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The inner silicon cathode electrode supplied under ESCT part number ES7099-191 (TEL OEM P/N 2L10-252609-11) is a high-purity, RF-driven electrode component used in the lower-electrode assembly of Tokyo Electron (TEL) 300 mm plasma etch process chambers. As a cathode-type consumable, it sits on the powered side of the chamber and forms part of the surface that directly faces the plasma immediately below the wafer plane. The “inner” designation and the nesting (NEST) configuration reference in its name indicate that this electrode is the central, inner-zone member of a segmented lower-electrode arrangement, where an inner electrode nests within or alongside an outer ring or frame to create a continuous, electrically defined surface beneath and around the production wafer.
In a TEL etch chamber, the cathode electrode is far more than a structural plate. It is an active part of the RF circuit, an erosion-controlled surface that defines the chemistry at the wafer edge and centre, and a thermal and electrical boundary that shapes the sheath above the wafer. Because it is fabricated from process-grade silicon (or a closely matched high-purity material), it participates chemically in fluorine- and chlorine-based etch processes, eroding in a controlled, predictable manner rather than sputtering metallic contamination into the chamber.
As a plasma-exposed consumable, this electrode is a scheduled-replacement item. Its surface condition, flatness and electrical contact integrity drift over chamber hours, and once erosion or contact degradation crosses a threshold, etch rate, uniformity and particle performance all suffer. Keeping a qualified replacement on hand is therefore central to sustaining tool availability and wafer yield.
The inner cathode electrode performs several simultaneous duties on the powered side of the etch chamber. It is part of the same assembly that holds and references the wafer, so its behaviour is coupled directly to process result. Its principal functions include:
High-purity silicon is chosen for cathode electrodes precisely because of how it interacts with fluorine- and chlorine-based plasmas. It erodes by forming volatile reaction products that are pumped away, rather than redepositing as particles or injecting metallic contamination. Tight control of resistivity, crystal orientation and trace-metal content keeps the electrode electrically consistent and contamination-free.
Because the inner electrode nests against adjacent powered members and contacts parts beneath it, its flatness, machined profile and surface finish must match the OEM geometry closely. Small deviations change the gap to surrounding parts, disturb RF coupling and create thermal-contact variation across the wafer.
The condition of the inner cathode electrode propagates directly into measurable process outcomes. As it wears or loses electrical integrity, the chamber drifts away from its qualified operating window:
Continuous ion bombardment and chemical attack steadily consume the silicon surface. As the electrode thins and its surface roughens, the local sheath and erosion rate change, pushing etch performance out of specification. This is the dominant, expected wear mechanism that defines the part’s service life.
Thermal cycling, mechanical stress during handling and progressive thinning make silicon electrodes vulnerable to cracking and edge chipping. Once a crack forms, it both compromises RF behaviour and becomes a particle source, contaminating wafers and forcing an immediate replacement.
The electrode relies on clean, consistent contact to its mating surfaces and adjacent nesting members to carry RF and return current. Oxidation, deposition build-up, particulate at the interface or warping degrade this contact, raising local impedance, creating arcing risk and disturbing power delivery to the inner zone.
Replacement should follow the TEL-approved procedure for the specific chamber and be carried out by trained personnel under cleanroom-compatible conditions. The general sequence is as follows:
Because the inner cathode electrode is a wear-driven consumable, fabs benefit from holding qualified stock and sourcing from a supplier that understands the form, fit and function requirements of TEL etch chambers. ESCT Fab Support offers:
It is the powered, inner-zone silicon electrode in the lower-electrode assembly. It couples RF energy into the plasma, defines the powered surface beneath and around the wafer’s inner region, and provides a sacrificial silicon surface that helps stabilise etch chemistry and ion flux.
No. This is supplied as a second-source, new part that is verified to match the original in form, fit and function. It is fully compatible with the applicable TEL chambers but is not an original OEM-branded component, and it provides a cost-effective alternative to OEM-only procurement.
It is manufactured from high-purity, process-grade silicon. This material erodes into volatile, pump-removable products under fluorine- and chlorine-based plasmas, keeping metallic contamination low and erosion behaviour predictable.
Replacement is driven by accumulated chamber hours and by indicators such as rising particle counts, drifting etch rate or uniformity, increased thinning or any visible cracking or chipping. Most fabs replace it on a scheduled PM interval qualified for their specific process.
The typical lead time for ES7099-191 is 4–5 weeks. We recommend factoring this into PM planning and holding appropriate buffer stock so a worn electrode never gates tool availability.
Handle it only with clean, powder-free gloves in a cleanroom-compatible environment, avoiding contact with the active silicon surface. Confirm the mating surfaces are clean and the electrode seats fully and squarely in its nesting position before closing the chamber and running qualification wafers.
The inner silicon cathode electrode (ESCT P/N ES7099-191, TEL OEM P/N 2L10-252609-11) is a critical, plasma-exposed consumable on the powered side of TEL 300 mm etch chambers. It couples RF power into the plasma, defines the inner-zone powered surface, and provides a high-purity sacrificial silicon surface that governs etch uniformity, ion energy and particle performance directly beneath the wafer. Because it wears through erosion, cracking and contact degradation, it is a planned-replacement item whose condition has an outsized effect on yield and tool uptime. Sourced as a second-source new part verified to form, fit and function, ES7099-191 offers fabs a reliable, cost-effective way to keep these chambers in their qualified process window.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252609-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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