FOCUS RING,LAB 360-T4.5-306

PART DETAILS

2L10-251514-11
FOCUS RING,LAB 360-T4.5-306

OEM P/N: 

2L10-251514-11

ESCT P/N: 

ES7099-047

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring LAB 360-T4.5-306 (OEM P/N 2L10-251514-11), edge-confinement focus ring for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-047, Tokyo Electron (TEL) compatible focus ring consumable for 300 mm dielectric and conductor etch chambers

The TEL focus ring identified as LAB 360-T4.5-306, OEM part number 2L10-251514-11, is a circular plasma-facing consumable that surrounds the 300 mm wafer at the upper periphery of a Tokyo Electron etch electrostatic chuck. Sometimes referred to as an edge ring, it sits concentrically around the wafer edge and forms the immediate boundary between the silicon being processed and the surrounding chamber hardware. Its primary job is to extend the plasma sheath outward beyond the physical wafer edge so that the last few millimetres of usable die receive the same ion flux and angular distribution as the wafer centre.

In a TEL 300 mm plasma etch chamber, the focus ring is one of the most exposed components in the entire process kit. It is bombarded continuously by energetic ions and reactive radicals throughout every etch step, and because it lies directly in the path of the RF field it also helps shape the electrical environment at the wafer boundary. The “T4.5” and “306” descriptors in the LAB 360 designation relate to the ring’s profile and dimensional family, which is engineered to match a specific chuck geometry and process recipe so that sheath continuity across the wafer edge is preserved.

Because it is a sacrificial part that erodes under ion bombardment, the focus ring is replaced on a defined preventive-maintenance schedule. As it thins, the local sheath geometry shifts, edge etch rate and feature tilt drift, and yield at the wafer perimeter degrades. Keeping a qualified, dimensionally accurate replacement such as ES7099-047 on hand is therefore central to maintaining edge uniformity and overall chamber availability.

Functional role of the focus ring in Tokyo Electron etch platforms

The focus ring performs several interlocking functions that together determine how well the outermost zone of the wafer is processed. Far from being a passive spacer, it actively participates in plasma confinement, sheath shaping and RF coupling at the wafer edge.

  • Extends the plasma sheath radially outward from the wafer edge so that edge die see the same ion energy and incidence angle as central die.
  • Maintains a continuous, planar sheath boundary across the wafer-to-ring transition, minimising the field bending that causes edge feature tilt.
  • Confines the plasma over the active process area and protects the underlying chuck periphery and ceramic from direct ion attack.
  • Provides part of the RF return and capacitive coupling path at the wafer boundary, influencing local bias and sheath voltage.
  • Sets the thermal and physical termination of the wafer edge, helping stabilise edge temperature and clamping behaviour.
  • Acts as a sacrificial erosion surface that absorbs ion bombardment in preference to permanent chamber hardware.

Material and process performance

Focus rings for TEL 300 mm etch chambers are manufactured from process-grade materials selected for low contamination and predictable erosion behaviour under aggressive fluorine- and chlorine-based chemistries. Depending on the process step the ring serves, focus rings in this class are typically produced from high-purity silicon, silicon carbide or quartz, each chosen to be chemically compatible with the films being etched and the plasma chemistry in use.

Material selection and purity

The ring material must combine low sputter yield, high chemical resistance and low metallic-impurity content so that erosion products do not become a particle or contamination source on the wafer surface. Material purity and microstructure are tightly controlled so that as the ring erodes, it does so uniformly rather than spalling or generating flakes.

  • High-purity bulk material to limit metallic contamination transfer to the wafer.
  • Controlled grain structure and density for predictable, uniform erosion.
  • Chemical compatibility with fluorocarbon, oxygen and chlorine-based etch plasmas.
  • Low sputter yield to extend useful service life between replacements.

Dimensional and surface accuracy

Sheath continuity at the wafer edge depends on the ring’s height, inner diameter, step profile and flatness matching the chuck and wafer plane to tight tolerances. Even small dimensional deviations alter the gap between wafer and ring or change the initial ring-top elevation relative to the wafer, shifting edge etch behaviour from the first wafer onward.

  • Precise inner diameter and step profile to set the correct wafer-to-ring relationship.
  • Controlled ring height so the top surface starts at the intended elevation relative to the wafer.
  • Tight flatness and parallelism for uniform seating on the chuck periphery.
  • Consistent surface finish to support reproducible erosion and clean seating.

Impact on tool performance and yield

Because the focus ring governs the electrical and physical environment at the wafer perimeter, its condition translates directly into edge die yield and chamber-to-chamber matching. A worn, mismatched or incorrectly seated ring is one of the most common root causes of edge non-uniformity excursions on TEL etch tools.

  • Edge etch rate uniformity and critical-dimension control across the outer wafer zone.
  • Feature profile and tilt angle in edge die, which depend on a planar, undistorted sheath.
  • Usable die count at the wafer perimeter and overall yield per wafer.
  • Particle performance, since an eroded or flaking ring becomes a defect source.
  • Chamber matching and recipe portability across tools running the same process.
  • Mean time between cleans and overall chamber availability.

Common wear and failure modes

As a front-line consumable, the focus ring degrades through predictable mechanisms that are tracked by RF hours, wafer count or measured erosion depth.

Erosion and thinning

Continuous ion bombardment gradually sputters material from the ring top, reducing its height. As the ring thins, the sheath at the wafer edge drops and bends inward, shifting edge etch rate and increasing feature tilt until the ring falls outside its qualified window and must be replaced.

Cracking and thermal stress

Repeated thermal cycling and RF stress can initiate cracks, particularly in brittle silicon or quartz rings or at seating points where stress concentrates. A cracked ring can shed particles, distort the local field and, in severe cases, fracture during handling or processing.

Particle generation and surface roughening

Late in life the eroded surface roughens and may develop redeposited films that flake. This raises particle counts on the wafer and can cause defect-driven yield loss well before the ring reaches its absolute erosion limit, making particle monitoring a key end-of-life indicator.

Installation and replacement guidance

Focus ring replacement is a routine but precision preventive-maintenance task. Follow the relevant TEL maintenance procedure and your fab’s contamination-control practices; the steps below summarise the typical sequence.

  • Vent the chamber, isolate RF and follow lockout procedures before opening the process module.
  • Remove the worn focus ring and inspect the underlying chuck periphery and any adjacent edge rings for erosion or residue.
  • Clean the seating surfaces per the maintenance procedure so the new ring beds flat and concentric.
  • Handle the new ring with clean, powder-free gloves or dedicated tooling, avoiding contact with the plasma-facing surface.
  • Seat the replacement ring squarely and concentrically, confirming correct orientation and full contact on the chuck.
  • Close the chamber, pump down, leak-check and run any required season or conditioning recipe.
  • Reset the ring’s RF-hour or wafer counter and qualify the chamber with edge uniformity and particle checks before returning to production.

Spare parts strategy for Tokyo Electron etch process kits

Focus rings are high-frequency consumables, so disciplined inventory planning has a direct effect on uptime and cost per wafer. Sourcing qualified replacements through ESCT Fab Support gives fabs a dependable alternative to single-source procurement.

  • Second-source, new parts verified to the form, fit and function of OEM P/N 2L10-251514-11.
  • Clear cross-referencing via ESCT P/N ES7099-047 for fast, accurate reordering.
  • Support for buffer-stocking of a critical PM consumable to protect chamber availability.
  • A typical lead time of 4-5 weeks, allowing structured replenishment against PM cycles.
  • Reduced dependence on a single supply channel for routine etch process kit parts.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the 300 mm wafer at the edge of the chuck and extends the plasma sheath outward beyond the wafer rim. This keeps ion flux and angle uniform across the outermost die, preserving edge etch uniformity and protecting the chuck periphery from ion attack.

Is this an original TEL OEM part?

No. This is a second-source, new part supplied by ESCT Fab Support as an OEM-compatible replacement for OEM P/N 2L10-251514-11. It is not an original Tokyo Electron part, but it is verified to match the original in form, fit and function.

How do I know when the focus ring needs replacing?

Replacement is normally driven by accumulated RF hours or wafer count, supported by measured erosion depth, edge uniformity drift and rising particle counts. When the ring thins past its qualified window or begins generating particles, it should be changed during the next scheduled PM.

What is this focus ring made from?

Focus rings in this class are produced from high-purity process materials such as silicon, silicon carbide or quartz, selected for low sputter yield, chemical resistance and low contamination. The exact material is matched to the chamber and process the ring is qualified for.

Why does a worn ring affect yield at the wafer edge?

As the ring erodes, the plasma sheath at the wafer edge lowers and bends inward, changing ion energy and angle on the outer die. This shifts edge etch rate, critical dimensions and feature tilt, reducing the number of good die at the perimeter.

What is the lead time and how do I order?

This focus ring is offered with a typical lead time of 4-5 weeks. Order using ESCT P/N ES7099-047, referencing TEL OEM P/N 2L10-251514-11, and consider buffer-stocking given its role as a frequently replaced consumable.

Summary

The TEL LAB 360-T4.5-306 focus ring (OEM P/N 2L10-251514-11, ESCT P/N ES7099-047) is a sacrificial edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By extending and shaping the plasma sheath at the wafer edge, it sustains uniform ion flux, controls edge critical dimensions and protects the underlying chuck. As a wear part, its erosion, cracking and particle behaviour directly affect edge yield and chamber matching, making timely replacement with a dimensionally accurate ring necessary. Supplied as a second-source, new component verified to OEM form, fit and function and available on a 4-5 week lead time, ES7099-047 helps fabs maintain etch process kit availability without sole reliance on a single supply source.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251514-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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