon plate therefore propagates directly into device-level outcomes:
Continuous ion bombardment and fluorine attack steadily consume the silicon surface, thinning the plate and reshaping its profile. As thickness falls, the electrode gap changes and etch rate drifts; eventually the part reaches an end-of-life thickness at which uniformity can no longer be recovered by recipe adjustment.
Localised erosion, thermal cycling and mechanical stress can produce micro-pits, surface roughening or cracks in the silicon. These features shed particles onto the wafer, raising defectivity, and a propagating crack risks catastrophic fracture of the electrode during a run.
Field enhancement at eroded edges or a poorly seated nested interface can trigger arcing that locally damages the silicon and disturbs the plasma. Polymer and by-product redeposition on the surface alters RF coupling and chemistry, while degradation at the inner/outer boundary undermines plasma confinement and zone-to-zone uniformity.
Replacing the inner top silicon cathode is a preventive-maintenance task that should be carried out by trained personnel under cleanroom discipline, following the relevant TEL service documentation for the specific platform. The general sequence is as follows:
Silicon electrode consumables are scheduled-replacement items, so a dependable second source materially improves chamber availability and cost control. ESCT Fab Support positions ES7099-149 as a managed alternative to single-source OEM procurement, with advantages including:
It is the inner top silicon cathode electrode for TEL 300 mm CCP etch chambers, the central silicon plate of the upper electrode that faces the wafer, couples RF power into the plasma and is sacrificially consumed during etching. “Nest” refers to its concentric seating within the surrounding outer electrode, and “V2” indicates a revised second-generation geometry.
No. ES7099-149 is a second-source, new part supplied by ESCT Fab Support as an equivalent to TEL OEM P/N 2L10-251316-11. It is manufactured and verified to match the original in form, fit and function, but it is not an original OEM-branded component.
Because the inner cathode sits directly above the wafer centre, its flatness, thickness, resistivity and surface condition shape the central electric field and ion flux. A part held to the correct silicon grade and dimensions preserves centre-to-edge uniformity; a worn or mismatched one drives etch-rate drift and CD variation.
Replacement is driven by accumulated RF hours and silicon consumption rather than a fixed calendar interval, and varies with the chemistry and power used. It is typically swapped at scheduled preventive-maintenance windows once thickness, particle data or process metrics indicate the silicon is approaching end of life.
The standard lead time is 4-5 weeks. We recommend aligning orders with your preventive-maintenance schedule and holding appropriate safety stock for high-consumption silicon electrode items to protect chamber availability.
Because it is built to OEM form, fit and function, it is intended to drop into the existing nested assembly and run on your established recipe. As with any consumable change, best practice is to qualify the new part with monitor wafers and standard chamber-matching checks before returning to full production.
The Inner Top Silicon Cathode Electrode (ESCT P/N ES7099-149, TEL OEM P/N 2L10-251316-11) is the central plasma-facing silicon plate of the upper electrode in TEL 300 mm CCP etch chambers. Seated concentrically within the nested electrode assembly in its V2 geometry, it couples RF power, scavenges fluorine, shapes the central field and is sacrificially consumed during etching, making its purity, resistivity, flatness and surface condition decisive for uniformity, CD control and particle performance. Supplied new from a second source and verified to OEM form, fit and function, it offers a dependable, cost-effective route to maintaining TEL etch chamber availability while preserving qualified process performance.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251316-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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