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The Inner Step Nest-Chase Cathode Electrode V2 is the powered lower electrode element that sits at the heart of a Tokyo Electron (TEL) 300 mm plasma etch chamber. Catalogued under TEL OEM part number 2L10-252612-11 and supplied by ESCT Fab Support as ES7099-193, this component carries the RF energy that strikes and sustains the process plasma directly beneath the wafer. The “nest-chase” geometry refers to the machined seating and interlocking step profile that lets the inner electrode nest precisely into the surrounding cathode stack, while the “V2” designation marks a revised feature set over the original part.
In a typical TEL capacitively coupled etch chamber, the cathode assembly is layered: an inner powered electrode, a surrounding focus or edge ring, and an insulating quartz or ceramic frame that confines the discharge. This inner step electrode forms the central, high-flux region of that stack. It is continuously exposed to ion bombardment, reactive fluorine- and chlorine-based chemistries and the thermal cycling that accompanies every wafer pass, which is why it is treated as a scheduled consumable rather than a permanent fixture.
Because the electrode defines both the electrical boundary and part of the physical surface the plasma sees, its condition has a direct and measurable effect on etch rate, profile control and on-wafer particle counts. A worn, eroded or poorly seated electrode is one of the most common root causes of edge non-uniformity and chamber matching drift in high-volume manufacturing.
The inner step cathode electrode is simultaneously an electrical, thermal and process-surface component. It does not simply conduct RF, it shapes how that energy couples into the gas, how heat leaves the wafer region and how etch by-products are managed at the central electrode surface. Its principal functions include the following.
Cathode electrodes of this class are typically manufactured from high-purity silicon or fine-grain conductive material selected for controlled erosion behaviour in fluorine and chlorine plasmas. The intent is a surface that etches slowly and evenly, contributing minimal metallic contamination and shedding very few particles as it wears.
As the powered element, the electrode must present a stable, repeatable electrical interface to the matching network and a consistent thermal contact path to the underlying chuck or cooling structure. Variations in either area show up immediately as process drift.
Because this electrode sits at the centre of the plasma and carries the RF that drives the etch, its state propagates straight to the wafer. A healthy, correctly seated electrode keeps a tool inside its process window; a degraded one drives the kind of slow, hard-to-diagnose drift that erodes yield over many lots.
Continuous ion bombardment gradually thins the electrode and roughens its surface. As material is removed, the gap and field geometry shift, etch rate at the centre drifts and the part eventually falls outside its usable thickness window, calling for replacement before it begins to influence the layers beneath it.
Thermal cycling and mechanical stress at the nest-chase step can initiate cracks or chips, particularly around edges and seating features. Once the surface fractures, it becomes a particle source that drives sudden defect excursions and forces an unplanned chamber-down event.
If the electrode does not nest flush, or if its contact surfaces oxidise or accumulate residue, RF coupling and the return path become inconsistent. The result is reflected-power instability, arcing risk and centre-to-edge non-uniformity that can be mistaken for a recipe or match-network fault.
Replacement should follow the equipment owner’s TEL maintenance procedure and be carried out by trained personnel under proper contamination control. The sequence below is a general guide and does not replace the tool-specific work instruction.
Cathode electrodes are scheduled-replacement consumables, so availability and predictable quality matter as much as the part itself. ESCT Fab Support supplies ES7099-193 as a 2nd source new, OEM-compatible alternative to TEL 2L10-252612-11, giving fabs a second sourcing route without compromising fit or function.
It is the powered lower electrode at the centre of the TEL etch chamber. It delivers RF energy into the gas to sustain the plasma, shapes the sheath and field over the central wafer area, and serves as a controlled sacrificial process surface, all while nesting precisely into the surrounding cathode stack.
No. ES7099-193 is supplied as a 2nd source new, OEM-compatible part. It is not an original Tokyo Electron OEM component, but it is verified to match the form, fit and function of OEM 2L10-252612-11 so it can be used as a direct equivalent.
Typical symptoms include centre-to-edge etch rate drift, critical dimension shifts, rising particle counts and reduced chamber matching. RF instability or growing reflected power can also point to a worn or poorly seated electrode rather than a recipe issue.
The indicative lead time is 4-5 weeks. Building that interval into the preventive maintenance plan, alongside a small buffer stock, helps avoid unplanned downtime when an electrode reaches the end of its usable life.
Keep it in its protective packaging until installation, handle only with clean powder-free gloves and avoid touching the process surface. Store in a clean, dry, controlled environment to prevent contamination, oxidation of contact surfaces and mechanical damage to the seating step.
When installed correctly and verified against baseline, a part held to the original form, fit and function should support matching across like tools. As with any cathode replacement, run the prescribed conditioning recipe and confirm etch rate, uniformity and RF behaviour before returning the chamber to production.
The Inner Step Nest-Chase Cathode Electrode V2 (TEL OEM P/N 2L10-252612-11, ESCT P/N ES7099-193) is the RF-driven lower electrode that ignites and sustains the plasma in TEL 300 mm etch chambers. It governs ion energy, sheath uniformity, the RF return path and central process-surface integrity, making it a primary lever on etch uniformity, particle performance and chamber matching. As a scheduled consumable, it benefits from predictable sourcing, careful handling and disciplined replacement. ESCT Fab Support offers it as a 2nd source new, OEM-compatible part with a 4-5 week indicative lead time to keep critical etch tools productive.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252612-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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