3D10-250316-11-M
CEL,INNER(1.75-WITH PIN)

Inner cathode electrode, 1.75′ with pin (OEM P/N 3D10-250316-11-M), silicon cathode consumable for TEL 300 mm plasma etch systems

ESCT P/N ES7099-075, inner CEL cathode electrode for Tokyo Electron (TEL) etch process chambers

The Inner Cathode Electrode (CEL) is a precision plasma-facing consumable used in Tokyo Electron (TEL) 300 mm dielectric and conductor etch process chambers. Designated by OEM part number 3D10-250316-11-M and supplied by ESCT Fab Support under part number ES7099-075, this is the inner segment of the powered cathode (CEL) assembly, the lower electrode hardware that couples RF energy into the plasma directly beneath the wafer. The “1.75″ with pin” designation refers to the component’s nominal diametric feature and the integrated alignment/contact pin that registers the inner electrode against the surrounding cathode structure and establishes a defined electrical interface.

In a TEL etch chamber, the cathode electrode is the heart of the capacitively coupled discharge. It is the part on which the wafer (or the components immediately surrounding it) sits, and through which the RF bias is delivered to the plasma sheath. The inner CEL element occupies the central region of this stack, defining the powered area closest to the wafer centre and forming part of the controlled electrode geometry that shapes sheath uniformity from centre to edge. Because it is fabricated from high-purity silicon, it participates chemically in the process as well as electrically, acting as a sacrificial silicon source that helps balance fluorine chemistry within the discharge.

As a directly plasma-exposed consumable, the inner cathode electrode erodes over its service life and is a scheduled replacement item during preventive maintenance. Sourcing a dimensionally and materially correct inner CEL is required: deviations in silicon purity, resistivity, flatness or pin geometry translate directly into shifts in etch rate, uniformity and on-wafer particle counts.

Functional role of the inner cathode electrode in TEL etch platforms

The inner CEL works in concert with the outer cathode ring, focus/edge rings and the underlying RF feed and clamping hardware. Its responsibilities span the electrical, chemical and mechanical domains of the lower-electrode stack:

• Couples RF bias power into the plasma across the central electrode area, setting ion energy and directionality at the wafer surface.
• Defines the powered electrode geometry in the wafer-centre region, contributing to centre-to-edge sheath and etch-rate uniformity.
• Provides a high-purity silicon surface that is consumed by the discharge, scavenging free fluorine and helping stabilise etch chemistry and selectivity.
• Establishes a defined RF return and contact path through its integrated pin and seating interface to the surrounding cathode structure.
• Maintains a flat, controlled plane that supports consistent sheath thickness and avoids local field distortion above the wafer.
• Acts as a serviceable, sacrificial element that protects more permanent and costly cathode base hardware from direct plasma erosion.

Material and process performance

Inner cathode electrodes are manufactured from high-purity silicon chosen for its electrical behaviour in the discharge and its predictable, low-contamination erosion. The combination of material grade and machined geometry governs both how the part performs in process and how long it lasts.

Silicon purity and resistivity

The electrical and chemical performance of the CEL depends on tightly controlled silicon characteristics. Out-of-specification material shifts RF coupling and introduces metallic or particulate contamination onto the wafer.

• High-purity silicon minimises trace-metal contamination of the wafer surface and the chamber environment.
• Controlled resistivity sets the RF coupling behaviour of the electrode and keeps bias delivery repeatable from part to part.
• Uniform bulk properties give a steady, predictable erosion rate, supporting consistent process drift across the consumable’s life.
• Low defect density reduces the risk of micro-flaking that would generate on-wafer particles.

Surface finish, flatness and pin geometry

Mechanical precision is as critical as material grade. Flatness governs sheath uniformity, while the pin and seating surfaces define the electrical contact to the cathode base.

• A controlled, lapped surface finish promotes uniform plasma loading and slows preferential localised erosion.
• Tight flatness and parallelism maintain a consistent sheath plane above the wafer centre.
• Precise 1.75″ dimensional control gives correct mating with the surrounding inner cathode geometry.
• Accurate pin form and position guarantee a low-resistance, repeatable RF contact and correct rotational/radial registration.

Impact on tool performance and yield

Because the inner CEL sits at the centre of the powered electrode, its condition feeds directly into the metrics that fabs watch most closely. A worn, contaminated or incorrectly specified electrode shows up quickly on the wafer and at the parametric tester:

• Centre-region etch-rate drift and degraded within-wafer uniformity as the electrode erodes.
• Shifts in selectivity and profile control caused by changes in the fluorine-scavenging silicon surface.
• Rising particle counts and defect adders from flaking or eroded silicon, reducing die yield.
• RF instability, reflected-power excursions or arcing if the pin contact degrades.
• Increased unscheduled downtime and chamber re-qualification cycles when failures are not anticipated.
• Metallic contamination risk to the wafer if a non-conforming material grade is fitted.

Common wear and failure modes

Plasma erosion and thinning

Continuous ion bombardment steadily sputters and chemically etches the silicon surface, thinning the electrode and altering its geometry. As thickness and surface area change, RF coupling and the fluorine balance shift, driving gradual process drift until the part reaches its replacement limit.

Surface roughening, pitting and particle generation

Non-uniform erosion, polymer build-up and thermal cycling roughen and pit the silicon. Loose flakes and micro-particles detach from these features and land on the wafer, raising defect counts long before the electrode is fully consumed.

Pin and contact degradation

The integrated pin and seating interface are subject to wear, oxidation and contamination. A degraded contact raises local resistance, which can produce RF instability, hot spots or arcing, events that damage the electrode and the surrounding cathode hardware and corrupt process results.

Installation and replacement guidance

The inner CEL is replaced during scheduled preventive maintenance, following the tool owner’s documented procedure. The following sequence summarises good practice; always defer to the OEM service manual and your site’s safety protocols:

• Vent the chamber, lock out RF and gas supplies, and confirm the cathode is at a safe temperature before opening.
• Remove the surrounding focus/edge rings and outer cathode components needed to access the inner electrode, noting their order and orientation.
• Carefully lift out the old inner CEL, inspecting the cathode base, contact landing and pin bore for erosion, residue or damage.
• Clean the seating and contact surfaces per the OEM procedure so the new electrode makes a clean, low-resistance interface.
• Fit the new ES7099-075 electrode using clean, powder-free gloves, aligning the pin to its registration feature and seating it fully and flat.
• Reinstall the outer cathode parts and rings in reverse order, verifying correct seating and electrical contact throughout.
• Pump down, perform leak and RF checks, then run season/conditioning and qualification recipes before returning the chamber to production.

Spare parts strategy for TEL etch consumables

Cathode electrodes are recurring, wear-driven consumables, so a sound stocking and sourcing strategy protects both uptime and cost per wafer. ESCT Fab Support helps fabs and refurbishers keep TEL etch chambers running with compatible inner CEL electrodes that match the original form, fit and function:

• Second-source, new components offered as a cost-effective alternative to OEM list pricing.
• High-purity silicon and dimensional control verified to match the original electrode specification.
• Clear cross-reference between ESCT P/N ES7099-075 and OEM P/N 3D10-250316-11-M for easy ordering.
• A typical lead time of 4–5 weeks, supporting planned preventive-maintenance scheduling and buffer stocking.
• Consistent part-to-part quality to keep chamber-to-chamber matching tight across a fleet.
• Responsive technical support to confirm fit against your specific chamber configuration.

Frequently asked questions

What does the inner CEL cathode electrode actually do?

It is the inner segment of the powered lower electrode in a TEL etch chamber. It couples RF bias into the plasma at the wafer-centre region, helps define etch uniformity, and acts as a sacrificial high-purity silicon surface that scavenges fluorine to stabilise the etch chemistry.

Is this an original OEM part?

No. This is a second-source, new component supplied by ESCT Fab Support as an OEM-compatible alternative to TEL part number 3D10-250316-11-M. It is not an original OEM part, but it is manufactured and verified to match the original part’s form, fit and function.

What does the “1.75′ with pin” description mean?

It refers to the electrode’s nominal 1.75-inch dimensional feature and its integrated alignment/contact pin. The pin registers the inner electrode correctly within the cathode stack and establishes a defined, low-resistance RF contact to the surrounding hardware.

How do I know when the electrode needs replacing?

Replacement is usually driven by accumulated RF hours or wafer counts in the PM schedule, and confirmed by physical inspection. Visible thinning, roughening, pitting or contact wear, together with drift in etch rate, uniformity or particle counts, indicate the electrode has reached the end of its useful life.

Will fitting a non-conforming electrode affect my wafers?

Yes. Incorrect silicon purity, resistivity, flatness or pin geometry can shift RF coupling, change selectivity, raise particle and metal contamination, and degrade uniformity. That is why ESCT verifies material grade and dimensions against the original specification.

What is the lead time and how do I order?

The typical lead time is 4–5 weeks. Order using ESCT P/N ES7099-075, cross-referenced to OEM P/N 3D10-250316-11-M, and our team can confirm compatibility with your specific TEL chamber configuration before you commit.

Summary

The Inner Cathode Electrode (ESCT P/N ES7099-075, OEM P/N 3D10-250316-11-M) is a high-purity silicon consumable at the heart of the powered lower electrode in TEL 300 mm plasma etch chambers. It delivers RF bias to the wafer-centre region, supports etch uniformity, and scavenges fluorine to stabilise the discharge, while its 1.75″ geometry and integrated pin give correct fit and reliable electrical contact. As a wear item, it directly influences etch rate, uniformity, selectivity and particle performance, making correct material grade and dimensional accuracy necessary. ESCT supplies a second-source, new, fully verified alternative with a 4–5 week lead time to keep your etch tools qualified and productive.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250316-11-M. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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