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The TEL Focus Ring identified as LAB 360-T4-306 is a circumferential consumable that encircles the 300 mm wafer within a Tokyo Electron plasma etch process chamber. Seated on the electrostatic chuck (ESC) assembly so that its inner bore surrounds the wafer perimeter, the focus ring is one of the most heavily plasma-exposed parts in the etch reactor. Its job is deceptively simple to state but difficult to execute: it must extend the plasma sheath and the wafer-like electrical environment a few millimetres beyond the silicon edge so that the outermost dies see the same ion flux, sheath geometry and etch chemistry as the centre of the wafer.
In a TEL 300 mm etcher, the region immediately outside the wafer is electrically and chemically discontinuous. Without a focus ring, the RF sheath would bend sharply at the wafer edge, tilting ion trajectories, distorting feature profiles and accelerating etch rate roll-off across the last few millimetres of the wafer. The focus ring presents a sacrificial, process-matched surface that smooths this transition, holding the sheath flat across the edge exclusion zone and protecting the underlying chuck hardware from direct ion bombardment.
Because it is consumed by the very plasma it shapes, the focus ring is a scheduled-replacement item rather than a permanent component. Its erosion profile, dimensional tolerance and material grade directly determine edge die yield, making a verified-quality replacement such as ESCT P/N ES7099-046 a meaningful contributor to fab output and cost of ownership.
Within a Tokyo Electron etch chamber, the focus ring works in concert with the electrostatic chuck, edge ring, cover ring and upper electrode to manage the plasma at the wafer periphery. Its responsibilities span electrical, geometric and thermal domains simultaneously.
Focus rings of this class are manufactured from process-compatible materials chosen to match the wafer electrically and to survive aggressive fluorine- and oxygen-based plasmas. The dominant grades for TEL 300 mm focus rings are high-purity single-crystal or polycrystalline silicon and reaction-bonded or sintered silicon carbide, with quartz used where dielectric behaviour is required. The specific grade governs erosion rate, particle generation and contamination performance.
The ring is exposed continuously to energetic ions and reactive radicals. A correctly specified grade etches slowly and predictably, eroding in a uniform planar fashion rather than pitting or faceting. Silicon grades are favoured where the ring must be consumed sacrificially in step with the process, while silicon carbide offers longer life in high-power applications. Either way, controlled erosion is what keeps sheath geometry stable across the consumable’s service interval.
Edge uniformity depends on the ring sitting at a precise height and concentricity relative to the wafer plane. Inner and outer diameters, thickness, step features and flatness are held to tight tolerances, and the surface finish is controlled to limit particle shedding and to seat reliably on the chuck.
Because the focus ring controls the electrical and chemical environment of the wafer edge, its condition propagates directly into device results. As the ring erodes, the sheath geometry it supports gradually changes, and edge process behaviour drifts with it. A worn, out-of-tolerance or wrong-grade ring is a common root cause of edge yield loss.
The primary failure mode is expected: the ring is consumed by ion bombardment over its service life. As the top surface recedes, the sheath at the edge drops relative to the wafer, edge etch behaviour drifts, and the ring eventually crosses the thickness threshold beyond which edge uniformity can no longer be held. Erosion that is uneven or accelerated points to chamber, RF or seating problems.
Silicon and silicon carbide are brittle. Rapid temperature transients, mechanical mishandling during a parts swap, or local arcing can initiate cracks. A cracked ring is a particle source and a potential cause of wafer-edge defects, and in severe cases fragments can damage the chuck or contaminate the chamber.
Polymer and by-product deposition can build on the ring surface, and if conductive paths or sharp asperities form, localised arcing may occur. Arcing damages the ring, injects particles and disturbs the local RF environment. Material impurities or the wrong grade can also introduce metallic contamination at the sensitive wafer edge.
Focus ring replacement is a routine but precision-sensitive preventive-maintenance task. The ring sits in the plasma path and on the electrostatic chuck, so keep it clean and seat it correctly. The following sequence reflects general good practice; always defer to your site’s documented TEL maintenance procedure and safety requirements.
Focus rings are scheduled-wear items, which makes their availability and quality central to keeping TEL etch chambers in production. ESCT supplies the LAB 360-T4-306 focus ring as ESCT P/N ES7099-046, giving fabs a verified-quality alternative to single-source OEM procurement.
It surrounds the 300 mm wafer and extends the plasma sheath beyond the wafer edge, keeping ion trajectories vertical and etch behaviour uniform across the outermost dies. It also acts as a sacrificial surface that protects the electrostatic chuck from direct ion bombardment.
No. This focus ring is supplied as a second-source new, OEM-compatible part. It is verified to the form, fit and function of TEL OEM P/N 2010-251679-11 but is not an original Tokyo Electron OEM component and carries no OEM branding or warranty.
The interval depends on RF power, chemistry and run time, since the ring erodes with use. Most fabs replace it on a defined RF-hour or wafer-count schedule, or when edge-uniformity metrics begin to drift, rather than waiting for outright failure.
As the ring thins, the edge sheath drops and edge etch rate, profile angle and CD drift out of specification. This causes edge die yield loss, rising particle counts and, in extreme cases, exposure or damage to the underlying chuck.
Focus rings of this type are made from high-purity, process-compatible materials such as silicon or silicon carbide, selected to match the wafer electrically and to erode predictably under plasma. The grade is chosen to control contamination, particle generation and service life.
This focus ring is offered under ESCT P/N ES7099-046 with a typical lead time of 4–5 weeks. Quoting the ESCT part number alongside TEL OEM P/N 2010-251679-11 helps with correct identification against your chamber configuration.
The TEL Focus Ring LAB 360-T4-306 (OEM P/N 2010-251679-11), supplied by ESCT as part number ES7099-046, is a plasma-exposed edge consumable that governs sheath geometry, ion trajectory and etch uniformity at the perimeter of 300 mm wafers in Tokyo Electron plasma etch chambers. Manufactured from high-purity, erosion-resistant material and held to tight dimensional tolerances, it protects the electrostatic chuck while preserving edge die yield. As a scheduled-wear item, it benefits from a dependable second-source new supply, and the 4–5 week lead time supports proactive preventive-maintenance planning.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2010-251679-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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