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The TEL focus ring identified as 360-T3.8 (314.4) is an annular consumable that surrounds the production wafer inside a Tokyo Electron 300 mm plasma etch chamber. Its descriptor encodes the geometry that defines its job: a nominal outer reference around 314.4 mm and a working ring thickness in the 3.8 mm class, dimensions that place it directly at the wafer edge as part of the electrostatic chuck and lower electrode stack. In service it forms the immediate perimeter against which the plasma sheath terminates, so its profile and condition have a disproportionate influence on the outermost millimetres of every wafer processed.
A focus ring of this type is not a passive spacer. It extends the wafer plane outward so that the radio-frequency sheath, the boundary layer that accelerates ions toward the surface, remains parallel and uniform across the edge exclusion zone rather than collapsing inward at the wafer rim. Without it, ion trajectories at the edge would bend, etch features would tilt or close off, and the usable die count near the wafer perimeter would fall. Because it is exposed to the same energetic ion bombardment and reactive chemistry as the wafer itself, the ring is consumed over time and is treated as a scheduled-replacement part.
This page covers the part supplied by ESCT Fab Support under ES7099-115, a second-source new component built to match the form, fit and function of TEL OEM P/N 2L10-251875-11. The notes below describe what the ring does, the material behaviour that governs its life, the failure signatures that tell engineers it needs changing, and the practices that keep edge yield stable through each ring cycle.
In a Tokyo Electron 300 mm etch chamber the focus ring sits concentric with the wafer on the lower electrode, bridging the electrical and physical gap between the chucked wafer and the surrounding chamber hardware. It performs several distinct functions simultaneously:
Focus rings of this geometry are produced from plasma-grade materials chosen to survive sustained ion bombardment while keeping particle generation and metallic contamination to a minimum. The material selection and dimensional precision together determine how the ring behaves electrically and how predictably it wears.
Depending on the process, edge rings in TEL etch chambers are made from high-purity silicon, silicon carbide or fine-grained quartz. Each is selected so its sputter and chemical-etch behaviour stays compatible with the wafer process, eroding cleanly and slowly rather than flaking or shedding heavy-metal traces.
The 314.4 mm reference diameter and 3.8 mm-class thickness must be held tightly, because even small departures in height or flatness shift the sheath relative to the wafer plane and alter edge etch results from tool to tool.
Because the focus ring governs the outermost zone of every wafer, its condition translates directly into measurable process and yield outcomes:
The dominant wear mode is gradual erosion of the upper surface by ion bombardment. As the ring thins, its top falls below the wafer plane, the sheath dips at the edge, ion angle drifts, and edge critical dimension and profile move out of specification, the signal that the end of useful ring life has been reached.
Thermal cycling, mechanical handling and uneven seating can crack or chip a brittle silicon, silicon-carbide or quartz ring. Cracks change the local electrical and thermal behaviour, while chips release particles into the chamber, both of which can scrap edge die well before the ring is fully eroded.
Polymer build-up, redeposited etch by-products and progressive surface roughening alter the ring’s secondary-electron and recombination behaviour. The result is a slow shift in edge etch rate and a rising particle risk as flakes detach, often appearing as creeping edge non-uniformity between scheduled cleans.
Replacing a focus ring is a routine but precision-sensitive preventive-maintenance task. The following sequence reflects good practice; always follow the specific TEL chamber procedure and your fab’s PM documentation:
Focus rings are recurring consumables, so their availability and consistency matter as much as their initial cost. Sourcing ES7099-115 through ESCT Fab Support gives fabs a dependable second-source channel for this TEL part:
It surrounds the wafer at the edge of the lower electrode and extends the wafer plane outward, keeping the plasma sheath planar across the wafer perimeter. This holds ion trajectories vertical at the rim, preserving edge profile, critical dimension and etch uniformity in the outermost wafer zone.
No. ES7099-115 is supplied as a new, second-source component that is verified to match the form, fit and function of TEL OEM P/N 2L10-251875-11. It is fully compatible with the application but is not an original Tokyo Electron branded part.
The usual indicators are rising edge non-uniformity, drift in edge critical dimension or profile angle, increasing particle counts and visible thinning, roughening or chipping on inspection. Most fabs replace the ring on an accumulated-RF-hours or wafer-count schedule before these symptoms reach yield-limiting levels.
They describe the ring’s geometry: the 314.4 figure is a nominal diameter reference in millimetres and the T3.8 indicates a thickness in the 3.8 mm class. These dimensions are what locate the ring around a 300 mm wafer and define its height relative to the wafer plane, which is why they must be held precisely.
The standard lead time is 4-5 weeks. Because focus rings are consumables with predictable replacement intervals, planning orders against your PM cadence and holding appropriate buffer stock helps avoid any impact on tool uptime.
Light deposition can sometimes be addressed during chamber cleaning, but erosion and height loss are permanent. Once the ring surface has dropped below the wafer plane or shows cracks or chips, cleaning cannot restore the sheath geometry, and replacement is the only way to bring edge performance back to baseline.
The TEL focus ring 360-T3.8 (314.4 mm), OEM P/N 2L10-251875-11, is a precision edge consumable that controls plasma sheath shape, ion incidence angle and RF environment at the wafer rim inside Tokyo Electron 300 mm etch chambers. Its condition directly determines edge critical dimension, profile, uniformity and particle performance, making it a critical scheduled-replacement item. Supplied by ESCT Fab Support as ES7099-115, it offers fabs a new, second-source alternative with clear OEM cross-referencing and a 4-5 week lead time to keep edge yield and chamber matching stable across each ring cycle.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251875-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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