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The focus ring identified by TEL part number 2L10-252745-11 is a precision annular consumable that sits in the wafer-edge region of a Tokyo Electron 300 mm plasma etch chamber. Its raw catalogue designation, “RING, FOCUS 298.1-T3.6(303.5)”, encodes the geometry that defines its job: an inner aperture sized to roughly 298.1 mm so that it surrounds the 300 mm wafer with a controlled gap, a ring thickness in the order of 3.6 mm, and an outer diameter of approximately 303.5 mm. Together these dimensions position the ring as a concentric collar that frames the wafer perimeter and conditions the plasma sheath where edge etch behaviour is hardest to control.
In an etch chamber the focus ring is one of the most heavily worked consumables in the process kit. It is clamped or seated directly around the electrostatic chuck, flush with or slightly proud of the wafer surface, and is continuously exposed to energetic ions, reactive radicals and the RF fields that drive the plasma. Because it occupies the boundary between the active wafer area and the grounded chamber hardware, it has a disproportionate influence on the uniformity of the last few millimetres of every wafer, an area that can represent a large fraction of usable die on a 300 mm substrate.
Supplied by ESCT Fab Support under part number ES7099-225, this focus ring is offered as a new, OEM-compatible replacement intended to restore original edge-etch performance when the installed ring has eroded to the end of its service life. It is dimensionally and functionally matched to the TEL component it replaces, so that engineers can return a chamber to its qualified process window without redesigning recipes or re-characterising the edge.
The focus ring is not a passive spacer; it is an active part of the plasma environment whose geometry and electrical state shape the sheath at the wafer edge. By extending the conductive or dielectric surface beyond the wafer, it pushes the plasma sheath boundary outward so that ions arrive at the wafer perimeter at the correct angle and energy rather than bending toward the substrate edge. Its principal functions include the following.
Focus rings for TEL etch chambers are manufactured from process-grade materials selected for plasma resistance and electrical behaviour, most commonly high-purity silicon, silicon carbide, or quartz, depending on the chemistry and the role the ring plays in the RF circuit. The material choice determines both how slowly the ring erodes and how it interacts with the plasma electrically, and both characteristics matter for this component.
Because the ring is bombarded continuously, its material must resist physical sputtering and chemical attack while keeping particle generation low. High-purity stock minimises metallic and mobile-ion contamination that could transfer to the wafer, while a controlled, predictable erosion rate allows the ring’s service life to be matched to a wafer-count or RF-hour interval.
The encoded dimensions, the inner aperture near 298.1 mm, the nominal 3.6 mm thickness and the 303.5 mm outer diameter, are tightly toleranced because the wafer-to-ring gap, the height of the ring relative to the wafer plane and the ring’s resistivity all feed directly into edge sheath shaping. Small deviations shift where the sheath bends and change the tilt and rate of the edge etch.
Few consumables have as direct a line to edge yield as the focus ring. As it erodes, its height drops and its profile changes, the sheath at the wafer edge moves, and the etch at the perimeter drifts. The practical consequences of a worn, mis-seated or wrong-specification ring are felt across the outer annulus of every wafer in the chamber.
The dominant wear mechanism is gradual erosion of the upper surface under continuous ion bombardment. As the ring thins below its nominal thickness, the sheath drops relative to the wafer plane, edge etch behaviour drifts, and the ring eventually reaches a height at which it can no longer hold the process within specification.
Thermal cycling and the mechanical stress of clamping can crack or chip a ring made from brittle silicon or quartz, especially once it has thinned. Chips and a roughened, micro-masked surface become particle sources that land on the wafer edge and depress yield long before the ring is fully consumed.
A ring that is not seated flat and concentric, from debris under the ring, a damaged seating surface or incorrect handling, produces an asymmetric gap and uneven thermal and electrical contact, giving azimuthally non-uniform etch. Surface contamination or polymer build-up between cleans can similarly degrade performance and increase defectivity.
Focus ring replacement is a routine preventive-maintenance task, but because the ring governs edge uniformity it must be handled and seated with care. The following sequence reflects good practice; always defer to the tool owner’s qualified PM procedure and safety requirements.
Because the focus ring is a scheduled-wear consumable, it is consumed on a predictable cadence and must be on the shelf when a PM falls due. Sourcing OEM-compatible rings through ESCT Fab Support gives planning and procurement teams a dependable second source that protects uptime without compromising the qualified edge process.
It surrounds the wafer and extends the plasma sheath beyond the wafer edge, keeping ion trajectories vertical across the outermost die. This preserves edge-to-centre etch uniformity and critical-dimension control while acting as a sacrificial surface that protects the electrostatic chuck.
No. This is a new, OEM-compatible focus ring supplied as a second source. It is verified to match the form, fit and function of TEL OEM P/N 2L10-252745-11, but it is not an original OEM-branded part and is not sold as one.
They describe the ring’s geometry: an inner aperture in the region of 298.1 mm that frames the 300 mm wafer, a nominal thickness of about 3.6 mm, and an outer diameter of approximately 303.5 mm. These dimensions set the wafer-to-ring gap and ring height that shape the edge plasma sheath.
Focus rings are replaced on a wafer-count or RF-hour interval, supported by inspection for height loss, cracking and chipping and by monitoring edge uniformity and particle data. Once erosion drives edge etch outside the process window, or particle counts rise, the ring should be changed.
Because it is matched to the original dimensions and material role, a correctly seated ring restores the qualified edge condition without recipe changes. As with any process-kit change, run your standard conditioning and edge-uniformity requalification before returning the chamber to production.
The typical lead time is 4–5 weeks. Because the focus ring is a predictable scheduled-wear consumable, we recommend holding buffer stock so that planned PM intervals are never delayed waiting on supply.
The focus ring under TEL P/N 2L10-252745-11 (ESCT P/N ES7099-225) is a precision edge-control consumable for Tokyo Electron 300 mm plasma etch chambers. With its 298.1 mm inner aperture, nominal 3.6 mm thickness and 303.5 mm outer diameter, it shapes the plasma sheath at the wafer perimeter to protect edge etch uniformity, critical-dimension control and edge die yield, while serving as a sacrificial barrier that shields the electrostatic chuck. As a heavily worked, scheduled-wear part it must be tracked, replaced and requalified on interval, and sourcing it as a new, OEM-compatible second source through ESCT Fab Support keeps that cadence dependable and cost-effective.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252745-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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