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The part designated RING, F-8S0-SI-260-3.4A is a silicon focus ring used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. The internal nomenclature decodes neatly to its function: the leading “F” identifies it as a focus (edge) ring, “SI” confirms the bulk material is high-purity silicon, and “260” indicates the nominal dimensional class of the annular profile, with “3.4A” denoting the specific thickness and revision variant qualified for the host chamber. It is a circular, plate-like consumable that encircles the 300 mm wafer at the very edge of the electrostatic chuck, sitting flush against the process kit so that the plasma sees a continuous silicon surface from the wafer edge outward.
In a TEL capacitively coupled etch chamber, the region within a few millimetres of the wafer edge is where uniformity is hardest to control. The wafer edge is a natural discontinuity in the RF field, the gas flow and the temperature profile, and without a sacrificial ring of the same material the plasma sheath would terminate abruptly, distorting ion trajectories and starving or over-etching the outermost dies. The silicon focus ring extends the wafer plane outward, presenting matched electrical and chemical properties to the plasma so that the sheath bends predictably over the last few millimetres of usable silicon.
Because it is directly in the path of ion bombardment and reactive fluorine or chlorine chemistries, the focus ring is a defined-life consumable. It erodes by design, protecting the more expensive chuck and electrode assemblies beneath it, and it is one of the most frequently exchanged items in any TEL etch preventive maintenance schedule. Its condition has an outsized effect on edge yield, which is why fabs hold it as a controlled spare.
The silicon focus ring performs several interlocking functions simultaneously, all of which depend on its material being electrically and chemically near-identical to the wafer it surrounds:
The ring is machined from high-purity silicon, typically with tightly controlled resistivity and very low metallic contamination, so that as it erodes it cannot introduce yield-killing species onto the wafer. Matching the ring material to the wafer also matches its etch-by-product chemistry, keeping the gas-phase composition near the edge consistent with the wafer centre.
Edge uniformity is exquisitely sensitive to the ring’s thickness, inner-diameter step and flatness, so the “260” profile class and “3.4A” thickness variant must be held to the qualified geometry. A focus ring that is even slightly out of specification shifts the sheath and degrades the edge-exclusion zone.
Because the focus ring governs the electrical and chemical environment at the wafer edge, its state translates directly into measurable device and tool metrics. A worn, cracked or mismatched ring produces effects that propagate from the edge inward:
The dominant wear mechanism is gradual erosion of the silicon surface under continuous ion bombardment and chemical attack. As the ring thins and its inner edge recedes, the wafer-to-ring step changes, the sheath geometry drifts, and edge uniformity degrades until the ring reaches its end-of-life thickness and must be replaced.
Silicon is brittle, so thermal cycling, mechanical handling and uneven seating can initiate micro-cracks that propagate into full fractures. A cracked ring is both a particle source and an electrical discontinuity, and any visible chip, hairline crack or spalling is grounds for immediate removal from service.
Polymer deposition, by-product build-up and localised arcing can roughen or contaminate the ring surface, changing its erosion rate and creating localised hot spots. This produces asymmetric edge performance and can seed defects long before the ring is dimensionally worn out.
Focus-ring replacement is a routine but exacting preventive-maintenance task. Always follow the TEL chamber service procedure and your site’s safety and contamination-control protocols; the steps below summarise good practice:
Focus rings are high-turnover consumables, so availability and consistency matter as much as the part itself. Sourcing this ring through ESCT Fab Support gives fabs a practical alternative to single-channel OEM supply:
It is a silicon focus ring that encircles the 300 mm wafer at the edge of the chuck. It extends the wafer plane outward, shapes and confines the plasma sheath at the wafer edge, and provides a matched silicon sacrificial surface so the outermost dies etch uniformly and cleanly.
No. This is not an original OEM part. It is supplied as a 2nd-source new, OEM-compatible focus ring cross-referenced to TEL OEM P/N 1D10-350647-11 and verified to match the original in form, fit and function.
It is a defined-life consumable, so replacement interval depends on the chemistry, power and run-time of your process. Most fabs track it by RF hours or wafer count and replace it on a fixed PM cycle, or sooner if edge uniformity or particle data drift.
Watch for rising edge non-uniformity, tilted profiles on boundary dies, increasing particle counts, or any visible thinning, cracking or surface roughening on inspection. Reaching the end-of-life thickness or any crack should trigger immediate replacement.
Matching the ring to the wafer keeps the electrical coupling, etch chemistry and erosion by-products consistent across the wafer edge. High purity means that as the ring is consumed it does not release metallic or mobile-ion contamination that would degrade device yield.
The typical lead time is 4-5 weeks. Order using ESCT P/N ES7099-174, referencing TEL OEM P/N 1D10-350647-11, and our team can confirm compatibility with your specific TEL etch chamber configuration before the order is placed.
The silicon focus ring RING, F-8S0-SI-260-3.4A (TEL OEM P/N 1D10-350647-11, ESCT P/N ES7099-174) is a critical edge-confinement consumable in TEL 300 mm plasma etch chambers. By extending the wafer plane, shaping the plasma sheath and providing a matched silicon sacrificial surface, it protects edge etch uniformity, particle performance and the life of the underlying chuck. As a high-turnover, defined-life part, it is best held as a controlled spare; ESCT Fab Support offers it as a 2nd-source new component with reliable availability and a 4-5 week lead time to keep your TEL etch tools running to specification.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350647-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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