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The Upper Electrode Cathode designated LD-777 is the powered or grounded top electrode that sits directly above the wafer in a Tokyo Electron (TEL) 300 mm plasma etch chamber. In a capacitively coupled etch reactor, this component forms the upper boundary of the discharge gap, faces the wafer across the plasma sheath and, in most TEL configurations, doubles as the gas-distribution showerhead through which process gases are introduced uniformly across the wafer surface. The “[SCCM]” tag in the part name reflects this dual role: the electrode meters and disperses metered gas flow (measured in standard cubic centimetres per minute) while simultaneously coupling RF energy into the plasma.
Because it is in direct line of sight with the plasma and is bombarded by energetic ions throughout every etch cycle, the upper electrode is a primary consumable. It is typically machined from high-purity silicon (or, in some TEL families, from silicon carbide or graphite) so that any material sputtered from its surface is chemically benign to the silicon wafer below. The electrode’s flatness, gas-hole geometry, surface finish and bulk resistivity all directly shape the electric field, the gas residence profile and the etch-rate uniformity seen at the wafer edge and centre.
As a worn or contaminated upper electrode is one of the most common causes of drifting etch rate, rising particle counts and centre-to-edge non-uniformity, keeping a qualified replacement on hand is central to sustaining chamber availability and wafer yield. ESCT P/N ES7099-145 is offered as a form-fit-function equivalent to TEL OEM P/N DB-1810-121988-11-H.
The upper electrode is far more than a passive lid. In a TEL capacitively coupled etch chamber it performs several tightly coupled functions simultaneously, each of which influences the plasma chemistry and the resulting feature profile on the wafer:
Upper electrodes of this class are manufactured from high-purity, controlled-resistivity silicon or, depending on the process recipe, silicon carbide. The bulk resistivity is specified within a tight band because it governs how RF current passes through the electrode and into the plasma. Trace metallic impurities are held to extremely low levels so that ion bombardment cannot liberate contaminants onto the wafer.
The drilled gas-hole array is the feature that converts a single metered SCCM feed into an even gas curtain. Hole diameter, pitch and depth are engineered to balance conductance against plasma penetration, so the electrode meters flow without allowing the discharge to ignite inside the holes. Any change to this geometry, whether from erosion or clogging, shifts the local gas residence time and degrades centre-to-edge uniformity.
Because the upper electrode defines both the gas delivery and the upper RF boundary, its condition feeds directly into device yield. A degraded electrode rarely fails outright; instead it drifts, quietly widening process distributions until lots fall out of specification. The downstream consequences include:
Continuous ion bombardment slowly sputters material from the plasma-facing surface, thinning the electrode and roughening its texture. As the surface recedes the electrode gap widens and the sheath field changes, shifting etch rate and uniformity. Once thinning approaches the manufacturer’s wear limit the electrode must be replaced to keep the process in control.
The gas holes are erosion hot spots. Plasma can widen the hole entrances or, conversely, polymer and etch by-products can build up and partially block them. Either change disturbs the uniform gas curtain, creating local hot or cold zones on the wafer and degrading centre-to-edge results well before any visible failure.
Thermal cycling and mechanical stress can initiate micro-cracks in the silicon, which may propagate into full fractures or generate particles. Localised arcing at the electrode surface or seal interface burns pits into the material, while accumulated deposits can flake away as defect-causing particulate. Any of these conditions warrants prompt inspection and replacement.
Replacing the upper electrode is a clean-room, high-care procedure. The component is brittle, contamination-sensitive and part of the RF path, so handling discipline matters as much as torque values. The following sequence outlines good practice; always follow the TEL maintenance manual and your site procedures for the specific chamber.
Upper electrodes are scheduled consumables, so a reliable second-source supply protects both cost and uptime. ESCT supplies ES7099-145 as a qualified alternative to the TEL original, with the support fabs need to keep chambers running:
It is the top electrode in a TEL capacitively coupled etch chamber. It sets the upper RF boundary above the wafer, couples power into the plasma and acts as the gas-distribution showerhead, metering process gas (in SCCM) through a precision hole array to give uniform etch results across the 300 mm wafer.
No. ES7099-145 is supplied as a second-source NEW, OEM-compatible part. It is not an original Tokyo Electron component and is not sold as such. It is manufactured and verified to match the form, fit and function of TEL OEM P/N DB-1810-121988-11-H so it can be used as a direct replacement.
Upper electrodes of this type are produced from high-purity, controlled-resistivity silicon or silicon carbide, chosen so that any material sputtered under ion bombardment is compatible with silicon wafer processing and does not introduce metallic contamination.
Watch for drifting etch rate, worsening centre-to-edge uniformity, rising particle counts or unstable RF impedance and reflected power. Physically, surface thinning beyond the wear limit, enlarged or clogged gas holes, arcing pits or cracks all indicate the electrode has reached end of life.
The typical lead time is 4 to 5 weeks. Because the upper electrode is a scheduled consumable, we recommend ordering ahead of your planned replacement cycle so a qualified spare is on the shelf when the chamber needs it.
This electrode is matched to TEL OEM P/N DB-1810-121988-11-H. As TEL etch platforms use several electrode variants, we recommend confirming your chamber configuration and existing part number with our technical team before ordering so we can verify compatibility.
The LD-777 Upper Electrode Cathode is a critical plasma-facing consumable in TEL 300 mm etch chambers, simultaneously forming the upper RF electrode, the gas-distribution showerhead and part of the plasma confinement and return path. Its purity, resistivity, flatness and gas-hole geometry govern etch uniformity, selectivity and particle performance, and its gradual erosion is a leading cause of process drift. ESCT P/N ES7099-145 provides a second-source NEW, form-fit-function equivalent to TEL OEM P/N DB-1810-121988-11-H, helping fabs maintain chamber availability and yield with a dependable, cost-effective supply and a typical 4 to 5 week lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number DB-1810-121988-11-H. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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