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The Upper Electrode Outer Ring is the annular consumable that forms the outer perimeter of the top-electrode (showerhead) assembly in a Tokyo Electron (TEL) 300 mm capacitively coupled plasma (CCP) etch chamber. Sitting concentrically around the inner upper-electrode plate, this ring closes the gap between the powered or grounded top electrode and the chamber liner, defining where the active discharge ends and the grounded structure begins. The “SST-2 V2E” designation marks it as a specific generation of the upper-electrode outer ring used in TEL’s SST-family etch chambers, where the upper-electrode stack is responsible for gas distribution, RF coupling and plasma confinement above the wafer.
Although it carries no moving parts and draws no power of its own, the outer ring is a precision plasma-facing component. Its inner diameter, thickness and surface condition set the boundary of the electrode area and shape the fringing field at the edge of the discharge. Because it is mounted in the lid stack directly above the wafer plane, any erosion, contamination or dimensional drift on this ring is transferred straight into the etch result at the wafer edge, the region where process windows are tightest and where most yield loss in advanced etch occurs.
ESCT Fab Support supplies this part under ESCT P/N ES7099-151 as a 2nd-source, NEW component manufactured to match the form, fit and function of TEL OEM P/N 2L10-356318-11, with a typical lead time of 4-5 weeks. It is intended as a managed-cost alternative to the original consumable for fabs maintaining TEL etch fleets.
In a TEL CCP etch chamber the upper-electrode assembly is built as concentric zones, and the outer ring is the part that terminates the active electrode area and transitions it to the surrounding grounded hardware. Its job is geometric and electrical rather than mechanical, and it performs several functions simultaneously:
Upper-electrode outer rings of this type are produced from plasma-grade materials selected for the aggressive fluorocarbon, oxygen and inert-gas chemistries used in dielectric and conductor etch. Depending on the recipe set, these rings are typically high-purity silicon, quartz or a high-purity ceramic such as alumina, chosen so that any erosion products are process-compatible and do not introduce metallic or mobile-ion contamination. The material is held to tight purity and density specifications so the ring erodes slowly and predictably rather than spalling or generating particles.
Because the ring sets an electrical boundary, its inner diameter, flatness, parallelism and surface finish are as important as its chemistry. The ring is machined to tight tolerances so that, once installed, the gap between top electrode and wafer and the radial position of the discharge edge match the values the process was qualified against. Surface finish is controlled to limit nucleation sites for polymer deposits and to keep particle shedding low.
Because the outer ring defines the edge of the discharge directly above the wafer, its condition propagates straight into edge-of-wafer results. A ring that has worn, shifted or accumulated deposits changes the fringing field and therefore the etch behaviour in the outermost die, exactly where every additional good die has the highest marginal value. Typical consequences of running a degraded ring include:
Continuous ion bombardment and chemical attack gradually thin the ring and round its inner edge. As the geometry changes, the field at the discharge boundary shifts and edge etch performance drifts. This is the expected end-of-life mechanism and is the primary reason the ring is treated as a scheduled consumable rather than a permanent part.
Fluorocarbon and by-product films build up on the ring between cleans. When these deposits grow too thick or are thermally cycled, they crack and flake, releasing particles onto the wafer and altering local surface chemistry. Rings with damaged or roughened surfaces accumulate deposits faster, accelerating the cycle.
As a brittle plasma-facing component, the ring can chip or crack from thermal shock, mishandling during a wet clean, or localised arcing where confinement has broken down. Cracks change the RF boundary, create particle sources and can propagate, so a chipped or arc-marked ring should be retired rather than returned to service.
Replacing the upper-electrode outer ring is a lid-open preventive-maintenance task that should follow the TEL service procedure for the specific chamber, performed by trained personnel with proper grounding and contamination control. A representative sequence is:
Upper-electrode rings are scheduled consumables, so fabs benefit from holding qualified replacements rather than waiting on single-source supply. Sourcing ES7099-151 through ESCT Fab Support gives engineering and procurement teams a practical second source for this TEL consumable:
It forms the outer perimeter of the top-electrode assembly, terminating the active electrode area and shaping the fringing field at the edge of the plasma. In doing so it helps confine the discharge above the wafer and governs etch behaviour at the wafer edge.
No. This is supplied as a NEW, 2nd-source component that is manufactured to be compatible with TEL OEM P/N 2L10-356318-11. It is not an original OEM part and is offered as an OEM-compatible alternative verified to form, fit and function.
Replacement is driven by accumulated plasma hours, recipe aggressiveness and observed edge performance rather than a fixed calendar interval. Most fabs replace it on a scheduled PM tied to chamber qualification data, retiring it once erosion, deposits or edge drift approach process limits.
Rings of this type are made from plasma-grade materials such as high-purity silicon, quartz or high-purity ceramic, selected so erosion products are process-compatible and contamination is minimised. The exact material is matched to the qualified consumable for the chamber.
Yes. Because the ring sets the discharge boundary directly above the wafer, wear, deposits or cracking shift edge etch rate and uniformity and can raise particle counts. This shows up as edge-of-wafer CD drift and defectivity, which is why the ring is replaced before it reaches end of life.
Typical lead time is 4-5 weeks. Orders can be placed against ESCT P/N ES7099-151, cross-referenced to OEM P/N 2L10-356318-11, and ESCT Fab Support can advise on quantities to support planned maintenance and buffer stock.
The Upper Electrode Outer Ring SST-2 V2E (OEM P/N 2L10-356318-11, ESCT P/N ES7099-151) is a precision plasma-facing consumable that defines the outer boundary of the top electrode in TEL 300 mm etch chambers. By fixing the discharge edge, supporting plasma confinement and providing a sacrificial high-purity surface, it directly influences edge-of-wafer uniformity, particle performance and chamber matching. Treating it as a scheduled consumable, holding a qualified second source and replacing it before erosion or deposits degrade the edge field keeps TEL etch tools stable and protects yield. ESCT Fab Support offers ES7099-151 as a NEW, second-source replacement with a 4-5 week lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-356318-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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