ELECTRODE(With Pin)

PART DETAILS

3D10-250316-11(U1)
ELECTRODE(With Pin)

OEM P/N: 

3D10-250316-11(U1)

ESCT P/N: 

ES7099-110

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

3D10-250316-11 (U1) electrode with pin for TEL systems

Precision plasma electrode assembly for RF energy distribution, plasma generation, and chamber process stability

The 3D10-250316-11 (U1) ELECTRODE (With Pin) is a precision-engineered plasma-facing electrode assembly used in Tokyo Electron (TEL) semiconductor equipment to support RF energy transfer, plasma generation, and repeatable wafer processing performance in advanced semiconductor manufacturing environments.

Installed within the process chamber, the electrode serves as a critical electrical interface responsible for delivering RF power into the plasma environment while maintaining controlled electrical characteristics throughout the process cycle. The integrated pin configuration supports electrical connectivity, assembly positioning, and reliable integration with associated chamber hardware.

In semiconductor applications where plasma uniformity, ion distribution, process repeatability, and defect control directly influence yield performance, so maintain electrode integrity. Because electrodes operate under continuous plasma exposure, RF electrical loading, ion bombardment, thermal cycling, and aggressive process chemistries, erosion, surface degradation, contamination buildup, or electrical wear can gradually affect chamber performance.

The 3D10-250316-11 (U1) is designed to provide stable plasma generation and reliable electrical performance under demanding fab production conditions.

The ESCT equivalent part number for this component is ES7099-110, supplied as a 2nd Source NEW OEM-compatible replacement designed to meet form, fit, and functional requirements aligned with the original TEL component.

Functional role within TEL systems

The 3D10-250316-11 functions as a critical plasma-generation and RF distribution component.

Core functions include:

  • Supporting RF energy transfer into the process chamber
  • Supporting stable plasma generation
  • Maintaining controlled electrical field distribution
  • Supporting process repeatability and uniformity
  • Contributing to stable chamber operating conditions
  • Supporting uptime through reliable plasma-facing performance

In many TEL plasma-processing platforms, the electrode operates alongside focus rings, ground rings, ESC assemblies, inner cells, chamber shields, and other plasma-facing consumables to support overall process stability.

Design and performance characteristics

RF energy distribution and plasma stability

The electrode supports controlled plasma generation.

Key performance characteristics include:

  • Stable RF power coupling
  • Consistent electrical field distribution
  • Reliable plasma ignition characteristics
  • Reduced process variability
  • Contribution to wafer-to-wafer consistency

Semiconductor process control rests on stable electrical performance.

Integrated pin configuration

The integrated pin design supports reliable chamber integration.

Performance attributes may include:

  • Secure electrical connectivity
  • Stable assembly positioning
  • Reliable interface performance
  • Reduced risk of electrical discontinuity
  • Support for repeatable maintenance outcomes

Reliable connectivity helps maintain chamber stability and uptime.

Plasma-facing surface performance

Material integrity directly affects chamber reliability.

Durability characteristics may include:

  • Resistance to plasma-induced erosion
  • Stable performance under thermal cycling
  • Reduced susceptibility to surface degradation
  • Reliable operation under continuous process exposure
  • Support for long-term chamber qualification

Surface condition plays a substantial role in contamination control and process consistency.

Integration with related chamber hardware

The 3D10-250316-11 may operate alongside related chamber components including:

  • Focus rings
  • Ground rings
  • ESC hardware
  • Inner cell assemblies
  • Chamber shields
  • Plasma-facing silicon consumables

Together these components support chamber stability and process repeatability.

Impact on tool performance, yield, and uptime

The 3D10-250316-11 can directly influence chamber performance and equipment availability.

Potential impacts of wear or degradation include:

  • Plasma instability
  • Process non-uniformity
  • RF coupling inconsistencies
  • Increased particle generation risk
  • Chamber conditioning drift
  • Higher defect exposure
  • Reduced equipment availability

Replacing a worn electrode can help restore plasma stability and improve process repeatability.

Common failure modes and diagnostic indicators

Plasma-facing surface erosion

Continuous plasma exposure gradually affects electrode performance.

Indicators include:

  • Surface erosion patterns
  • Material loss over time
  • Plasma instability
  • Chamber performance drift
  • Reduced process consistency

Electrical performance degradation

Long-term RF exposure may affect electrical characteristics.

Symptoms may include:

  • RF tuning instability
  • Plasma ignition difficulties
  • Increased matching network adjustments
  • Process repeatability concerns
  • Chamber qualification failures

Particle generation and surface degradation

Wear progression may affect contamination control.

Indicators include:

  • Increased particle counts
  • Defect-related excursions
  • Chamber cleanliness concerns
  • More frequent maintenance intervals
  • Reduced process stability

Failure to replace worn electrodes may contribute to increased wear on associated chamber consumables.

Installation and maintenance best practices

To support best performance:

  • Follow OEM-approved handling procedures
  • Inspect plasma-facing surfaces before installation
  • Verify pin integrity and electrical connectivity
  • Confirm proper seating and orientation
  • Evaluate adjacent chamber consumables during maintenance
  • Inspect for erosion during PM intervals
  • Perform chamber qualification after replacement
  • Confirm stable process conditions before production return

OEM part number and compatibility

The 3D10-250316-11 (U1) Electrode with Pin is an OEM-referenced TEL component.

Key considerations:

  • Must match chamber architecture requirements
  • Electrical and dimensional compatibility are critical
  • Verify process compatibility before installation
  • Confirm integration with surrounding chamber hardware
  • Evaluate associated wear components during maintenance

OEM P/N: 3D10-250316-11 (U1) ESCT P/N: ES7099-110 Part Type: 2nd Source NEW OEM: TEL

Why source from ESCT Fab Support

ESCT advantages

  • OEM-aligned form, fit, and functional verification
  • Quality-controlled manufacturing and inspection processes
  • Verified subsystem compatibility support
  • Faster availability versus OEM lead times
  • Reduced Mean Time To Repair (MTTR)
  • Expertise in semiconductor plasma-facing components
  • Cost-effective second-source procurement strategies

Maintaining inventory of the ES7099-110 / 3D10-250316-11 can reduce downtime exposure and improve maintenance readiness.

Frequently asked questions

1. What does the 3D10-250316-11 electrode do?

It transfers RF energy into the process chamber to generate and sustain plasma used in semiconductor manufacturing processes.

2. Why is an electrode important in plasma-processing equipment?

The electrode directly influences plasma stability, electrical field distribution, process repeatability, and wafer yield.

3. What is the purpose of the integrated pin?

The pin supports electrical connectivity and proper integration with associated chamber assemblies.

4. What are signs the electrode may need replacement?

Common indicators include:

  • Surface erosion
  • Plasma instability
  • RF matching issues
  • Process drift
  • Increased particle counts
  • Chamber qualification failures

5. Can electrode wear affect process uniformity?

Yes. Surface degradation can alter plasma behavior and affect process consistency across the wafer.

6. Can a worn electrode contribute to contamination?

Yes. Plasma-facing erosion may increase particle generation and defect risks.

7. Can this component affect yield?

Yes. Plasma instability and contamination-related issues can directly impact wafer quality and production yield.

8. How are electrode issues typically diagnosed?

Issues are commonly identified through PM inspections, RF diagnostics, plasma performance monitoring, particle trend analysis, and chamber qualification results.

9. Does replacement require chamber qualification afterward?

Yes. Chamber qualification and process verification should be completed after electrode replacement.

10. What happens if the wrong electrode is installed?

Incorrect electrical or dimensional characteristics may affect plasma performance, chamber compatibility, and process outcomes.

11. Is this an original OEM TEL part?

No. This product is supplied as ESCT P/N ES7099-110, a 2nd Source NEW OEM-compatible replacement aligned with the original TEL component requirements.

12. Is compatibility verification important before ordering?

Yes. Chamber configuration, electrical requirements, dimensions, and process compatibility should always be confirmed.

13. Can ESCT verify compatibility before shipment?

Yes. ESCT supports compatibility verification based on equipment and application requirements.

14. Are related TEL plasma-facing consumables available as well?

Depending on availability, associated focus rings, ground rings, shields, inner cells, and other chamber consumables may also be supported.

15. Why are electrodes considered critical process components?

Because they directly influence plasma formation and chamber performance, tying them to process control, yield, and equipment uptime.

Summary

The 3D10-250316-11 (U1) Electrode with Pin is a mission-critical plasma-facing component that supports RF energy distribution, plasma generation, and repeatable semiconductor process performance in TEL systems.

Its condition can directly influence plasma stability, contamination control, equipment uptime, and wafer yield.

Sourcing through ESCT Fab Support as ES7099-110 provides a verified 2nd Source NEW OEM-compatible replacement backed by semiconductor-focused expertise, quality verification, and responsive supply support.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250316-11(U1). It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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