FOCUS RING(LAB),360-T4(320)

PART DETAILS

2L10-251061-21
FOCUS RING(LAB),360-T4(320)

OEM P/N: 

2L10-251061-21

ESCT P/N: 

ES7099-060

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring, LAB 360-T4 (320) (OEM P/N 2L10-251061-21), plasma edge confinement ring for TEL 300 mm etch systems

ESCT Fab Support P/N ES7099-060, 2nd source NEW replacement focus ring for Tokyo Electron (TEL) plasma etch chambers

The TEL Focus Ring identified by OEM part number 2L10-251061-21 is a consumable annular ring that sits at the outer periphery of the electrostatic chuck in a Tokyo Electron 300 mm plasma etch process chamber. The “LAB” descriptor and the “360-T4 (320)” designation point to a specific dimensional and material build of focus ring used to set the plasma sheath geometry at the wafer edge. As a circumferential component that surrounds the 300 mm wafer, it is one of the most directly process-influencing consumables in the chamber, because everything it does happens within a few millimetres of the device-bearing edge of the substrate.

In service, the focus ring is a sacrificial part. It is deliberately positioned in the path of the plasma and the accelerated ions so that it, rather than the chuck or the wafer carrier hardware, absorbs the bombardment that would otherwise distort the field at the wafer edge. Because it erodes during normal operation, it is replaced on a defined preventive maintenance cadence. The accuracy with which a replacement ring reproduces the original height, inner diameter, flatness and material composition therefore translates almost directly into edge die yield.

ESCT Fab Support supplies this focus ring under part number ES7099-060 as a 2nd Source NEW component, manufactured to match the form, fit and function of the original. It is intended as a cost-managed, supply-secure alternative to the OEM consumable for fabs that need to hold their etch process windows without being exposed to single-source lead times.

Functional role of the focus ring in TEL plasma etch platforms

The focus ring extends the effective electrical and physical surface of the wafer outward beyond its actual edge. By presenting a controlled surface at the same potential reference as the wafer, it keeps the plasma sheath flat and the ion trajectories vertical right up to the last ring of die. Its principal functions in a TEL etch chamber are as follows:

  • Extends the plasma sheath beyond the wafer edge so that the sheath does not bend inward and skew ion incidence on the outermost die.
  • Maintains vertical ion trajectories at the wafer periphery, preserving etch profile and critical dimension uniformity edge-to-edge.
  • Confines and shapes the plasma at the chuck periphery, supporting consistent radical and ion density across the full 300 mm field.
  • Provides a sacrificial bombardment surface that protects the electrostatic chuck and surrounding chamber hardware from direct ion erosion.
  • Contributes to the RF return and impedance environment at the wafer edge, helping keep edge coupling stable as the ring wears within its specified life.
  • Helps define the thermal boundary at the wafer edge, influencing edge temperature and therefore edge etch rate.

Material and process performance

Focus rings for TEL 300 mm etch chambers are produced from process-grade materials selected for plasma resistance, electrical behaviour and low particle generation. The 360-T4 (320) build represents a defined material and dimensional specification, and reproducing that specification faithfully is what allows a 2nd source ring to drop into an established process without re-tuning.

Material composition and plasma resistance

Depending on the application, focus rings of this class are manufactured from high-purity silicon, silicon carbide or quartz-family materials chosen to withstand fluorine- and chlorine-based etch chemistries. The key performance attributes are erosion resistance, controlled electrical characteristics and freedom from contaminant species that could migrate to the wafer.

  • High material purity to minimise metallic and particulate contamination of the wafer edge.
  • Resistance to physical sputtering and chemical attack from aggressive halogen plasmas.
  • Predictable, repeatable erosion behaviour so that ring life can be scheduled with confidence.

Dimensional accuracy and electrical matching

The height, inner diameter, flatness and surface finish of the ring set the sheath geometry at the wafer edge. Even small departures from specification shift the apparent edge of the plasma and change the etch result on the outer die, so dimensional fidelity is the most important single quality attribute.

  • Tight tolerance on ring height to keep the sheath plane correct relative to the wafer surface.
  • Accurate inner diameter and concentricity so the gap to the wafer edge is uniform around the full circumference.
  • Controlled flatness and seating to maintain consistent electrical and thermal contact with the chuck periphery.

Impact on tool performance and yield

Because the focus ring acts on the most yield-sensitive zone of the wafer, its condition has an outsized effect on chamber output. A correctly specified, in-life ring keeps the edge process within its window; a worn or out-of-spec ring degrades edge results long before any alarm is raised. The practical consequences include:

  • Edge die yield, which depends directly on profile and critical dimension control at the wafer periphery.
  • Etch rate and profile uniformity across the full 300 mm field, particularly the outer annulus.
  • Particle performance, since an eroded or cracked ring becomes a defect source that can contaminate the wafer.
  • Wafer-to-wafer and chamber-to-chamber repeatability, which matched consumables help preserve.
  • Mean time between cleans and overall chamber availability, both influenced by ring condition and replacement discipline.

Common wear and failure modes

As a sacrificial part the focus ring is expected to wear, but the way it wears and fails determines when it must be replaced and what it does to the process beforehand.

Erosion and height loss

Continuous ion bombardment gradually reduces the ring height and rounds its inner edge. As the ring thins, the sheath plane drops relative to the wafer and ion trajectories at the edge begin to tilt, shifting edge critical dimensions and tilting etch profiles on the outer die. This is the normal end-of-life mechanism and the reason ring height is tracked against a replacement limit.

Cracking and chipping

Thermal cycling, mechanical handling and material fatigue can produce cracks or chips, especially as the ring thins near end of life. Fractured material is a direct particle source and can cause sudden defect excursions, making careful handling and visual inspection at every PM necessary.

Surface roughening and deposit build-up

Plasma exposure roughens the ring surface and can leave polymer or by-product deposits, which alter local electrical and thermal behaviour and can flake off as particles. Roughening also changes erosion rate over time, so a ring left in service too long degrades edge uniformity progressively rather than abruptly.

Installation and replacement guidance

Focus ring replacement is a routine preventive maintenance task, but cleanliness and correct seating are critical because the part sits directly in the process path. The following sequence reflects good practice; always follow your facility’s approved procedure and the relevant TEL maintenance documentation.

  • Place the chamber in maintenance mode, vent to atmosphere following the approved sequence, and confirm RF and heater interlocks are safe.
  • Open the chamber and carefully lift out the worn focus ring, noting its orientation and inspecting the chuck periphery for residue or damage.
  • Clean the seating surface to specification, removing deposits so the new ring seats flat with correct thermal and electrical contact.
  • Unpack the new ES7099-060 ring with clean, powder-free gloves, handling it only at the edges and inspecting for chips or cracks before fitting.
  • Seat the ring concentrically on the chuck, confirming it is fully home and flat with no rocking or gap around the circumference.
  • Close the chamber, pump down, and verify base pressure and leak-up rate are within limits before returning to production.
  • Run the qualification or seasoning recipe and check edge process metrics, then reset the ring-life counter in the tool log.

Spare parts strategy for TEL etch consumables

Focus rings are high-turnover consumables, so securing a reliable supply at a controlled cost protects both budget and uptime. Sourcing ES7099-060 through ESCT Fab Support gives fabs a practical second-source option for this TEL ring:

  • A 2nd source NEW part built to match the form, fit and function of OEM P/N 2L10-251061-21.
  • A cost-managed alternative to single-source OEM consumable pricing, supporting lower cost of ownership per wafer.
  • Supply diversification that reduces exposure to a single procurement channel for a critical wear part.
  • A defined lead time of 4-5 weeks, allowing PM stock to be planned and replenished in advance.
  • Cross-referencing by both OEM and ESCT part numbers to simplify ordering and inventory control.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the 300 mm wafer at the edge of the electrostatic chuck and shapes the plasma sheath there, keeping ion trajectories vertical at the wafer periphery so that etch profile and critical dimensions stay uniform out to the outermost die.

Is this an original TEL OEM part?

No. ES7099-060 is supplied as a 2nd source NEW, OEM-compatible focus ring manufactured to match the form, fit and function of TEL OEM P/N 2L10-251061-21. It is not an original OEM part and is not sold as one.

How do I know when the ring needs replacing?

Focus rings are replaced on a height or wafer-count limit defined by your process, and at any sign of cracking, chipping or excessive surface roughening. Drift in edge critical dimensions or a rise in edge particle counts often signals that a ring is approaching end of life.

Will fitting a second-source ring change my process?

When the ring reproduces the original height, inner diameter, flatness and material, it should drop into an established process without re-tuning. As with any consumable change, qualify the first ring against your edge process metrics before committing it to volume production.

What is the lead time for ES7099-060?

The standard lead time is 4-5 weeks. Because focus rings are consumed on a regular PM cycle, we recommend holding buffer stock and reordering ahead of demand to avoid any gap in availability.

How should the ring be handled and stored?

Handle only with clean, powder-free gloves, touching the ring at its edges, and keep it in its original protective packaging until installation. Store in a clean, dry environment and inspect for chips or cracks immediately before fitting, since particulate damage directly affects wafer yield.

Summary

The TEL focus ring 360-T4 (320), OEM P/N 2L10-251061-21, is a sacrificial edge-confinement consumable that controls the plasma sheath and ion trajectories at the wafer periphery in Tokyo Electron 300 mm plasma etch chambers. Its height, inner diameter, flatness and material composition govern edge etch uniformity, particle performance and edge die yield, which is why faithful reproduction of the original specification matters so much. Supplied by ESCT Fab Support as ES7099-060, a 2nd source NEW ring matched to OEM form, fit and function with a 4-5 week lead time, it gives fabs a cost-managed, supply-secure way to keep this critical wear part on the shelf and their etch edge process inside its window.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251061-21. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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