2L10-252608-11
ELECTRODE,IN ST(NEST-CEN)V2

Inner centre nest electrode V2 (OEM P/N 2L10-252608-11), silicon cathode electrode for TEL 300 mm plasma etch systems

ESCT Fab Support P/N ES7099-192, Tokyo Electron (TEL) cathode electrode assembly, 2nd source new

The Inner Centre Nest Electrode V2, carried under TEL OEM part number 2L10-252608-11 and ESCT Fab Support part number ES7099-192, is a cathode-class electrode used in the lower assembly of Tokyo Electron 300 mm plasma etch process chambers. The raw part descriptor, “ELECTRODE, IN ST (NEST-CEN) V2”, identifies it as the inner, centre-region electrode that nests into the cathode stack and forms part of the powered, RF-driven surface beneath the wafer. The “V2” suffix denotes a revised generation of the electrode geometry, reflecting an engineering update to the original design while retaining the same mounting interface and electrical role.

In a capacitively coupled plasma etch chamber, the cathode is the lower electrode that supports the wafer and couples RF energy into the discharge. Centre and inner electrode segments such as this one sit within the heart of that assembly, directly under or immediately adjacent to the central wafer area. Their condition governs how cleanly and uniformly RF power is delivered to the centre of the wafer, and how predictably the plasma sheath develops across the radius. Because it operates at the powered, plasma-facing boundary of the chamber, this electrode is a true consumable: it is continuously exposed to ion bombardment, reactive species and thermal cycling.

Engineers responsible for etch process control and chamber matching treat the centre nest electrode as a key contributor to centre-to-edge uniformity, etch rate stability and particle performance. A worn, eroded or contaminated electrode shifts the local electric field and erodes the carefully tuned balance between the centre and edge regions of the wafer, making it a planned replacement item within preventive maintenance schedules.

Functional role of the centre nest electrode in TEL 300 mm etch platforms

As an inner, centre-positioned cathode electrode, this component performs several interdependent functions within the lower electrode assembly of a TEL plasma etch chamber:

• Couples RF power into the centre region of the discharge, establishing the powered surface against which the plasma sheath forms beneath the central wafer area.
• Defines the local electric field profile that, together with edge components such as focus and edge rings, sets the centre-to-edge etch uniformity signature of the chamber.
• Provides a low-impedance RF return and ground reference path consistent with the rest of the cathode stack, helping to stabilise impedance matching.
• Nests precisely into the cathode assembly, maintaining controlled gaps and concentricity with surrounding electrode and insulator components.
• Presents a sacrificial, process-compatible surface to the plasma so that ion bombardment erodes a planned consumable rather than fixed chamber hardware.
• Contributes to thermal continuity across the central electrode region, supporting consistent wafer-centre temperature and reaction conditions.

Material and process performance

Plasma-facing material behaviour

Cathode electrodes of this type are manufactured from high-purity, process-grade electrode material selected for controlled erosion and low contamination, characteristically high-resistivity silicon or an equivalent process-compatible conductor used for powered electrode surfaces in fluorine- and chlorine-based etch chemistries. The material must erode predictably under ion bombardment without shedding particles or introducing metallic contamination into the discharge.

• High material purity to avoid introducing mobile metallic or particulate contaminants onto the wafer.
• Controlled bulk resistivity and surface finish to support repeatable RF coupling and field shaping.
• Resistance to chemical attack from the reactive halogen species present in the etch chemistry.
• Predictable, slow erosion characteristics so that consumption tracks linearly with RF hours.

Dimensional and interface accuracy

Because the electrode nests into the centre of the cathode stack, its dimensional accuracy is as critical as its material. Flatness, thickness and the seating interface determine the gaps and contact pressure that, in turn, define electric field continuity and thermal contact across the central electrode region.

• Tight flatness and parallelism to maintain a uniform gap with adjacent components.
• Controlled thickness so the powered surface sits at the correct plane relative to the wafer.
• Concentric nesting features that preserve radial symmetry of the field.
• Clean, burr-free mating surfaces for reliable electrical and thermal contact.

Impact on tool performance and yield

Because it sits at the powered centre of the etch chamber, the condition of this electrode propagates directly into wafer-level results and fab productivity:

• Centre-to-edge etch uniformity drifts as the centre electrode erodes and the local field changes.
• Etch rate and critical-dimension control at the wafer centre become harder to hold within specification.
• Particle counts rise if the surface develops flaking, micro-cracking or redeposited films.
• Chamber-to-chamber matching degrades, complicating recipe portability across a fleet of tools.
• RF impedance and match-point stability suffer, leading to power excursions and reduced repeatability.
• Unplanned failures cause downtime, scrapped wafers and disrupted preventive-maintenance cadence.

Common wear and failure modes

Erosion and surface recession

The dominant wear mechanism is gradual erosion of the plasma-facing surface under continuous ion bombardment. As material is sputtered away, the electrode thins and the centre-region field profile shifts, slowly moving the chamber away from its qualified uniformity window until replacement is required.

Cracking, flaking and particle generation

Thermal cycling and localised hot spots can drive micro-cracking, while redeposited etch by-products build films that later flake. Both pathways release particles onto the wafer, causing defect excursions and, in severe cases, arcing at compromised surfaces.

Contact and seating degradation

Loss of intimate contact at the nesting interface, from contamination, oxidation or distortion, raises local impedance and impairs thermal transfer. This shows up as unstable RF match behaviour, hot spots and inconsistent centre etch performance.

Installation and replacement guidance

Replacement should follow the relevant TEL maintenance procedure and be performed by trained personnel under full lockout/tagout and contamination-control discipline. The following sequence summarises good practice:

• Vent the chamber, isolate RF, gas and thermal services, and apply lockout/tagout before opening the lower assembly.
• Disassemble the cathode stack in the prescribed order to expose the centre nest electrode, noting orientation and the position of any surrounding rings and insulators.
• Remove the worn electrode and inspect adjacent seating surfaces, contacts and insulators for erosion, contamination or damage.
• Clean mating surfaces per procedure and verify they are flat, dry and free of particles, residue and oxidation.
• Install ES7099-192 with clean, powder-free gloves, observing correct orientation and seating it fully and concentrically into the nest.
• Reassemble the stack to specified torque and gap settings, then restore services and pump down with the appropriate leak and integrity checks.
• Season the chamber and run qualification or marathon wafers, confirming etch rate, uniformity, particle and RF match data before returning to production.

Spare parts strategy for TEL plasma etch consumables

Cathode electrodes are recurring consumables, so a disciplined spares strategy protects both uptime and yield. ESCT Fab Support helps fabs secure dependable, cost-effective supply of parts such as ES7099-192 with the following advantages:

• Second-source new parts verified to the form, fit and function of the original TEL component.
• A practical alternative to sole-source procurement, easing single-supplier risk and pricing pressure.
• Clear cross-referencing between the TEL OEM number 2L10-252608-11 and ESCT P/N ES7099-192 for confident ordering.
• A typical lead time of 4–5 weeks, supporting planned preventive-maintenance scheduling and buffer stocking.
• Support for fleet standardisation and chamber matching by maintaining consistent consumable supply.
• Technical guidance on identification, condition and application to reduce ordering errors.

Frequently asked questions

What exactly is this part and where does it fit?

It is the inner, centre-region cathode electrode (V2 revision) that nests into the lower electrode assembly of a TEL 300 mm plasma etch chamber. It forms part of the powered, plasma-facing surface beneath the central wafer area and helps shape RF coupling and etch uniformity at the wafer centre.

Is this an original TEL OEM part?

No. ES7099-192 is supplied as a second-source new part. It is a new, OEM-compatible component manufactured and verified to match the form, fit and function of the original TEL part 2L10-252608-11, but it is not an original OEM part and is not sold as one.

What does the “V2” designation mean?

“V2” indicates the second-generation revision of this electrode geometry, reflecting an engineering update from the original design. It corresponds to the configuration carried under OEM number 2L10-252608-11; confirm your chamber configuration when ordering to get the correct revision.

How often does the centre nest electrode need replacing?

As a plasma-exposed consumable, replacement interval depends on RF hours, process chemistry, power levels and particle and uniformity limits. Most fabs replace it on a preventive-maintenance schedule driven by erosion and qualification data rather than waiting for failure.

What is the lead time for ES7099-192?

The typical lead time is 4–5 weeks. Because this is a recurring consumable, we recommend holding buffer stock and aligning orders with your preventive-maintenance cadence to avoid unplanned downtime.

How do I confirm this is the right part for my tool?

Cross-reference the TEL OEM number 2L10-252608-11 and the ESCT number ES7099-192 against your chamber bill of materials and revision. Our team can assist with identification to confirm the part matches your specific TEL etch chamber configuration before you order.

Summary

The Inner Centre Nest Electrode V2 (TEL 2L10-252608-11 / ESCT ES7099-192) is a cathode-class electrode that nests into the centre of the lower electrode assembly in TEL 300 mm plasma etch chambers. It couples RF power into the wafer-centre region, helps define centre-to-edge uniformity and provides a controlled, sacrificial plasma-facing surface. As a consumable subject to erosion, cracking and contact degradation, it is best managed through scheduled replacement, careful installation and reliable spares supply. ESCT Fab Support offers it as a second-source new part with clear OEM cross-referencing and a 4–5 week lead time to keep your etch tools qualified and productive.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252608-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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